Vishay / Siliconix - SiC MOSFETs
8 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Vishay | Through Hole | TO-247AD-3L | N-Channel | 1 Channel | 1200 V | 53 A | 54 mOhms | - 10 V, + 22 V | 2.9 V | 69 nC | - 55 C | + 175 C | 288 W | Enhancement | |||||
0In Stock | Vishay | Through Hole | TO-247AD-3L | N-Channel | 1 Channel | 1200 V | 53 A | 54 mOhms | - 10 V, + 22 V | 2.9 V | 69 nC | - 55 C | + 175 C | 288 W | Enhancement | |||||
0In Stock | Vishay | Through Hole | TO-247AD-4L | N-Channel | 1 Channel | 1200 V | 18 A | 200 mOhms | - 10 V, + 22 V | 3.1 V | 25 nC | - 55 C | + 175 C | 109 W | Enhancement | |||||
0In Stock | Vishay | Through Hole | TO-247AD-4L | N-Channel | 1 Channel | 750 V | 51 A | 50 mOhms | - 10 V, + 22 V | 2.65 V | 77 nC | - 55 C | + 175 C | 208 W | Enhancement | |||||
0In Stock | Vishay | Through Hole | TO-247AD-4L | N-Channel | 1 Channel | 750 V | 51 A | 50 mOhms | - 10 V, + 22 V | 2.65 V | 77 nC | - 55 C | + 175 C | 208 W | Enhancement | |||||
0In Stock | Vishay | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1200 V | 12 A | 313 mOhms | - 10 V, + 22 V | 3 V | 15 nC | - 55 C | + 175 C | 85 W | Enhancement | |||||
0In Stock | Vishay | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1200 V | 32 A | 100 mOhms | - 10 V, + 22 V | 2.9 V | 47 nC | - 55 C | + 175 C | 185 W | Enhancement | |||||
0In Stock | Vishay | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1200 V | 41 A | 79 mOhms | - 10 V, + 22 V | 2.9 V | 58 nC | - 55 C | + 175 C | 221 W | Enhancement |