Vishay Semiconductors - MOSFETs
2,042 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFI9520GPBF TTI: IRFI9520GPBF Vishay Semiconductors Availability: 0In Stock1,000 On Order Expected 03-Aug-26 MOSFETs TO220 100V 5.2A P-CH MOSFET | 0In Stock1,000 On Order Expected 03-Aug-26 | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 5.2 A | 600 mOhms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 175 C | 37 W | Enhancement | Tube | |||||
Mfr: SQA411CEJW-T1-GE3 TTI: SQA411CEJW-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs PPAKSC70 P-CH 60V 6.46A | 0In Stock | Si | SMD/SMT | PowerPAK SC-70W-6 | P-Channel | 1 Channel | 60 V | 6.46 A | 155 mOhms | - 20 V, 20 V | 2.5 V | 10.2 nC | - 55 C | + 175 C | 13.6 W | Enhancement | ||||||
Mfr: SIR422DP-T1-GE3 TTI: SIR422DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 20.5 A | 6.6 mOhms | - 20 V, 20 V | 1.2 V | 48 nC | - 55 C | + 150 C | 34.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR422DP-GE3 | |||
Mfr: SI4850EY-T1-GE3 TTI: SI4850EY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 8.5 A | 22 mOhms | - 20 V, 20 V | 1 V | 18 nC | - 55 C | + 175 C | 3.3 W | Enhancement | TrenchFET | Reel | SI4850EY-GE3 | |||
Mfr: SIA519EDJ-T1-GE3 TTI: SIA519EDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N- & P- Channel 20V MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK-SC70-6 | N-Channel, P-Channel | 2 Channel | 20 V | 4.5 A | 40 mOhms, 90 mOhms | - 8 V, 8 V | 500 mV, 600 mV | 3.7 nC, 5.3 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA519EDJ-GE3 | |||
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 12 V | 4 A | 34 mOhms | - 10 V, 10 V | 1 V | 36 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1401EDH-T1-BE3 SI1401EDH-GE3 | ||||
Mfr: SIR622DP-T1-GE3 TTI: SIR622DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 51.6 A | 17.7 mOhms | - 20 V, 20 V | 2.5 V | 27 nC | - 55 C | + 150 C | 104 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: IRFR120TRPBF TTI: IRFR120TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 100V 7.7A N-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7.7 A | 270 mOhms | - 20 V, 20 V | 2 V | 16 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR120TRPBF-BE3 | ||||
Mfr: SIA910EDJ-T1-GE3 TTI: SIA910EDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 12 V | 4.5 A | 28 mOhms | - 8 V, 8 V | 400 mV | 16 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA910EDJ-GE3 | |||
Mfr: SI5457DC-T1-GE3 TTI: SI5457DC-T1-GE3 Vishay Semiconductors MOSFETs -20V Vds 12V Vgs 1206-8 ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 1 Channel | 20 V | 6 A | 56 mOhms | - 12 V, 12 V | 1.4 V | 38 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI5457DC-GE3 | |||
Mfr: SI5513CDC-T1-E3 TTI: SI5513CDC-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 12V Vgs 1206-8 ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel, P-Channel | 2 Channel | 20 V | 3.7 A, 4 A | 55 mOhms, 150 mOhms | - 12 V, 12 V | 600 mV | 4.2 nC, 5.6 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5513CDC-E3 | |||
Mfr: IRLZ14SPBF TTI: IRLZ14SPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 N-CH 60V 10A | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 10 A | 200 mOhms | - 10 V, 10 V | 1 V | 8.4 nC | - 55 C | + 175 C | 3.7 W | Enhancement | Tube | |||||
Mfr: SIA921EDJ-T1-GE3 TTI: SIA921EDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 20 V | 4.5 A | 48 mOhms, 48 mOhms | - 12 V, 12 V | 1.4 V | 23 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA921EDJ-GE3 | |||
Mfr: IRFZ14SPBF TTI: IRFZ14SPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 60V 10 Amp 200mohm @ 10V | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 10 A | 200 mOhms | - 20 V, 20 V | 2 V | 11 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | |||||
Mfr: SISA24DN-T1-GE3 TTI: SISA24DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 60A Id 17.2nC Qg Typ. | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 25 V | 60 A | 1.15 mOhms | - 16 V, 20 V | 1 V | 55 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRF9Z24PBF TTI: IRF9Z24PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 P-CH 60V 11A | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 11 A | 280 mOhms | - 20 V, 20 V | 4 V | 19 nC | - 55 C | + 175 C | 2.5 W | Enhancement | Tube | IRF9Z24PBF-BE3 | ||||
Mfr: IRFR9210TRPBF TTI: IRFR9210TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 200V 1.9A P-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 200 V | 1.9 A | 3 Ohms | - 20 V, 20 V | 4 V | 8.9 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | |||||
Mfr: SI2307CDS-T1-GE3 TTI: SI2307CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 3.5 A | 88 mOhms | - 20 V, 20 V | 3 V | 4.1 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2307CDS-T1-BE3 SI2307CDS-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 25.7 A | 5 mOhms | - 20 V, 20 V | 2.5 V | 203 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | |||||
Mfr: IRF9510STRLPBF TTI: IRF9510STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 100V 4.0 Amp | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 4 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 8.7 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel | |||||
Mfr: SUP90P06-09L-E3 TTI: SUP90P06-09L-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V 90A 250W 9.3mohm @ 10V | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 90 A | 7.4 mOhms | - 20 V, 20 V | 3 V | 240 nC | - 55 C | + 175 C | 250 W | Enhancement | TrenchFET | Tube | ||||
Mfr: IRL640STRLPBF TTI: IRL640STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 200V 17 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 17 A | 180 mOhms | - 10 V, 10 V | 1 V | 66 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: SI7858BDP-T1-GE3 TTI: SI7858BDP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V Vds 8V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 12 V | 40 A | 2.5 mOhms | - 8 V, 8 V | 1 V | 56 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | IRFBG20PBF-BE3 | |||||
Mfr: IRF640STRLPBF TTI: IRF640STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 200V 18A N-CH MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | - 20 V, 20 V | 2 V | 70 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel |
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