Vishay Semiconductors - MOSFETs
2,042 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIAA40DJ-T1-GE3 TTI: SIAA40DJ-T1-GE3 Vishay Semiconductors Availability: 24,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SC-70 | 24,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 40 V | 30 A | 12.5 mOhms | - 16 V, 20 V | 1 V | 24 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2329DS-T1-GE3 TTI: SI2329DS-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -8V Vds 5V Vgs SOT-23 | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 8 V | 6 A | 30 mOhms | - 5 V, 5 V | 350 mV | 19.3 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHK045N60EF-T1GE3 TTI: SIHK045N60EF-T1GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs TOLL 600V 47A E SERIES | 2,000In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 80 V | 66 A | 12.5 mOhms | - 20 V, 20 V | 2.5 V | 45 nC | - 55 C | + 175 C | 135 W | Enhancement | Reel | |||||
Mfr: SIHG065N60E-GE3 TTI: SIHG065N60E-GE3 Vishay Semiconductors Availability: 44,400In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 44,400In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 40 A | 65 mOhms | - 30 V, 30 V | 5 V | 74 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SI4464DY-T1-GE3 TTI: SI4464DY-T1-GE3 Vishay Semiconductors Availability: 27,500In StockMOSFETs 200V Vds 20V Vgs SO-8 | 27,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 200 V | 2.2 A | 240 mOhms | - 20 V, 20 V | 2 V | 18 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI4464DY-GE3 | |||
Mfr: IRFI740GPBF TTI: IRFI740GPBF Vishay Semiconductors Availability: 600In StockMOSFETs TO220 400V 5.4A N-CH MOSFET | 600In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.4 A | 550 mOhms | - 20 V, 20 V | 2 V | 66 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: SIR668DP-T1-RE3 TTI: SIR668DP-T1-RE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 95 A | 4 mOhms | - 20 V, 20 V | 2 V | 108 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI3477DV-T1-GE3 TTI: SI3477DV-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -12V Vds 10V Vgs TSOP-6 | 3,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 12 V | 8 A | 17.5 mOhms | - 10 V, 10 V | 1 V | 90 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | SI3477DV-GE3 | |||
Mfr: SIHD240N60E-GE3 TTI: SIHD240N60E-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 600V Vds; +/-30V Vgs DPAK (TO-252) | 6,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 12 A | 240 mOhms | - 30 V, 30 V | 3 V | 23 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | |||||
Mfr: IRFPG40PBF TTI: IRFPG40PBF Vishay Semiconductors Availability: 500In StockMOSFETs TO247 1KV 4.3A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 4.3 A | 3.5 Ohms | - 20 V, 20 V | 2 V | 120 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
Mfr: SI6913DQ-T1-GE3 TTI: SI6913DQ-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -12V Vds 8V Vgs TSSOP-8 | 12,000In Stock | Si | SMD/SMT | TSSOP-8 | P-Channel | 2 Channel | 12 V | 5.8 A | 21 mOhms | - 8 V, 8 V | 400 mV | 28 nC | - 55 C | + 150 C | 1.14 W | Enhancement | TrenchFET | Reel | SI6913DQ-GE3 | |||
Mfr: IRFR9010PBF TTI: IRFR9010PBF Vishay Semiconductors Availability: 3,000In StockMOSFETs TO252 P-CH 50V 5.3A | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 50 V | 5.3 A | 500 mOhms | - 20 V, 20 V | 4 V | 9.1 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: SIRC16DP-T1-GE3 TTI: SIRC16DP-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 25V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 60 A | 960 uOhms | - 16 V, 20 V | 1 V | 105 nC | - 55 C | + 150 C | 54.3 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHG21N80AE-GE3 TTI: SIHG21N80AE-GE3 Vishay Semiconductors Availability: 500In StockMOSFETs TO247 800V 16.3A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 17.4 A | 235 mOhms | - 30 V, 30 V | 2 V | 48 nC | - 55 C | + 150 C | 32 W | Enhancement | Tube | |||||
Mfr: SI5459DU-T1-GE3 TTI: SI5459DU-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 12V Vgs PowerPAK ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 1 Channel | 20 V | 8 A | 82 mOhms | - 12 V, 12 V | 1.4 V | 26 nC | - 55 C | + 150 C | 10.9 W | Enhancement | TrenchFET | Reel | SI5459DU-GE3 | |||
Mfr: SIS892ADN-T1-GE3 TTI: SIS892ADN-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 28 A | 27 mOhms | - 20 V, 20 V | 1.5 V | 19.5 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS892ADN-GE3 | |||
Mfr: SISS22DN-T1-GE3 TTI: SISS22DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 60V Vds 20V Vgs PowerPAK 1212-8S | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 60 V | 90.6 A | 4 mOhms | - 20 V, 20 V | 2 V | 44 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFI9Z24GPBF TTI: IRFI9Z24GPBF Vishay Semiconductors Availability: 2,000In StockMOSFETs TO220 P-CH 60V 8.5A | 2,000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 8.5 A | 280 mOhms | - 20 V, 20 V | 4 V | 19 nC | - 55 C | + 175 C | 37 W | Enhancement | Tube | |||||
Mfr: IRFBF20STRLPBF TTI: IRFBF20STRLPBF Vishay Semiconductors Availability: 7,200In StockMOSFETs N-Chan 900V 1.7 Amp | 7,200In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 900 V | 1.7 A | 8 Ohms | - 20 V, 20 V | 2 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Reel | |||||
Mfr: SI7772DP-T1-GE3 TTI: SI7772DP-T1-GE3 Vishay Semiconductors Availability: 36,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 36,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 35.6 A | 13 mOhms | - 20 V, 20 V | 2.5 V | 18.5 nC | - 55 C | + 150 C | 29.8 W | Enhancement | TrenchFET | Reel | SI7772DP-GE3 | |||
Mfr: SIA429DJT-T1-GE3 TTI: SIA429DJT-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 8V Vgs Thin PowerPAK SC-70 | 6,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 20.5 mOhms | - 8 V, 8 V | 1 V | 62 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA429DJT-GE3 | |||
Mfr: IRF820APBF TTI: IRF820APBF Vishay Semiconductors Availability: 1,965In StockMOSFETs TO220 500V 2.5A N-CH MOSFET | 1,965In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 2.5 A | 3 Ohms | - 30 V, 30 V | 4.5 V | 17 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF820APBF-BE3 | ||||
Mfr: IRFR110PBF TTI: IRFR110PBF Vishay Semiconductors Availability: 2,850In StockMOSFETs N-Chan 100V 4.3 Amp | 2,850In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | IRFR110PBF-BE3 | ||||
Mfr: SI7738DP-T1-GE3 TTI: SI7738DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 30 A | 38 mOhms | - 20 V, 20 V | 4 V | 35 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7738DP-GE3 | |||
Mfr: SI4164DY-T1-GE3 TTI: SI4164DY-T1-GE3 Vishay Semiconductors Availability: 7,500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 7,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 30 A | 3.2 mOhms | - 20 V, 20 V | 1.2 V | 95 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4164DY-GE3 |
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