Vishay / Siliconix - MOSFETs
3,860 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHW47N60E-GE3 TTI: SIHW47N60E-GE3 Vishay / Siliconix Availability: 960In StockMOSFETs 600V Vds 30V Vgs TO-247AD | 960In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 65 mOhms | 30 V | 4 V | 152 nC | - 55 C | + 150 C | 379 W | Enhancement | Tube | |||||
Mfr: SIHB24N65EFT1-GE3 TTI: SIHB24N65EFT1-GE3 Vishay / Siliconix Availability: 2,400In StockMOSFETs TO263 650V 24A N-CH MOSFET | 2,400In Stock | Si | SMD/SMT | DPAK- | N-Channel | 1 Channel | 650 V | 24 A | 156 mOhms | 30 V | 4 V | 81 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||
Mfr: SIHJ7N65E-T1-GE3 TTI: SIHJ7N65E-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 650V Vds 30V Vgs PowerPAK SO-8L | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8L-4 | N-Channel | 1 Channel | 650 V | 7.9 A | 520 mOhms | 30 V | 4 V | 22 nC | - 55 C | + 150 C | 96 W | Enhancement | Reel | |||||
Mfr: SUP90142E-GE3 TTI: SUP90142E-GE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs 200V Vds 20V Vgs TO-220AB | 12,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 90 A | 12.6 mOhms | 20 V | 2 V | 87 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | |||||
Mfr: SIHB24N65E-GE3 TTI: SIHB24N65E-GE3 Vishay / Siliconix Availability: 1,650In StockMOSFETs 650V Vds 30V Vgs D2PAK (TO-263) | 1,650In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 700 V | 24 A | 145 mOhms | 30 V | 4 V | 81 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SI1424EDH-T1-BE3 TTI: SI1424EDH-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs SOT363 N-CH 20V 4A | 12,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 20 V | 4 A | 33 mOhms | 8 V | 1 V | 18 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1424EDH-T1-GE3 | |||
Mfr: SIHA11N80AE-GE3 TTI: SIHA11N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs N-CHANNEL 800V TO-220FP | 1,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 8 A | 391 mOhms | 30 V | 4 V | 42 nC | - 55 C | + 150 C | 31 W | Enhancement | Reel | |||||
Mfr: SI2366DS-T1-BE3 TTI: SI2366DS-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT23 N-CH 30V 4.5A | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 5.8 A | 36 mOhms | 20 V | 2.5 V | 3.2 nC | - 55 C | + 150 C | 2.1 W | Enhancement | Reel | SI2366DS-T1-GE3 | ||||
Mfr: IRF730APBF-BE3 TTI: IRF730APBF-BE3 Vishay / Siliconix Availability: 4,950In StockMOSFETs TO220 400V 5.5A N-CH MOSFET | 4,950In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | 30 V | 4.5 V | 22 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF730APBF | ||||
Mfr: SIHB100N60E-GE3 TTI: SIHB100N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs D2PAK (TO-263) | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 30 A | 100 mOhms | 30 V | 3 V | 50 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
Mfr: SUD23N06-31L-T4BE3 TTI: SUD23N06-31L-T4BE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs TO252 N-CH 60V 9.1A | 2,500In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 23 A | 31 mOhms | 20 V | 3 V | 11 nC | - 55 C | + 175 C | 100 W | Enhancement | Reel | SUD23N06-31L-T4-E3 | ||||
Mfr: SUD35N10-26P-BE3 TTI: SUD35N10-26P-BE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs TO252 100V 35A N-CH MOSFET | 4,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 35 A | 26 mOhms | 20 V | 4.4 V | 31 nC | - 55 C | + 175 C | 83 W | Enhancement | Reel | SUD35N10-26P-E3 | ||||
Mfr: SIHP17N80AE-GE3 TTI: SIHP17N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 800V 15A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 15 A | 250 mOhms | 30 V | 4 V | 41 nC | - 55 C | + 155 C | 179 W | Enhancement | Reel | |||||
Mfr: SI1480DH-T1-BE3 TTI: SI1480DH-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT363 100V 2.6A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.6 A | 200 mOhms | 20 V | 3 V | 5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI1480DH-T1-GE3 | |||
Mfr: SIHB15N60E-GE3 TTI: SIHB15N60E-GE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 4,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 15 A | 280 mOhms | 30 V | 4 V | 39 nC | - 55 C | + 150 C | 180 W | Enhancement | Tube | |||||
Mfr: SIHP22N60E-GE3 TTI: SIHP22N60E-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 3,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 21 A | 180 mOhms | 30 V | 4 V | 57 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: SIHG33N60EF-GE3 TTI: SIHG33N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 1,000In Stock | Si | Through Hole | TO-247AC-3 | Tube | |||||||||||||||||
Mfr: SIHA12N60E-E3 TTI: SIHA12N60E-E3 Vishay / Siliconix Availability: 2,050In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 2,050In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | 30 V | 4 V | 29 nC | - 55 C | + 150 C | 33 W | Enhancement | Tube | |||||
Mfr: SIHG24N65E-GE3 TTI: SIHG24N65E-GE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs 650V Vds 30V Vgs TO-247AC | 4,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | 30 V | 4 V | 81 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SIR870ADP-T1-RE3 TTI: SIR870ADP-T1-RE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 5.5 mOhms | 20 V | 1.5 V | 80 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS66DN-T1-GE3 TTI: SISS66DN-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs PPAK1212 N-CH 30V 49.1A | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 178.3 A | 1.38 mOhms | - 16 V, 20 V | 1 V | 57 nC | - 55 C | + 150 C | 65.8 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SIHP050N60E-GE3 TTI: SIHP050N60E-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 650V Vds 30V Vgs TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 51 A | 50 mOhms | 30 V | 5 V | 130 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | |||||
Mfr: SIHG64N65E-GE3 TTI: SIHG64N65E-GE3 Vishay / Siliconix Availability: 375In StockMOSFETs 650V Vds 30V Vgs TO-247AC | 375In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 64 A | 47 mOhms | 30 V | 4 V | 239 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | |||||
Mfr: SIHA105N60EF-GE3 TTI: SIHA105N60EF-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs E Series Pwr MOSFET w/Fast Body Diode | 2,000In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 29 A | 100 mOhms | 30 V | 5 V | 35 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | ||||||
Mfr: SIHA15N80AE-GE3 TTI: SIHA15N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 800V 6A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 6 A | 350 mOhms | 30 V | 4 V | 53 nC | - 55 C | + 150 C | 33 W | Enhancement | Reel |