Vishay Semiconductors - MOSFETs
2,042 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIA421DJ-T1-GE3 TTI: SIA421DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 12 A | 35 mOhms | - 10 V, 10 V | 1.5 V | 19 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA421DJ-GE3 | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | - 20 V, 20 V | 2 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | - 20 V, 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBE30PBF-BE3 | |||||
Mfr: SI7898DP-T1-GE3 TTI: SI7898DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 3 A | 85 mOhms | - 20 V, 20 V | 2 V | 17 nC | - 55 C | + 150 C | 1.9 W | Enhancement | TrenchFET | Reel | SI7898DP-GE3 | |||
Mfr: IRF9620PBF TTI: IRF9620PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 200V 3.5A P-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 3.5 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 22 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | IRF9620PBF-BE3 | ||||
Mfr: IRLIZ14GPBF TTI: IRLIZ14GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 N-CH 60V 8A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 8 A | 200 mOhms | - 10 V, 10 V | 1 V | 8.4 nC | - 55 C | + 175 C | 25 W | Enhancement | Tube | |||||
Mfr: IRFR9120TRLPBF TTI: IRFR9120TRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 100V 5.6A P-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR9120TRLPBF-BE3 | ||||
Mfr: SI2365EDS-T1-GE3 TTI: SI2365EDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 5.9 A | 26.5 mOhms | - 8 V, 8 V | 1 V | 13.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2365EDS-T1-BE3 SI4816DY-T1-E3-S | |||
Mfr: SIHG47N60AE-GE3 TTI: SIHG47N60AE-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 43 A | 56 mOhms | - 30 V, 30 V | 4 V | 121 nC | - 55 C | + 150 C | 313 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 40 V | 9.2 A | 20 mOhms | - 20 V, 20 V | 1.2 V | 10 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4288DY-GE3 | ||||
Mfr: SISF04DN-T1-GE3 TTI: SISF04DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 30V(S1-S2) PowerPAK 1212-8F | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 30 V | 108 A | 4 mOhms | - 12 V, 16 V | 2.3 V | 40 nC | - 55 C | + 150 C | 69.4 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFU9110PBF TTI: IRFU9110PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 100V 3.1 Amp | 0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 100 V | 3.1 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 8.7 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: SI4477DY-T1-GE3 TTI: SI4477DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 20 V | 26.6 A | 6.2 mOhms | - 8 V, 8 V | 600 mV | 125 nC | - 55 C | + 150 C | 6.6 W | Enhancement | TrenchFET | Reel | SI4477DY-GE3 | |||
Mfr: SISS05DN-T1-GE3 TTI: SISS05DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs PPAK1212 P-CH 30V 29.4A | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 108 A | 5.8 mOhms | - 20 V, 16 V | 2.2 V | 76 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 6.8 A, 11.4 A | 11.5 mOhms, 18.5 mOhms | - 20 V, 20 V | 1 V | 7.8 nC, 11.6 nC | - 55 C | + 150 C | 1.4 W, 2.4 W | Enhancement | TrenchFET | Reel | SI4816DY-T1-E3-S | ||||
Mfr: IRF540SPBF TTI: IRF540SPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 100V 28A N-CH MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | - 20 V, 20 V | 2 V | 72 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 3.7 A | 85 mOhms | - 20 V, 20 V | 2 V | 21 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI4848DY-E3 | ||||
Mfr: IRFIB6N60APBF TTI: IRFIB6N60APBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 600V 5.5A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 5.5 A | 750 mOhms | - 30 V, 30 V | 2 V | 49 nC | - 55 C | + 150 C | 60 W | Enhancement | Tube | |||||
Mfr: SI9926CDY-T1-GE3 TTI: SI9926CDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 12V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 20 V | 8 A | 18 mOhms | - 12 V, 12 V | 600 mV | 22 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI9926CDY-GE3 | |||
Mfr: SI5471DC-T1-GE3 TTI: SI5471DC-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs 1206-8 ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 1 Channel | 20 V | 6 A | 16.7 mOhms | - 12 V, 12 V | 1.1 V | 96 nC | - 55 C | + 150 C | 6.3 W | Enhancement | TrenchFET | Reel | SI5471DC-GE3 | |||
Mfr: SISS65DN-T1-GE3 TTI: SISS65DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds -/+20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S-8 | P-Channel | 1 Channel | 30 V | 94 A | 4.6 mOhms | - 20 V, 20 V | 2.3 V | 138 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIS862DN-T1-GE3 TTI: SIS862DN-T1-GE3 Vishay Semiconductors MOSFETs 60V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 60 V | 40 A | 7 mOhms | - 20 V, 20 V | 1.5 V | 32 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | - 20 V, 20 V | 3 V | 2 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI2303CDS-T1-BE3 SI2303BDS-T1-E3-S | ||||
Mfr: IRF840ALPBF TTI: IRF840ALPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO262 500V 8A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 2 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: IRLZ44STRRPBF TTI: IRLZ44STRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 N-CH 60V 50A | 0In Stock | Si | Reel |
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