Vishay / Siliconix - MOSFETs
3,872 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRF740PBF-BE3 TTI: IRF740PBF-BE3 Vishay / Siliconix Availability: 7,000In StockMOSFETs TO220 400V 10A N-CH MOSFET | 7,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740PBF | ||||
Mfr: SIR5108DP-T1-RE3 TTI: SIR5108DP-T1-RE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SO8 100V 55.9A N CHAN | 6,000In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 100 V | 55.9 A | 10.5 mOhms | 20 V | 4 V | 14.8 nC | - 55 C | + 150 C | 65.7 W | Enhancement | Reel | |||||
Mfr: IRF9640PBF-BE3 TTI: IRF9640PBF-BE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs TO220 200V 11A P-CH MOSFET | 4,000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF9640PBF | ||||
Mfr: SUM110P08-11L-E3 TTI: SUM110P08-11L-E3 Vishay / Siliconix Availability: 4,000In StockMOSFETs 80V 110A 375W | 4,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 80 V | 110 A | 11.2 mOhms | 20 V | 1 V | 180 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHFR9310TRL-GE3 TTI: SIHFR9310TRL-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO252 400V 1.8A P-CH MOSFET | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | Reel | |||||||||||||||||
Mfr: SI3474DV-T1-BE3 TTI: SI3474DV-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs TSOP6 100V 3.8A N-CH MOSFET | 9,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 100 V | 3.8 A | 126 mOhms | 20 V | 1.2 V | 2.9 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | SI3474DV-T1-GE3 | ||||
Mfr: IRF630PBF-BE3 TTI: IRF630PBF-BE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs TO220 200V 9A N-CH MOSFET | 2,500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9 A | 400 mOhms | 20 V | 4 V | 43 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF630PBF | ||||
Mfr: SIHG17N80AE-GE3 TTI: SIHG17N80AE-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO247 800V 15A N-CH MOSFET | 3,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 15 A | 250 mOhms | 30 V | 4 V | 41 nC | - 55 C | + 155 C | 179 W | Enhancement | Reel | |||||
Mfr: SIHP22N60AE-BE3 TTI: SIHP22N60AE-BE3 Vishay / Siliconix Availability: 2,750In StockMOSFETs TO220 600V 20A N-CH MOSFET | 2,750In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 20 A | 156 mOhms | 30 V | 4 V | 96 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | SIHP22N60AE-GE3 | ||||
Mfr: SI2300DS-T1-BE3 TTI: SI2300DS-T1-BE3 Vishay / Siliconix Availability: 12,000In Stock3,000 On Order Expected 15-Dec-26 MOSFETs SOT23 N-CH 30V 3.1A | 12,000In Stock3,000 On Order Expected 15-Dec-26 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 68 mOhms | 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2300DS-T1-GE3 | ||||
Mfr: SI2343CDS-T1-BE3 TTI: SI2343CDS-T1-BE3 Vishay / Siliconix Availability: 30,000In StockMOSFETs SOT23 P-CH 30V 4.2A | 30,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 5.9 A | 45 mOhms | 20 V | 2.5 V | 7 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2343CDS-T1-GE3 | ||||
Mfr: IRL510PBF-BE3 TTI: IRL510PBF-BE3 Vishay / Siliconix Availability: 200In StockMOSFETs TO220 100V 5.6A N-CH MOSFET | 200In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 10 V | 2 V | 6.1 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRL510PBF | ||||
Mfr: SIA462DJ-T1-GE3 TTI: SIA462DJ-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 30 V | 12 A | 18 mOhms | 20 V | 1.2 V | 17 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRF840APBF-BE3 TTI: IRF840APBF-BE3 Vishay / Siliconix Availability: 1,600In StockMOSFETs TO220 500V 8A N-CH MOSFET | 1,600In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 4 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840APBF | ||||
Mfr: SI2342DS-T1-BE3 TTI: SI2342DS-T1-BE3 Vishay / Siliconix Availability: 27,000In StockMOSFETs SOT23 N-CH 8V 6A | 27,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 8 V | 6 A | 17 mOhms | 5 V | 800 mV | 6 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2342DS-T1-GE3 | ||||
Mfr: SIHB33N60E-GE3 TTI: SIHB33N60E-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 3,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 33 A | 99 mOhms | 30 V | 4 V | 100 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | |||||
Mfr: SI2302DDS-T1-BE3 TTI: SI2302DDS-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs SOT23 N-CH 20V 2.6A | 12,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | Reel | SI2302DDS-T1-GE3 | ||||
Mfr: TN2404K-T1-GE3 TTI: TN2404K-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 240V 0.2A 0.36W 4.0ohms @ 10V | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 257 V | 200 mA | 2.2 Ohms | 20 V | 1.65 V | 4.87 nC | - 55 C | + 150 C | 360 mW | Enhancement | TrenchFET | Reel | TN2404K-GE3 | |||
Mfr: IRF510PBF-BE3 TTI: IRF510PBF-BE3 Vishay / Siliconix Availability: 10,000In StockMOSFETs TO220 100V 5.6A N-CH MOSFET | 10,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF | ||||
Mfr: SISH892BDN-T1-GE3 TTI: SISH892BDN-T1-GE3 Vishay / Siliconix Availability: 21,000In StockMOSFETs PWRPK 100V 20A N-CH MOSFET | 21,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 20 A | 30.4 mOhms | 20 V | 2.4 V | 17.4 nC | - 55 C | + 150 C | 29 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHG25N50E-GE3 TTI: SIHG25N50E-GE3 Vishay / Siliconix Availability: 500In Stock1,500 On Order Expected 23-Nov-26 MOSFETs 500V Vds 30V Vgs TO-247AC | 500In Stock1,500 On Order Expected 23-Nov-26 | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 500 V | 26 A | 145 mOhms | 30 V | 4 V | 57 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||
Mfr: SIHB6N65E-GE3 TTI: SIHB6N65E-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 650V Vds 30V Vgs D2PAK (TO-263) | 1,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 7 A | 600 mOhms | 30 V | 4 V | 24 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | |||||
Mfr: SIHP28N60EF-GE3 TTI: SIHP28N60EF-GE3 Vishay / Siliconix Availability: 8,050In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 8,050In Stock | Si | Through Hole | TO-220-3 | Tube | |||||||||||||||||
Mfr: SIHD12N50E-GE3 TTI: SIHD12N50E-GE3 Vishay / Siliconix Availability: 2,550In StockMOSFETs 500V Vds 30V Vgs DPAK (TO-252) | 2,550In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 10.5 A | 380 mOhms | 30 V | 4 V | 25 nC | - 55 C | + 150 C | 114 W | Enhancement | Tube | |||||
Mfr: SIDR402DP-T1-GE3 TTI: SIDR402DP-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8DC | 9,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 100 A | 1.16 mOhms | - 16 V, 20 V | 2.3 V | 53 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel |