Vishay / Siliconix - MOSFETs
3,852 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHG47N60EF-GE3 TTI: SIHG47N60EF-GE3 Vishay / Siliconix Availability: 350In StockMOSFETs RECOMMENDED ALT SIHW | 350In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 65 mOhms | - 30 V, 30 V | 2 V | 228 nC | - 55 C | + 150 C | 379 W | Enhancement | Tube | |||||
Mfr: IRFBF30PBF-BE3 TTI: IRFBF30PBF-BE3 Vishay / Siliconix Availability: 950In StockMOSFETs TO220 900V 3.6A N-CH MOSFET | 950In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 3.6 A | 3.7 Ohms | - 20 V, 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBF30PBF | ||||
Mfr: SI1401EDH-T1-BE3 TTI: SI1401EDH-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SOT363 P-CH 12V 4A | 9,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 12 V | 4 A | 34 mOhms | - 10 V, 10 V | 1 V | 36 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1401EDH-T1-GE3 | |||
Mfr: SI1416EDH-T1-BE3 TTI: SI1416EDH-T1-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs SOT363 N-CH 30V 3.9A | 3,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 30 V | 3.9 A | 58 mOhms | - 12 V, 12 V | 1.4 V | 12 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1416EDH-T1-GE3 | |||
Mfr: SIA537EDJ-T1-GE3 TTI: SIA537EDJ-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel, P-Channel | 2 Channel | 12 V, 20 V | 4.5 A | 23 mOhms, 44 mOhms | - 8 V, 8 V | 400 mV | 16 nC, 25 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHP30N60E-GE3 TTI: SIHP30N60E-GE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 4,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 29 A | 125 mOhms | - 30 V, 30 V | 2.8 V | 85 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SI1036X-T1-GE3 TTI: SI1036X-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs 30V Vds 8V Vgs SC89-6 | 9,000In Stock | Si | SMD/SMT | SC-89-6 | N-Channel | 2 Channel | 30 V | 610 mA | 540 mOhms | - 8 V, 8 V | 400 mV | 2 nC | - 55 C | + 150 C | 220 mW | Enhancement | Reel | |||||
Mfr: SIHB065N60E-GE3 TTI: SIHB065N60E-GE3 Vishay / Siliconix Availability: 300In StockMOSFETs 650V Vds; 30V Vgs D2PAK (TO-263) | 300In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 40 A | 65 mOhms | - 30 V, 30 V | 3 V | 74 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SI3493DDV-T1-GE3 TTI: SI3493DDV-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs -20V Vds 8V Vgs TSOP-6 | 9,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 20 mOhms | - 8 V, 8 V | 1 V | 52.2 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | |||||
Mfr: IRF9540PBF-BE3 TTI: IRF9540PBF-BE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO220 100V 19A P-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 19 A | 200 mOhms | - 20 V, 20 V | 4 V | 61 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRF9540PBF | ||||
Mfr: SIR878BDP-T1-RE3 TTI: SIR878BDP-T1-RE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 42.5 A | 12 mOhms | - 20 V, 20 V | 2 V | 24.8 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7155DP-T1-GE3 TTI: SI7155DP-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs -40V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 40 V | 100 A | 3.6 mOhms | - 20 V, 20 V | 2.3 V | 220 nC | - 55 C | + 150 C | 104 W | Enhancement | Reel | |||||
Mfr: SIHFR9310TRL-GE3 TTI: SIHFR9310TRL-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO252 400V 1.8A P-CH MOSFET | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | Reel | |||||||||||||||||
Mfr: IRF720PBF-BE3 TTI: IRF720PBF-BE3 Vishay / Siliconix Availability: 4,850In StockMOSFETs TO220 400V 3.3A N-CH MOSFET | 4,850In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 3.3 A | 1.8 Ohms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF720PBF | ||||
Mfr: SI3443CDV-T1-BE3 TTI: SI3443CDV-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs TSOP6 P-CH 20V 4.7A | 12,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 5.97 A | 100 mOhms | - 12 V, 12 V | 1.5 V | 7.53 nC | - 55 C | + 150 C | 3.2 W | Enhancement | Reel | SI3443CDV-T1-GE3 | ||||
Mfr: SI2300DS-T1-BE3 TTI: SI2300DS-T1-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs SOT23 N-CH 30V 3.1A | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 68 mOhms | - 12 V, 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2300DS-T1-GE3 | ||||
Mfr: SI2343CDS-T1-BE3 TTI: SI2343CDS-T1-BE3 Vishay / Siliconix Availability: 30,000In StockMOSFETs SOT23 P-CH 30V 4.2A | 30,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 5.9 A | 45 mOhms | - 20 V, 20 V | 2.5 V | 7 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2343CDS-T1-GE3 | ||||
Mfr: SIR668ADP-T1-RE3 TTI: SIR668ADP-T1-RE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 93.6 A | 4 mOhms | - 20 V, 20 V | 4 V | 54 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHB24N80AE-GE3 TTI: SIHB24N80AE-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs N-CHANNEL 800V E Series Pwr MOSFET | 3,000In Stock | Si | SMD/SMT | TO-263-4 | N-Channel | 1 Channel | 800 V | 21 A | 184 mOhms | - 30 V, 30 V | 4 V | 59 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
Mfr: SI3407DV-T1-BE3 TTI: SI3407DV-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs TSOP6 P-CH 20V 7.5A | 6,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 32.7 mOhms | - 12 V, 12 V | 1.5 V | 21 nC | - 55 C | + 150 C | 4.2 W | Enhancement | Reel | SI3407DV-T1-GE3 | ||||
Mfr: SUD50P06-15-BE3 TTI: SUD50P06-15-BE3 Vishay / Siliconix Availability: 16,000In StockMOSFETs P-CHANNEL 60V (D-S) | 16,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 15 mOhms | - 20 V, 20 V | 3 V | 110 nC | - 55 C | + 175 C | 113 W | Enhancement | TrenchFET | Reel | SUD50P06-15-GE3 | |||
Mfr: IRF630PBF-BE3 TTI: IRF630PBF-BE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs TO220 200V 9A N-CH MOSFET | 2,500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9 A | 400 mOhms | - 20 V, 20 V | 4 V | 43 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF630PBF | ||||
Mfr: IRFR024TRPBF-BE3 TTI: IRFR024TRPBF-BE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO252 N-CH 60V 14A | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 14 A | 100 mOhms | - 20 V, 20 V | 4 V | 25 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | IRFR024TRPBF | ||||
Mfr: SI2301CDS-T1-BE3 TTI: SI2301CDS-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT23 P-CH 20V 2.3A | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.1 A | 112 mOhms | - 8 V, 8 V | 1 V | 3.3 nC | - 55 C | + 150 C | 1.6 W | Enhancement | Reel | SI2301CDS-T1-GE3 | ||||
Mfr: SIHP22N60AE-BE3 TTI: SIHP22N60AE-BE3 Vishay / Siliconix Availability: 2,750In StockMOSFETs TO220 600V 20A N-CH MOSFET | 2,750In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 20 A | 156 mOhms | - 30 V, 30 V | 4 V | 96 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | SIHP22N60AE-GE3 |
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