Vishay Semiconductors - MOSFETs
2,045 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHG039N60E-GE3 TTI: SIHG039N60E-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 2,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 63 A | 39 mOhms | 30 V | 3 V | 126 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | |||||
Mfr: SIRS700DP-T1-GE3 TTI: SIRS700DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs SOT669 100V 120A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 100 V | 120 A | 3.2 mOhms | 20 V | 4 V | 86 nC | - 55 C | + 150 C | 132 W | Enhancement | Reel | |||||
Mfr: SIR4606DP-T1-GE3 TTI: SIR4606DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs N-CHANNEL 60-V (D-S) MOSFET | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 4.9 mOhms | 20 V | 2.4 V | 54 nC | - 55 C | + 175 C | 48 W | Enhancement | Reel | |||||
Mfr: SIDR510EP-T1-RE3 TTI: SIDR510EP-T1-RE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs SOT669 100V 148A N-CH MOSFET | 9,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 100 V | 148 A | 3.6 mOhms | 20 V | 4 V | 40 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | |||||
Mfr: SIHP186N60EF-GE3 TTI: SIHP186N60EF-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 600V 18A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 18 A | 225 mOhms | 30 V | 5 V | 65 nC | - 55 C | + 150 C | 223 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHD4N80E-GE3 TTI: SIHD4N80E-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 800V Vds 30V Vgs DPAK (TO-252) | 2,500In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 4.3 A | 1.1 Ohms | 30 V | 2 V | 16 nC | - 55 C | + 150 C | 69 W | Enhancement | Tube | |||||
Mfr: SI7613DN-T1-GE3 TTI: SI7613DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -20V Vds 16V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 14 mOhms | 16 V | 2.2 V | 87 nC | - 50 C | + 150 C | 52.1 W | Enhancement | TrenchFET | Reel | SI7613DN-GE3 | |||
Mfr: SIR668DP-T1-RE3 TTI: SIR668DP-T1-RE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 95 A | 4 mOhms | 20 V | 2 V | 108 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFI9Z24GPBF TTI: IRFI9Z24GPBF Vishay Semiconductors Availability: 2,000In StockMOSFETs TO220 P-CH 60V 8.5A | 2,000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 8.5 A | 280 mOhms | 20 V | 4 V | 19 nC | - 55 C | + 175 C | 37 W | Enhancement | Tube | |||||
Mfr: SI6913DQ-T1-GE3 TTI: SI6913DQ-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -12V Vds 8V Vgs TSSOP-8 | 12,000In Stock | Si | SMD/SMT | TSSOP-8 | P-Channel | 2 Channel | 12 V | 5.8 A | 21 mOhms | 8 V | 400 mV | 28 nC | - 55 C | + 150 C | 1.14 W | Enhancement | TrenchFET | Reel | SI6913DQ-GE3 | |||
Mfr: IRFR1N60APBF TTI: IRFR1N60APBF Vishay Semiconductors Availability: 1,275In StockMOSFETs N-Chan 600V 1.4 Amp | 1,275In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 1.4 A | 7 Ohms | 30 V | 4 V | 14 nC | - 55 C | + 150 C | 36 W | Enhancement | Tube | IRFR1N60APBF-BE3 | ||||
Mfr: SIS892ADN-T1-GE3 TTI: SIS892ADN-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 28 A | 27 mOhms | 20 V | 1.5 V | 19.5 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS892ADN-GE3 | |||
Mfr: SI7738DP-T1-GE3 TTI: SI7738DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 30 A | 38 mOhms | 20 V | 4 V | 35 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7738DP-GE3 | |||
Mfr: IRF820APBF TTI: IRF820APBF Vishay Semiconductors Availability: 1,900In StockMOSFETs TO220 500V 2.5A N-CH MOSFET | 1,900In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 2.5 A | 3 Ohms | 30 V | 4.5 V | 17 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF820APBF-BE3 | ||||
Mfr: IRFI740GPBF TTI: IRFI740GPBF Vishay Semiconductors Availability: 600In StockMOSFETs TO220 400V 5.4A N-CH MOSFET | 600In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.4 A | 550 mOhms | 20 V | 2 V | 66 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: IRFR9010PBF TTI: IRFR9010PBF Vishay Semiconductors Availability: 3,000In StockMOSFETs TO252 P-CH 50V 5.3A | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 50 V | 5.3 A | 500 mOhms | 20 V | 4 V | 9.1 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: IRFR110PBF TTI: IRFR110PBF Vishay Semiconductors Availability: 2,850In StockMOSFETs N-Chan 100V 4.3 Amp | 2,850In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | IRFR110PBF-BE3 | ||||
Mfr: IRFPG40PBF TTI: IRFPG40PBF Vishay Semiconductors Availability: 500In StockMOSFETs TO247 1KV 4.3A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 4.3 A | 3.5 Ohms | 20 V | 2 V | 120 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
Mfr: SI5459DU-T1-GE3 TTI: SI5459DU-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 12V Vgs PowerPAK ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 1 Channel | 20 V | 8 A | 82 mOhms | 12 V | 1.4 V | 26 nC | - 55 C | + 150 C | 10.9 W | Enhancement | TrenchFET | Reel | SI5459DU-GE3 | |||
Mfr: SI4943CDY-T1-GE3 TTI: SI4943CDY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs -20V Vds 20V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 20 V | 8 A | 19.2 mOhms | 20 V | 3 V | 62 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4943CDY-GE3 | |||
Mfr: SIS407DN-T1-GE3 TTI: SIS407DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 25 A | 9.5 mOhms | 8 V | 400 mV | 38 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS407DN-GE3 | |||
Mfr: SI3424CDV-T1-GE3 TTI: SI3424CDV-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 15,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 8 A | 26 mOhms | 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 3.6 W | Enhancement | TrenchFET | Reel | SI3424CDV-T1-BE3 | |||
Mfr: SI3417DV-T1-GE3 TTI: SI3417DV-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -30V Vds 20V Vgs TSOP-6 | 6,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 36 mOhms | 20 V | 3 V | 50 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFI630GPBF TTI: IRFI630GPBF Vishay Semiconductors Availability: 500In StockMOSFETs TO220 200V 5.9A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 5.9 A | 400 mOhms | 20 V | 2 V | 43 nC | - 55 C | + 150 C | 32 W | Enhancement | Tube | |||||
Mfr: SIHG73N60AE-GE3 TTI: SIHG73N60AE-GE3 Vishay Semiconductors Availability: 500In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 60 A | 35 mOhms | 30 V | 4 V | 394 nC | - 55 C | + 150 C | 417 W | Enhancement | Tube |