Vishay Semiconductors - MOSFETs
2,045 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFBC40APBF TTI: IRFBC40APBF Vishay Semiconductors Availability: 50In StockMOSFETs TO220 600V 6.2A N-CH MOSFET | 50In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 30 V | 4 V | 42 nC | - 55 C | + 150 C | 96 W | Enhancement | Tube | IRFBC40APBF-BE3 | ||||
Mfr: SI3410DV-T1-GE3 TTI: SI3410DV-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 3,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 8 A | 19.5 mOhms | 20 V | 1 V | 33 nC | - 55 C | + 150 C | 4.1 W | Enhancement | TrenchFET | Reel | SI3410DV-GE3 | |||
Mfr: IRFI840GPBF TTI: IRFI840GPBF Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 500V 4.6A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4.6 A | 850 mOhms | 20 V | 2 V | 67 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
350In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRFZ40PBF-BE3 | |||||
Mfr: SIR870BDP-T1-RE3 TTI: SIR870BDP-T1-RE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs N-CHANNEL 100 V | 3,000In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | 20 V | 3 V | 73 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | |||||
Mfr: SI7129DN-T1-GE3 TTI: SI7129DN-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 11.4 mOhms | 20 V | 2.8 V | 47.5 nC | - 50 C | + 150 C | 52.1 W | Enhancement | TrenchFET | Reel | SI7129DN-GE3 | |||
Mfr: SI4116DY-T1-GE3 TTI: SI4116DY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs 25V Vds 12V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 25 V | 18 A | 8.6 mOhms | 12 V | 600 mV | 56 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4466DY-T1-E3-S | |||
Mfr: SI7119DN-T1-GE3 TTI: SI7119DN-T1-GE3 Vishay Semiconductors Availability: 21,000In StockMOSFETs -200V Vds 20V Vgs PowerPAK 1212-8 | 21,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 1.05 Ohms | 20 V | 4 V | 16.2 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7119DN-GE3 | |||
Mfr: SI2318CDS-T1-GE3 TTI: SI2318CDS-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 40V Vds 20V Vgs SOT-23 | 9,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 5.6 A | 42 mOhms | 20 V | 2.5 V | 2.9 nC | - 55 C | + 150 C | 2.1 W | Enhancement | TrenchFET | Reel | SI2318CDS-T1-BE3 SI2318CDS-GE3 | |||
Mfr: SIR800ADP-T1-RE3 TTI: SIR800ADP-T1-RE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V Vds; 12/-8V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 177 A | 1.35 mOhms | - 8 V, 12 V | 600 mV | 53 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHD2N80E-GE3 TTI: SIHD2N80E-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 800V Vds 30V Vgs DPAK (TO-252) | 12,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 2.8 A | 2.38 Ohms | 30 V | 4 V | 9.8 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Reel | |||||
Mfr: SIRA18ADP-T1-GE3 TTI: SIRA18ADP-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30.6 A | 8.7 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 14.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI5515CDC-T1-GE3 TTI: SI5515CDC-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs -20V Vds 8V Vgs 1206-8 ChipFET | 18,000In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel, P-Channel | 2 Channel | 20 V | 4 A | 36 mOhms, 100 mOhms | 8 V | 400 mV, 800 mV | 11.3 nC, 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5515CDC-GE3 | |||
Mfr: SUP70030E-GE3 TTI: SUP70030E-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs 100V Vds; 20V Vgs TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 150 A | 3.18 mOhms | 20 V | 2 V | 214 nC | - 55 C | + 175 C | 375 W | Enhancement | Tube | |||||
Mfr: SISH407DN-T1-GE3 TTI: SISH407DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds; +/-8V Vgs PowerPAK 1212-8SH | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8SH-8 | P-Channel | 1 Channel | 20 V | 25 A | 9.5 mOhms | 8 V | 1 V | 93.8 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
Mfr: SI7117DN-T1-E3 TTI: SI7117DN-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -150V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 150 V | 2.17 A | 1.2 Ohms | 20 V | 4.5 V | 7.7 nC | - 55 C | + 150 C | 12.5 W | Enhancement | TrenchFET | Reel | SI7117DN-E3 | |||
Mfr: SIHK045N60EF-T1GE3 TTI: SIHK045N60EF-T1GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs TOLL 600V 47A E SERIES | 2,000In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 80 V | 66 A | 12.5 mOhms | 20 V | 2.5 V | 45 nC | - 55 C | + 175 C | 135 W | Enhancement | Reel | |||||
Mfr: SIHG125N60EF-GE3 TTI: SIHG125N60EF-GE3 Vishay Semiconductors Availability: 500In StockMOSFETs TO247 600V 25A N-CH MOSFET | 500In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 25 A | 125 mOhms | 30 V | 5 V | 31 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | ||||||
Mfr: SIZF640DT-T1-GE3 TTI: SIZF640DT-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs PPAIR6X5 2NCH 40V 41A | 6,000In Stock | Si | SMD/SMT | PowerPAIR 6 x 5FS-8 | N-Channel | 2 Channel | 30 V | 159 A | 1.37 mOhms | - 16 V, 20 V | 2.4 V | 30 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Bulk | |||||
Mfr: SI3460DDV-T1-GE3 TTI: SI3460DDV-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 20V Vds 8V Vgs TSOP-6 | 15,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 20 V | 7.9 A | 28 mOhms | 8 V | 1 V | 18 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3460DDV-T1-BE3 SI3460DDV-GE3 | |||
Mfr: SI2329DS-T1-GE3 TTI: SI2329DS-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -8V Vds 5V Vgs SOT-23 | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 8 V | 6 A | 30 mOhms | 5 V | 350 mV | 19.3 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8410DB-T2-E1 TTI: SI8410DB-T2-E1 Vishay Semiconductors Availability: 3,000In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 1 x 1 | 3,000In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 20 V | 5.7 A | 37 mOhms | 8 V | 850 mV | 10.4 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SIHG068N60EF-GE3 TTI: SIHG068N60EF-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs TO247 600V 41A N-CH MOSFET | 2,500In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 41 A | 68 mOhms | 30 V | 5 V | 27 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | ||||||
Mfr: IRFI510GPBF TTI: IRFI510GPBF Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 100V 4.5A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 4.5 A | 540 mOhms | 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 27 W | Enhancement | Tube | |||||
Mfr: IRFIZ14GPBF TTI: IRFIZ14GPBF Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 N-CH 60V 8A | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 8 A | 200 mOhms | 20 V | 2 V | 11 nC | - 55 C | + 175 C | 27 W | Enhancement | Tube |