Vishay / Siliconix - MOSFETs
3,852 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHP23N60E-BE3 TTI: SIHP23N60E-BE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs TO220 600V 23A N-CH MOSFET | 2,500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 23 A | 158 mOhms | - 30 V, 30 V | 4 V | 95 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | SIHP23N60E-GE3 | ||||
Mfr: SIHG120N60E-GE3 TTI: SIHG120N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 2,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | - 30 V, 30 V | 3 V | 45 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
Mfr: SISS10DN-T1-GE3 TTI: SISS10DN-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8S | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 60 A | 2.65 mOhms | - 16 V, 20 V | 2.4 V | 75 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIDR170DP-T1-RE3 TTI: SIDR170DP-T1-RE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT669 100V 95A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 95 A | 4.8 mOhms | - 20 V, 20 V | 1 V | 93 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | SIDR170DP | ||||
Mfr: SIJK140E-T1-GE3 TTI: SIJK140E-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs N-CHANNEL 40-V (D-S) MOSFET | 3,000In Stock | Si | SMD/SMT | PowerPAK 10x12 | N-Channel | 1 Channel | 40 V | 795 A | 470 uOhms | - 20 V, 20 V | 3.5 V | 312 nC | - 55 C | + 175 C | 536 W | Enhancement | Reel | |||||
Mfr: SIHA186N60EF-GE3 TTI: SIHA186N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 600V 8.4A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 650 V | 8.4 A | 193 mOhms | - 30 V, 30 V | 5 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
Mfr: SIZ270DT-T1-GE3 TTI: SIZ270DT-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs Dual N-Ch 100V(D-S) | 6,000In Stock | Si | SMD/SMT | N-Channel | 2 Channel | 100 V | 19.1 A, 19.5 A | 37.7 mOhms, 39.4 mOhms | - 20 V, 20 V | 2.4 V | 13.3 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET | Reel | |||||
Mfr: IRF9630PBF-BE3 TTI: IRF9630PBF-BE3 Vishay / Siliconix Availability: 1,850In StockMOSFETs TO220 200V 6.5A P-CH MOSFET | 1,850In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 6.5 A | 800 mOhms | - 20 V, 20 V | 4 V | 29 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF9630PBF | ||||
Mfr: SIHB28N60EF-GE3 TTI: SIHB28N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 1,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 28 A | 123 mOhms | - 30 V, 30 V | 2 V | 120 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SIHG11N80E-GE3 TTI: SIHG11N80E-GE3 Vishay / Siliconix Availability: 450In StockMOSFETs 800V Vds 30V Vgs TO-247AC | 450In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 88 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
Mfr: SIS606BDN-T1-GE3 TTI: SIS606BDN-T1-GE3 Vishay / Siliconix Availability: 15,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 15,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 35.3 A | 14.5 mOhms | - 20 V, 20 V | 2 V | 20 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHH070N60EF-T1GE3 TTI: SIHH070N60EF-T1GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 600V PowerPAK 8x8 N-CHANNEL | 6,000In Stock | Si | SMD/SMT | PowerPAK-8 x 8 | N-Channel | 1 Channel | 600 V | 36 A | 71 mOhms | - 30 V, 30 V | 5 V | 50 nC | - 55 C | + 150 C | 202 W | Enhancement | Tube | |||||
Mfr: SIHB186N60EF-GE3 TTI: SIHB186N60EF-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO263 600V 8.4A N-CH MOSFET | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 8.4 A | 168 mOhms | - 30 V, 30 V | 5 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | |||||
Mfr: IRFL014TRPBF-BE3 TTI: IRFL014TRPBF-BE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs SOT223 N-CH 60V 2.7A | 2,500In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 60 V | 2.7 A | 200 mOhms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRFL014TRPBF | ||||
Mfr: SI3440ADV-T1-BE3 TTI: SI3440ADV-T1-BE3 Vishay / Siliconix Availability: 36,000In StockMOSFETs TSOP6 150V 2.2A N-CH MOSFET | 36,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 150 V | 2.2 A | 380 mOhms | - 20 V, 20 V | 4 V | 1.65 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | SI3440ADV-T1-GE3 | ||||
Mfr: SIHP4N80E-BE3 TTI: SIHP4N80E-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO220 800V 4.3A N-CH MOSFET | 3,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4.3 A | 1.1 Ohms | - 30 V, 30 V | 2 V | 32 nC | - 55 C | + 150 C | 69 W | Enhancement | Tube | SIHP4N80E-GE3 | ||||
Mfr: SI3473CDV-T1-BE3 TTI: SI3473CDV-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs TSOP6 P-CH 12V 8A | 12,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 12 V | 8 A | 22 mOhms | - 8 V, 8 V | 1 V | 65 nC | - 55 C | + 150 C | 4.2 W | Enhancement | Reel | SI3473CDV-T1-E3 | ||||
Mfr: SISS26DN-T1-GE3 TTI: SISS26DN-T1-GE3 Vishay / Siliconix Availability: 15,000In StockMOSFETs 60V Vds 20V Vgs PowerPAK 1212-8S | 15,000In Stock | Si | SMD/SMT | PowerPAK-1212-8S-8 | N-Channel | 1 Channel | 60 V | 60 A | 3.7 mOhms | - 20 V, 20 V | 3.6 V | 24.5 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI1922EDH-T1-BE3 TTI: SI1922EDH-T1-BE3 Vishay / Siliconix Availability: 75,000In StockMOSFETs SOT363 2NCH 20V 1.3A | 75,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.3 A | 198 mOhms | - 8 V, 8 V | 1 V | 2.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1922EDH-T1-GE3 | |||
Mfr: SIHG47N60AEF-GE3 TTI: SIHG47N60AEF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 1,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 40 A | 70 mOhms | - 30 V, 30 V | 2 V | 189 nC | - 55 C | + 150 C | 313 W | Enhancement | Tube | |||||
Mfr: SIHA17N80AE-GE3 TTI: SIHA17N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 800V 7A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 7 A | 250 mOhms | - 30 V, 30 V | 4 V | 41 nC | - 55 C | + 155 C | 34 W | Enhancement | Reel | |||||
Mfr: SIHB21N80AE-GE3 TTI: SIHB21N80AE-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO263 800V 17.4A N-CH MOSFET | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 17.4 A | 205 mOhms | - 30 V, 30 V | 4 V | 48 nC | - 55 C | + 155 C | 32 W | Enhancement | Reel | |||||
Mfr: SIHA24N80AE-GE3 TTI: SIHA24N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs N-CHANNEL 800V E Series Pwr MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 9 A | 184 mOhms | - 30 V, 30 V | 4 V | 59 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | |||||
Mfr: SIHP15N50E-BE3 TTI: SIHP15N50E-BE3 Vishay / Siliconix Availability: 4,900In StockMOSFETs TO220 500V 14.5A N-CH MOSFET | 4,900In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 14.5 A | 243 mOhms | - 30 V, 30 V | 4 V | 66 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | SIHP15N50E-GE3 | ||||
Mfr: SIHP080N60E-GE3 TTI: SIHP080N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO220 600V 35A N-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 35 A | 80 mOhms | - 30 V, 30 V | 5 V | 42 nC | - 55 C | + 150 C | 227 W | Enhancement | Bulk |
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