Vishay / Siliconix - MOSFETs
3,860 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SIHP6N80E-BE3 TTI: SIHP6N80E-BE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 800V 5.4A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 5.4 A | 820 mOhms | 30 V | 4 V | 44 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | SIHP6N80E-GE3 | ||||
Mfr: SIS890ADN-T1-GE3 TTI: SIS890ADN-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs PWRPK 100V 24.7A N-CH MOSFET | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 24.7 A | 25.5 mOhms | 20 V | 2.5 V | 19.2 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2377EDS-T1-BE3 TTI: SI2377EDS-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT23 P-CH 20V 3.7A | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 4.4 A | 61 mOhms | 8 V | 1 V | 7.6 nC | - 55 C | + 150 C | 1.8 W | Enhancement | Reel | SI2377EDS-T1-GE3 | ||||
Mfr: SI3424CDV-T1-BE3 TTI: SI3424CDV-T1-BE3 Vishay / Siliconix Availability: 21,000In StockMOSFETs TSOP6 N-CH 30V 7.5A | 21,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 8 A | 26 mOhms | 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | SI3424CDV-T1-GE3 | ||||
Mfr: SIRA12BDP-T1-GE3 TTI: SIRA12BDP-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 4.3 mOhms | - 16 V, 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 38 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIB4317EDK-T1-GE3 TTI: SIB4317EDK-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SC75 P-CH 30V 4.3A | 9,000In Stock | Si | SMD/SMT | SC-75-6 | 1 Channel | 30 V | 4.3 A | 65 mOhms | 12 V | 1.3 V | 6.6 nC | - 55 C | + 150 C | 1.95 W | Enhancement | Reel | ||||||
Mfr: SIS406DN-T1-GE3 TTI: SIS406DN-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 30V Vds 25V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 14 A | 11 mOhms | 25 V | 1 V | 28 nC | - 55 C | + 150 C | 3.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS406DN-GE3 | |||
Mfr: IRF820PBF-BE3 TTI: IRF820PBF-BE3 Vishay / Siliconix Availability: 30,000In StockMOSFETs TO220 500V 2.5A N-CH MOSFET | 30,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 2.5 A | 3 Ohms | 20 V | 4 V | 24 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF820PBF | ||||
Mfr: SIHA11N80E-GE3 TTI: SIHA11N80E-GE3 Vishay / Siliconix Availability: 5,000In StockMOSFETs 800V Vds 30V Vgs TO-220 FULLPAK | 5,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 12 A | 380 mOhms | 30 V | 4 V | 88 nC | - 55 C | + 150 C | 34 W | Enhancement | Reel | |||||
Mfr: SISA88DN-T1-GE3 TTI: SISA88DN-T1-GE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40.5 A | 6.7 mOhms | - 16 V, 20 V | 1.1 V | 12.5 nC | - 55 C | + 150 C | 19.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR570DP-T1-RE3 TTI: SIR570DP-T1-RE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT669 150V 77.4A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 150 V | 77.4 A | 7.9 mOhms | 20 V | 4 V | 46.9 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SISHA14DN-T1-GE3 TTI: SISHA14DN-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs PPAK1212 N-CH 30V 19.7A | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 20 A | 5.1 mOhms | - 16 V, 20 V | 1.1 V | 19.4 nC | - 55 C | + 150 C | 26.5 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SIHF15N60E-GE3 TTI: SIHF15N60E-GE3 Vishay / Siliconix Availability: 10,000In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 10,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 15 A | 280 mOhms | 30 V | 4 V | 39 nC | - 55 C | + 150 C | 34 W | Enhancement | Tube | |||||
Mfr: SIHP30N60E-GE3 TTI: SIHP30N60E-GE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 4,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 29 A | 125 mOhms | 30 V | 2.8 V | 85 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SUD90330E-BE3 TTI: SUD90330E-BE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs N-CHANNEL 200V (D-S) | 4,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 35.1 A | 37.5 mOhms | 20 V | 4 V | 21 nC | - 55 C | + 175 C | 125 W | Enhancement | TrenchFET | Reel | SUD90330E-GE3 | |||
Mfr: SIHD11N80AE-GE3 TTI: SIHD11N80AE-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO252 800V 8A N-CH MOSFET | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 8 A | 450 mOhms | 30 V | 2 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | SIHD11N80AE | ||||
Mfr: IRFBC40PBF-BE3 TTI: IRFBC40PBF-BE3 Vishay / Siliconix Availability: 350In StockMOSFETs TO220 600V 6.2A N-CH MOSFET | 350In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 20 V | 4 V | 60 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBC40PBF | ||||
Mfr: SIHG105N60EF-GE3 TTI: SIHG105N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs EF Series Pwr MOSFET w/Fast Body Diode | 1,000In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 29 A | 102 mOhms | 30 V | 5 V | 35 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | ||||||
Mfr: SIHG30N60E-GE3 TTI: SIHG30N60E-GE3 Vishay / Siliconix Availability: 10,000In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 10,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 29 A | 125 mOhms | 30 V | 4 V | 85 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: IRFR1N60ATRPBF-BE3 TTI: IRFR1N60ATRPBF-BE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO252 600V 1.4A N-CH MOSFET | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 1.4 A | 7 Ohms | 30 V | 4 V | 14 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | IRFR1N60ATRPBF | ||||
Mfr: SI2399DS-T1-BE3 TTI: SI2399DS-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SOT23 P-CH 20V 5.1A | 9,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 6 A | 34 mOhms | 12 V | 1.5 V | 10 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2399DS-T1-GE3 | ||||
Mfr: SIHF080N60E-GE3 TTI: SIHF080N60E-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 600V 14A E SERIES | 1,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 14 A | 80 mOhms | 30 V | 5 V | 42 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | |||||
Mfr: IRF9610PBF-BE3 TTI: IRF9610PBF-BE3 Vishay / Siliconix Availability: 5,950In StockMOSFETs TO220 200V 1.8A P-CH MOSFET | 5,950In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 1.8 A | 3 Ohms | 20 V | 4 V | 11 nC | - 55 C | + 150 C | 20 W | Enhancement | Tube | IRF9610PBF | ||||
Mfr: SISS67DN-T1-GE3 TTI: SISS67DN-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs -30V Vds 25V Vgs PowerPAK 1212-8S | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8S-8 | P-Channel | 1 Channel | 30 V | 60 A | 4.6 mOhms | 25 V | 2.5 V | 74 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI1036X-T1-GE3 TTI: SI1036X-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs 30V Vds 8V Vgs SC89-6 | 9,000In Stock | Si | SMD/SMT | SC-89-6 | N-Channel | 2 Channel | 30 V | 610 mA | 540 mOhms | 8 V | 400 mV | 2 nC | - 55 C | + 150 C | 220 mW | Enhancement | Reel |