Vishay Semiconductors - MOSFETs
2,042 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIR404DP-T1-GE3 TTI: SIR404DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 60 A | 1.6 mOhms | - 12 V, 12 V | 600 mV | 36.5 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR404DP-GE3 | |||
Mfr: SIHG039N60E-GE3 TTI: SIHG039N60E-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 2,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 63 A | 39 mOhms | - 30 V, 30 V | 3 V | 126 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | |||||
Mfr: SIHD6N80AE-GE3 TTI: SIHD6N80AE-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs N-CHANNEL 800V DPAK (TO-252) | 6,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 5 A | 950 mOhms | - 30 V, 30 V | 4 V | 15 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Reel | |||||
Mfr: SIR582DP-T1-RE3 TTI: SIR582DP-T1-RE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs PPAKSO8 N-CH 80V 28.9A | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 80 V | 84.1 A | 3.2 mOhms | - 20 V, 20 V | 4 V | 44.5 nC | - 55 C | + 150 C | 92.5 W | Enhancement | Reel | |||||
Mfr: SI7108DN-T1-E3 TTI: SI7108DN-T1-E3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 20V 22A 0.0049Ohm | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 22 A | 4.9 mOhms | - 16 V, 16 V | 2 V | 20 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7108DN-E3 | |||
Mfr: SUM90220E-GE3 TTI: SUM90220E-GE3 Vishay Semiconductors Availability: 800In StockMOSFETs 200V Vds 20V Vgs TO-263 | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 64 A | 18 mOhms | - 20 V, 20 V | 2 V | 48 nC | - 55 C | + 175 C | 230 W | Enhancement | Reel | |||||
Mfr: SIHB33N60EF-GE3 TTI: SIHB33N60EF-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 2,000In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 600 V | 33 A | 98 mOhms | - 30 V, 30 V | 4 V | 103 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | ||||||
Mfr: SIA918EDJ-T1-GE3 TTI: SIA918EDJ-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 8V Vgs PowerPAK SC-70 | 6,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 30 V | 4.5 A | 58 mOhms | - 8 V, 8 V | 400 mV | 9.5 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7613DN-T1-GE3 TTI: SI7613DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -20V Vds 16V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 14 mOhms | - 16 V, 16 V | 2.2 V | 87 nC | - 50 C | + 150 C | 52.1 W | Enhancement | TrenchFET | Reel | SI7613DN-GE3 | |||
Mfr: SIJ470DP-T1-GE3 TTI: SIJ470DP-T1-GE3 Vishay Semiconductors Availability: 6,000In Stock12,000 On Order Expected 09-Oct-26 MOSFETs 100V 9.1mOhm@10V 58.8A N-CH | 6,000In Stock12,000 On Order Expected 09-Oct-26 | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 100 V | 58.8 A | 7.6 mOhms | - 20 V, 20 V | 2.3 V | 56 nC | - 55 C | + 150 C | 56.8 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SIDR870ADP-T1-GE3 TTI: SIDR870ADP-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8DC | 12,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 95 A | 10.5 mOhms | - 20 V, 20 V | 3 V | 25.5 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHD4N80E-GE3 TTI: SIHD4N80E-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 800V Vds 30V Vgs DPAK (TO-252) | 2,500In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 4.3 A | 1.1 Ohms | - 30 V, 30 V | 2 V | 16 nC | - 55 C | + 150 C | 69 W | Enhancement | Tube | |||||
Mfr: SIRS700DP-T1-GE3 TTI: SIRS700DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs SOT669 100V 120A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 100 V | 120 A | 3.2 mOhms | - 20 V, 20 V | 4 V | 86 nC | - 55 C | + 150 C | 132 W | Enhancement | Reel | |||||
Mfr: SIHG23N60E-GE3 TTI: SIHG23N60E-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 2,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 23 A | 158 mOhms | - 30 V, 30 V | 4 V | 63 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: SIDR510EP-T1-RE3 TTI: SIDR510EP-T1-RE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs SOT669 100V 148A N-CH MOSFET | 9,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 100 V | 148 A | 3.6 mOhms | - 20 V, 20 V | 4 V | 40 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | |||||
Mfr: SIR4606DP-T1-GE3 TTI: SIR4606DP-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs N-CHANNEL 60-V (D-S) MOSFET | 12,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 4.9 mOhms | - 20 V, 20 V | 2.4 V | 54 nC | - 55 C | + 175 C | 48 W | Enhancement | Reel | |||||
Mfr: SI4100DY-T1-GE3 TTI: SI4100DY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs 100V Vds 20V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 6.8 A | 63 mOhms | - 20 V, 20 V | 2 V | 20 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4100DY-GE3 | |||
Mfr: IRFU9310PBF TTI: IRFU9310PBF Vishay Semiconductors Availability: 6,000In StockMOSFETs P-Chan 400V 1.8 Amp | 6,000In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | - 20 V, 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
Mfr: SIHP186N60EF-GE3 TTI: SIHP186N60EF-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 600V 18A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 18 A | 225 mOhms | - 30 V, 30 V | 5 V | 65 nC | - 55 C | + 150 C | 223 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHG33N60E-GE3 TTI: SIHG33N60E-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 2,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 33 A | 98 mOhms | - 30 V, 30 V | 4 V | 103 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | |||||
Mfr: SI4168DY-T1-GE3 TTI: SI4168DY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 24 A | 5.7 mOhms | - 20 V, 20 V | 1 V | 44 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4168DY-GE3 | |||
Mfr: SISH407DN-T1-GE3 TTI: SISH407DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds; +/-8V Vgs PowerPAK 1212-8SH | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8SH-8 | P-Channel | 1 Channel | 20 V | 25 A | 9.5 mOhms | - 8 V, 8 V | 1 V | 93.8 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
Mfr: SI7117DN-T1-E3 TTI: SI7117DN-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -150V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 150 V | 2.17 A | 1.2 Ohms | - 20 V, 20 V | 4.5 V | 7.7 nC | - 55 C | + 150 C | 12.5 W | Enhancement | TrenchFET | Reel | SI7117DN-E3 | |||
Mfr: SIZF640DT-T1-GE3 TTI: SIZF640DT-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs PPAIR6X5 2NCH 40V 41A | 6,000In Stock | Si | SMD/SMT | PowerPAIR 6 x 5FS-8 | N-Channel | 2 Channel | 30 V | 159 A | 1.37 mOhms | - 16 V, 20 V | 2.4 V | 30 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Bulk | |||||
Mfr: SISS5708DN-T1-GE3 TTI: SISS5708DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs PWRPK 150V 33.8A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 150 V | - 20 V, 20 V | 4 V | - 55 C | + 175 C | Enhancement | Reel |
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