Vishay Semiconductors - MOSFETs
2,045 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: 2N7002K-T1-GE3 TTI: 2N7002K-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 60V Vds 20V Vgs SOT-23 | 9,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 300 mA | 2 Ohms | 20 V | 1 V | 400 pC | - 55 C | + 150 C | 350 mW | Enhancement | Reel | 2N7002K-GE3 | ||||
Mfr: SUM90P10-19L-E3 TTI: SUM90P10-19L-E3 Vishay Semiconductors Availability: 20,000In StockMOSFETs 100V 90A 375W 19mohm @ 10V | 20,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 90 A | 19 mOhms | 20 V | 1 V | 217 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
2,200In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | 20 V | 4 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF530PBF-BE3 IRF520SPBF | |||||
Mfr: IRFBG30PBF TTI: IRFBG30PBF Vishay Semiconductors Availability: 6,450In Stock1,850 On Order Expected 30-Sep-26 MOSFETs TO220 1KV 3.1A N-CH MOSFET | 6,450In Stock1,850 On Order Expected 30-Sep-26 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | 20 V | 4 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBG30PBF-BE3 | ||||
40,150In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840PBF-BE3 SIHF840-E3 | |||||
Mfr: IRF9640PBF TTI: IRF9640PBF Vishay Semiconductors Availability: 6,750In StockMOSFETs TO220 200V 11A P-CH MOSFET | 6,750In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF9640PBF-BE3 | ||||
Mfr: SI2302CDS-T1-GE3 TTI: SI2302CDS-T1-GE3 Vishay Semiconductors Availability: 60,000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 60,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-GE3 | |||
Mfr: IRFL110TRPBF TTI: IRFL110TRPBF Vishay Semiconductors Availability: 35,000In StockMOSFETs N-Chan 100V 1.5 Amp | 35,000In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL110TRPBF-BE3 | ||||
900In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4.5 A | 1.5 Ohms | 20 V | 4 V | 38 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF830PBF-BE3 SIHF830-E3 | |||||
Mfr: IRFR420PBF TTI: IRFR420PBF Vishay Semiconductors Availability: 37,650In StockMOSFETs TO252 500V 3.3A N-CH MOSFET | 37,650In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 3.3 A | 3 Ohms | 30 V | 2 V | 17 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: IRF9520PBF TTI: IRF9520PBF Vishay Semiconductors Availability: 3,600In StockMOSFETs TO220 100V 6.8A P-CH MOSFET | 3,600In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 6.8 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRF9520PBF-BE3 | ||||
Mfr: IRFP150PBF TTI: IRFP150PBF Vishay Semiconductors Availability: 1,950In StockMOSFETs TO247 100V 41A N-CH MOSFET | 1,950In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 41 A | 55 mOhms | 20 V | 2 V | 140 nC | - 55 C | + 175 C | 230 W | Enhancement | Tube | |||||
Mfr: SI9407BDY-T1-GE3 TTI: SI9407BDY-T1-GE3 Vishay Semiconductors Availability: 5,000In Stock2,500 On Order Expected 05-Oct-26 MOSFETs -60V Vds 20V Vgs SO-8 | 5,000In Stock2,500 On Order Expected 05-Oct-26 | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 120 mOhms | 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI9407BDY-GE3 | |||
Mfr: IRFS9N60APBF TTI: IRFS9N60APBF Vishay Semiconductors Availability: 2,150In StockMOSFETs TO263 600V 9.2A N-CH MOSFET | 2,150In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | 30 V | 2 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | |||||
Mfr: SIA483DJ-T1-GE3 TTI: SIA483DJ-T1-GE3 Vishay Semiconductors Availability: 81,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK SC-70 | 81,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 12 A | 16 mOhms | 20 V | 2.2 V | 45 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
1,750In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | 20 V | 4 V | 38 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF730PBF-BE3 | |||||
Mfr: SIS434DN-T1-GE3 TTI: SIS434DN-T1-GE3 Vishay Semiconductors Availability: 21,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 21,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 35 A | 6.3 mOhms | 20 V | 1.2 V | 40 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS434DN-GE3 | |||
Mfr: IRFL9014TRPBF TTI: IRFL9014TRPBF Vishay Semiconductors Availability: 22,500In StockMOSFETs P-Chan 60V 1.1 Amp | 22,500In Stock | Si | SMD/SMT | SOT-223-4 | P-Channel | 1 Channel | 60 V | 1.8 A | 500 mOhms | 20 V | 4 V | 12 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL9014TRPBF-BE3 | ||||
Mfr: IRF540STRLPBF TTI: IRF540STRLPBF Vishay Semiconductors Availability: 73,600In StockMOSFETs TO263 100V 28A N-CH MOSFET | 73,600In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 175 C | 3.7 W | Enhancement | Reel | |||||
Mfr: SI4925DDY-T1-GE3 TTI: SI4925DDY-T1-GE3 Vishay Semiconductors Availability: 40,000In Stock30,000 On Order Expected 10-Oct-29 MOSFETs -30V Vds 20V Vgs SO-8 | 40,000In Stock30,000 On Order Expected 10-Oct-29 | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 30 V | 8 A | 29 mOhms | 20 V | 1 V | 32 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4925DDY-GE3 | |||
Mfr: IRFP250PBF TTI: IRFP250PBF Vishay Semiconductors Availability: 7,425In StockMOSFETs TO247 200V 30A N-CH MOSFET | 7,425In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 30 A | 85 mOhms | 20 V | 2 V | 140 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: IRF9640STRLPBF TTI: IRF9640STRLPBF Vishay Semiconductors Availability: 3,200In Stock7,200 On Order Expected MOSFETs TO263 200V 11A P-CH MOSFET | 3,200In Stock7,200 On Order Expected | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: IRFP450PBF TTI: IRFP450PBF Vishay Semiconductors Availability: 75In StockMOSFETs TO247 500V 14A N-CH MOSFET | 75In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | 20 V | 2 V | 150 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: IRF9Z34PBF TTI: IRF9Z34PBF Vishay Semiconductors Availability: 8,900In StockMOSFETs TO220 P-CH 60V 18A | 8,900In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF9Z34PBF-BE3 | ||||
1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF-BE3 |