Vishay / Siliconix - MOSFETs
3,859 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFL210TRPBF-BE3 TTI: IRFL210TRPBF-BE3 Vishay / Siliconix Availability: 5,000In StockMOSFETs SOT223 200V .96A N-CH MOSFET | 5,000In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 200 V | 960 mA | 1.5 Ohms | - 20 V, 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL210TRPBF | ||||
Mfr: IRF830APBF-BE3 TTI: IRF830APBF-BE3 Vishay / Siliconix Availability: 5,000In StockMOSFETs TO220 500V 5A N-CH MOSFET | 5,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 5 A | 1.4 Ohms | - 30 V, 30 V | 4.5 V | 24 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF830APBF | ||||
Mfr: IRF9620PBF-BE3 TTI: IRF9620PBF-BE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 200V 3.5A P-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 3.5 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 22 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | IRF9620PBF | ||||
Mfr: SIHB21N60EF-GE3 TTI: SIHB21N60EF-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 21 A | 176 mOhms | - 30 V, 30 V | 2 V | 84 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: SIHA22N60EL-GE3 TTI: SIHA22N60EL-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO220 600V 21A N-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 21 A | 197 mOhms | - 30 V, 30 V | 5 V | 37 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | |||||
Mfr: SIR122DP-T1-RE3 TTI: SIR122DP-T1-RE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 59.6 A | 7.4 mOhms | - 20 V, 20 V | 2 V | 44 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHP21N80AEF-GE3 TTI: SIHP21N80AEF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 800V 16.3A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 16.3 A | 250 mOhms | - 30 V, 30 V | 4 V | 71 nC | - 55 C | + 150 C | 179 W | Enhancement | TrenchFET | Bulk | ||||
Mfr: SI4850BDY-T1-GE3 TTI: SI4850BDY-T1-GE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs 60V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 11.3 A | 19.5 mOhms | - 20 V, 20 V | 2.8 V | 11.1 nC | - 55 C | + 150 C | 4.5 W | Enhancement | Reel | |||||
Mfr: SIR622DP-T1-RE3 TTI: SIR622DP-T1-RE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 150V Vds; 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 51.6 A | 17.7 mOhms | - 20 V, 20 V | 2.5 V | 41 nC | - 55 C | + 150 C | 104 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SI1441EDH-T1-BE3 TTI: SI1441EDH-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SOT363 P-CH 20V 4A | 9,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 4 A | 34 mOhms | - 10 V, 10 V | 1 V | 33 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1441EDH-T1-GE3 | |||
Mfr: SIRA88DP-T1-GE3 TTI: SIRA88DP-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 45.5 A | 5.4 mOhms | - 16 V, 20 V | 1.1 V | 25.5 nC | - 55 C | + 150 C | 25 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRF9620SPBF TTI: IRF9620SPBF Vishay / Siliconix Availability: 3,000In StockMOSFETs TO263 200V 3.5A P-CH MOSFET | 3,000In Stock | Si | TO-263-3 | Tube | ||||||||||||||||||
Mfr: SUP60020E-GE3 TTI: SUP60020E-GE3 Vishay / Siliconix Availability: 2,250In StockMOSFETs TO220 N-CH 80V 150A | 2,250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 150 A | 2.8 mOhms | - 20 V, 20 V | 2 V | 151.2 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Tube | ||||
Mfr: SIHG080N60E-GE3 TTI: SIHG080N60E-GE3 Vishay / Siliconix Availability: 500In StockMOSFETs TO247 600V 35A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 35 A | 80 mOhms | - 30 V, 30 V | 5 V | 42 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: IRF530PBF-BE3 TTI: IRF530PBF-BE3 Vishay / Siliconix Availability: 4,700In StockMOSFETs TO220 100V 14A N-CH MOSFET | 4,700In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | - 20 V, 20 V | 4 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF530PBF | ||||
Mfr: SIHP24N80AE-GE3 TTI: SIHP24N80AE-GE3 Vishay / Siliconix Availability: 5,000In StockMOSFETs N-CHANNEL 800V TO-220AB | 5,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 21 A | 160 mOhms | - 30 V, 30 V | 4 V | 59 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
Mfr: SIR158DP-T1-RE3 TTI: SIR158DP-T1-RE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 1.45 mOhms | - 20 V, 20 V | 1.2 V | 130 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI3483CDV-T1-BE3 TTI: SI3483CDV-T1-BE3 Vishay / Siliconix Availability: 33,000In StockMOSFETs TSOP6 P-CH 30V 6.1A | 33,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 34 mOhms | - 20 V, 20 V | 1 V | 11.5 nC | - 55 C | + 150 C | 4.2 W | Enhancement | Reel | SI3483CDV-T1-GE3 | ||||
Mfr: SIHP11N80AE-GE3 TTI: SIHP11N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs N-CHANNEL 800V TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 8 A | 391 mOhms | - 30 V, 30 V | 4 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | |||||
Mfr: SIR826LDP-T1-RE3 TTI: SIR826LDP-T1-RE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs PPAKSO8 N-CH 80V 21.3A | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 86 A | 4.15 mOhms | - 20 V, 20 V | 2.4 V | 60.5 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHP080N60E-GE3 TTI: SIHP080N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO220 600V 35A N-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 35 A | 80 mOhms | - 30 V, 30 V | 5 V | 42 nC | - 55 C | + 150 C | 227 W | Enhancement | Bulk | |||||
Mfr: SIHA24N80AE-GE3 TTI: SIHA24N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs N-CHANNEL 800V E Series Pwr MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 9 A | 184 mOhms | - 30 V, 30 V | 4 V | 59 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | |||||
Mfr: SUD50N04-8M8P-4BE3 TTI: SUD50N04-8M8P-4BE3 Vishay / Siliconix Availability: 20,000In StockMOSFETs N-CHANNEL 40V (D-S) | 20,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 50 A | 8 mOhms | - 20 V, 20 V | 3 V | 37 nC | - 55 C | + 150 C | 48.1 W | Enhancement | TrenchFET | Reel | SUD50N04-8M8P-4GE3 | |||
Mfr: SIHB21N80AE-GE3 TTI: SIHB21N80AE-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO263 800V 17.4A N-CH MOSFET | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 17.4 A | 205 mOhms | - 30 V, 30 V | 4 V | 48 nC | - 55 C | + 155 C | 32 W | Enhancement | Reel | |||||
Mfr: SIHP12N65E-GE3 TTI: SIHP12N65E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 650V Vds 30V Vgs TO-220AB | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 35 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube |