Vishay Semiconductors - MOSFETs
2,042 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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50In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 3.3 A | 1.8 Ohms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF720PBF-BE3 | |||||
Mfr: SIHB11N80E-GE3 TTI: SIHB11N80E-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs 800V Vds 30V Vgs D2PAK (TO-263) | 5,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 12 A | 440 mOhms | - 30 V, 30 V | 2 V | 88 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | |||||
Mfr: SIHA125N60EF-GE3 TTI: SIHA125N60EF-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs TO220 600V 11A N-CH MOSFET | 2,000In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 11 A | 125 mOhms | - 30 V, 30 V | 5 V | 31 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | ||||||
Mfr: SQ4401EY-T1-GE3 TTI: SQ4401EY-T1-GE3 Vishay Semiconductors Availability: 25,000In StockMOSFETs RECOMMENDED ALT SQ44 | 25,000In Stock | Si | SMD/SMT | SOIC-8 | AEC-Q100 | TrenchFET | Reel | SQ4401EY-GE3 | ||||||||||||||
Mfr: SQ3460EV-T1-GE3 TTI: SQ3460EV-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs RECOMMENDED ALT SQ34 | 9,000In Stock | Si | AEC-Q100 | TrenchFET | Reel | SQ3460EV-GE3 | ||||||||||||||||
Mfr: SIHP180N60E-GE3 TTI: SIHP180N60E-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 19 A | 180 mOhms | - 30 V, 30 V | 3 V | 22 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
Mfr: SIHA120N60E-GE3 TTI: SIHA120N60E-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs TO-220 | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | - 30 V, 30 V | 3 V | 45 nC | - 55 C | + 150 C | 34 W | Enhancement | Reel | |||||
Mfr: SIR104ADP-T1-RE3 TTI: SIR104ADP-T1-RE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs N-CHANNEL 100V PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | - 20 V, 20 V | 4 V | 46.1 nC | - 55 C | + 150 C | 100 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHD9N60E-GE3 TTI: SIHD9N60E-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 600V Vds 30V Vgs DPAK (TO-252) | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 9 A | 320 mOhms | - 30 V, 30 V | 4.5 V | 26 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | |||||
Mfr: IRF840LCSPBF TTI: IRF840LCSPBF Vishay Semiconductors Availability: 200In StockMOSFETs TO263 500V 8A N-CH MOSFET | 200In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 2 V | 39 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SIHP125N60EF-GE3 TTI: SIHP125N60EF-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs TO220 600V 25A N-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 109 mOhms | - 30 V, 30 V | 5 V | 31 nC | - 55 C | + 150 C | 179 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUD19N20-90-T4-E3 TTI: SUD19N20-90-T4-E3 Vishay Semiconductors Availability: 2,500In StockMOSFETs N-CH 200V 19A | 2,500In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 19 A | 90 mOhms | - 20 V, 20 V | 2 V | 51 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD19N20-90-T4 | |||
Mfr: IRFS11N50ATRLP TTI: IRFS11N50ATRLP Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 500V 11 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | Reel | |||||||||||||||||
Mfr: SI2304BDS-T1-E3 TTI: SI2304BDS-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V 3.2A 0.07Ohm | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 2.6 A | 70 mOhms | - 20 V, 20 V | 1.5 V | 2.6 nC | - 55 C | + 150 C | 750 mW | Enhancement | TrenchFET | Reel | SI2304BDS-T1-BE3 SI2304BDS-E3 | |||
Mfr: SI7423DN-T1-E3 TTI: SI7423DN-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V 11.7A 3.8W 18mohm @ 10V | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 11.7 A | 30 mOhms | - 20 V, 20 V | 3 V | 56 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7423DN-E3 | |||
Mfr: SQS164ELNW-T1-GE3 TTI: SQS164ELNW-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs PPAK1218 N-CH 60V 82A | 6,000In Stock | Si | SMD/SMT | PowerPAK 1212-8SLW | N-Channel | 1 Channel | 60 V | 82 A | 7.4 mOhms | - 20 V, 20 V | 2.5 V | 27 nC | - 55 C | + 175 C | 104 W | Enhancement | ||||||
Mfr: SQ2319ADS-T1-GE3 TTI: SQ2319ADS-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs SOT23 P CHAN 40V | 3,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SQJ154EP-T1-GE3 TTI: SQJ154EP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs PPAKSO8 N-CH 40V 243A | 3,000In Stock | Si | SMD/SMT | PowerPAK SO-8L | N-Channel | 1 Channel | 40 V | 243 A | 2.5 mOhms | - 20 V, 20 V | 3.5 V | 43 nC | - 55 C | + 175 C | 214 W | Enhancement | ||||||
Mfr: SQS142ENW-T1-GE3 TTI: SQS142ENW-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs PPAK1218 N-CH 40V 110A | 3,000In Stock | Si | SMD/SMT | PowerPAK 1212-8SLW | N-Channel | 1 Channel | 40 V | 110 A | 4.5 mOhms | - 20 V, 20 V | 3.3 V | 23 nC | - 55 C | + 175 C | 113 W | Enhancement | ||||||
Mfr: SI2319CDS-T1-GE3 TTI: SI2319CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -40V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 40 V | 4.4 A | 77 mOhms | - 20 V, 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2319CDS-T1-BE3 SI2319CDS-GE3 | |||
0In Stock4,500 On Order Expected 10-Jun-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | - 20 V, 20 V | 4 V | 70 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF640PBF-BE3 | |||||
Mfr: IRLL110TRPBF TTI: IRLL110TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 100V 1.5 Amp | 0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | - 10 V, 10 V | 2 V | 6.1 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRLL110TRPBF-BE3 | ||||
0In Stock10,550 On Order Expected | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 20 V, 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840PBF-BE3 SIHF840-E3 | |||||
Mfr: IRFP264PBF TTI: IRFP264PBF Vishay Semiconductors Availability: 0In Stock9,000 On Order Expected MOSFETs TO247 250V 38A N-CH MOSFET | 0In Stock9,000 On Order Expected | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 38 A | 75 mOhms | - 20 V, 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: 2N7002K-T1-GE3 TTI: 2N7002K-T1-GE3 Vishay Semiconductors Availability: 0In Stock126,000 On Order Expected MOSFETs 60V Vds 20V Vgs SOT-23 | 0In Stock126,000 On Order Expected | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 300 mA | 2 Ohms | - 20 V, 20 V | 1 V | 400 pC | - 55 C | + 150 C | 350 mW | Enhancement | Reel | 2N7002K-GE3 |
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