Vishay Semiconductors - MOSFETs
2,042 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFBG30PBF TTI: IRFBG30PBF Vishay Semiconductors Availability: 1,650In Stock2,000 On Order Expected 03-Jun-27 MOSFETs TO220 1KV 3.1A N-CH MOSFET | 1,650In Stock2,000 On Order Expected 03-Jun-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | - 20 V, 20 V | 4 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBG30PBF-BE3 | ||||
Mfr: IRF9640PBF TTI: IRF9640PBF Vishay Semiconductors Availability: 5,650In StockMOSFETs TO220 200V 11A P-CH MOSFET | 5,650In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | - 20 V, 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF9640PBF-BE3 | ||||
Mfr: SI2302CDS-T1-GE3 TTI: SI2302CDS-T1-GE3 Vishay Semiconductors Availability: 60,000In Stock72,000 On Order Expected MOSFETs 20V Vds 8V Vgs SOT-23 | 60,000In Stock72,000 On Order Expected | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | - 8 V, 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-GE3 | |||
Mfr: SUM90P10-19L-E3 TTI: SUM90P10-19L-E3 Vishay Semiconductors Availability: 15,200In StockMOSFETs 100V 90A 375W 19mohm @ 10V | 15,200In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 90 A | 19 mOhms | - 20 V, 20 V | 1 V | 217 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
7,250In Stock1,000 On Order Expected 10-Jun-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | - 20 V, 20 V | 4 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF530PBF-BE3 IRF520SPBF | |||||
700In Stock2,600 On Order Expected 07-Oct-26 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | - 20 V, 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740PBF-BE3 SIHF740-E3 | |||||
Mfr: SI2356DS-T1-GE3 TTI: SI2356DS-T1-GE3 Vishay Semiconductors Availability: 27,000In Stock39,000 On Order Expected MOSFETs 40V Vds 12V Vgs SOT-23 | 27,000In Stock39,000 On Order Expected | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 4.3 A | 51 mOhms | - 12 V, 12 V | 1.5 V | 3.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2356DS-T1-BE3 | |||
Mfr: SISS27DN-T1-GE3 TTI: SISS27DN-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8S | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 50 A | 5.6 mOhms | - 20 V, 20 V | 1 V | 92 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFP360PBF TTI: IRFP360PBF Vishay Semiconductors Availability: 6,000In StockMOSFETs TO247 400V 23A N-CH MOSFET | 6,000In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 400 V | 23 A | 200 mOhms | - 20 V, 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SI9407BDY-T1-GE3 TTI: SI9407BDY-T1-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs -60V Vds 20V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 120 mOhms | - 20 V, 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI9407BDY-GE3 | |||
Mfr: IRF9530PBF TTI: IRF9530PBF Vishay Semiconductors Availability: 21In Stock1,000 On Order Expected 16-Jun-27 MOSFETs TO220 100V 12A P-CH MOSFET | 21In Stock1,000 On Order Expected 16-Jun-27 | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 12 A | 300 mOhms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF9530PBF-BE3 | ||||
1,150In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF-BE3 | |||||
Mfr: SI2374DS-T1-GE3 TTI: SI2374DS-T1-GE3 Vishay Semiconductors Availability: 45,000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 45,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 5.9 A | 30 mOhms | - 8 V, 8 V | 1 V | 7.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2374DS-T1-BE3 | |||
Mfr: IRFP460APBF TTI: IRFP460APBF Vishay Semiconductors Availability: 600In Stock1,000 On Order Expected 14-Jul-26 MOSFETs TO247 500V 20A N-CH MOSFET | 600In Stock1,000 On Order Expected 14-Jul-26 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | - 30 V, 30 V | 2 V | 105 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SI7469DP-T1-E3 TTI: SI7469DP-T1-E3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -80V Vds 20V Vgs PowerPAK SO-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 80 V | 28 A | 29 mOhms | - 20 V, 20 V | 3 V | 160 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7469DP-E3 | |||
Mfr: IRFR420PBF TTI: IRFR420PBF Vishay Semiconductors Availability: 49,425In StockMOSFETs TO252 500V 3.3A N-CH MOSFET | 49,425In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 3.3 A | 3 Ohms | - 30 V, 30 V | 2 V | 17 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
550In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4.5 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF830PBF-BE3 SIHF830-E3 | |||||
Mfr: IRF9540PBF TTI: IRF9540PBF Vishay Semiconductors Availability: 5,200In StockMOSFETs TO220 100V 19A P-CH MOSFET | 5,200In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 19 A | 200 mOhms | - 20 V, 20 V | 4 V | 61 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRF9540PBF-BE3 | ||||
Mfr: SI2371EDS-T1-GE3 TTI: SI2371EDS-T1-GE3 Vishay Semiconductors Availability: 21,000In StockMOSFETs -30V Vds 12V Vgs SOT-23 | 21,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 4.8 A | 45 mOhms | - 12 V, 12 V | 1.5 V | 10.6 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2371EDS-T1-BE3 | |||
Mfr: IRFL9014TRPBF TTI: IRFL9014TRPBF Vishay Semiconductors Availability: 2,500In Stock20,000 On Order Expected MOSFETs P-Chan 60V 1.1 Amp | 2,500In Stock20,000 On Order Expected | Si | SMD/SMT | SOT-223-4 | P-Channel | 1 Channel | 60 V | 1.8 A | 500 mOhms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL9014TRPBF-BE3 | ||||
Mfr: SI4925DDY-T1-GE3 TTI: SI4925DDY-T1-GE3 Vishay Semiconductors Availability: 40,000In Stock42,500 On Order Expected MOSFETs -30V Vds 20V Vgs SO-8 | 40,000In Stock42,500 On Order Expected | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 30 V | 8 A | 29 mOhms | - 20 V, 20 V | 1 V | 32 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4925DDY-GE3 | |||
3,500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF730PBF-BE3 | |||||
Mfr: SIS434DN-T1-GE3 TTI: SIS434DN-T1-GE3 Vishay Semiconductors Availability: 216,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 216,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 35 A | 6.3 mOhms | - 20 V, 20 V | 1.2 V | 40 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS434DN-GE3 | |||
Mfr: SIA483DJ-T1-GE3 TTI: SIA483DJ-T1-GE3 Vishay Semiconductors Availability: 33,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK SC-70 | 33,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 12 A | 16 mOhms | - 20 V, 20 V | 2.2 V | 45 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFP254PBF TTI: IRFP254PBF Vishay Semiconductors Availability: 10,775In StockMOSFETs TO247 250V 23A N-CH MOSFET | 10,775In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 23 A | 140 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube |
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