Vishay / Siliconix - MOSFETs
3,852 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRL640PBF-BE3 TTI: IRL640PBF-BE3 Vishay / Siliconix Availability: 0In Stock2,000 On Order Expected 01-Sep-27 MOSFETs TO220 200V 17A N-CH MOSFET | 0In Stock2,000 On Order Expected 01-Sep-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 17 A | 180 mOhms | - 10 V, 10 V | 2 V | 66 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRL640PBF | ||||
Mfr: SI2328DS-T1-BE3 TTI: SI2328DS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT233 100V 1.15A N-CH MOSFET | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 1.15 A | 250 mOhms | - 20 V, 20 V | 4 V | 3.3 nC | - 55 C | + 150 C | 730 mW | Enhancement | Reel | SI2328DS-T1-E3 | ||||
Mfr: IRF9640PBF-BE3 TTI: IRF9640PBF-BE3 Vishay / Siliconix Availability: 0In Stock4,000 On Order Expected 10-Nov-26 MOSFETs TO220 200V 11A P-CH MOSFET | 0In Stock4,000 On Order Expected 10-Nov-26 | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | - 20 V, 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF9640PBF | ||||
Mfr: SIR5108DP-T1-RE3 TTI: SIR5108DP-T1-RE3 Vishay / Siliconix Availability: 0In Stock15,000 On Order Expected 29-Jun-27 MOSFETs SO8 100V 55.9A N CHAN | 0In Stock15,000 On Order Expected 29-Jun-27 | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 100 V | 55.9 A | 10.5 mOhms | - 20 V, 20 V | 4 V | 14.8 nC | - 55 C | + 150 C | 65.7 W | Enhancement | Reel | |||||
Mfr: IRFBE20PBF-BE3 TTI: IRFBE20PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 800V 1.8A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 1.8 A | 6.5 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | IRFBE20PBF | ||||
Mfr: SIHLL110TR-GE3 TTI: SIHLL110TR-GE3 Vishay / Siliconix Availability: 0In Stock2,500 On Order Expected 15-Jul-27 MOSFETs 100V Vds 20V Vgs SOT-223 | 0In Stock2,500 On Order Expected 15-Jul-27 | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | - 10 V, 10 V | 1 V | 6.1 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | |||||
Mfr: IRLL110TRPBF-BE3 TTI: IRLL110TRPBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT223 100V 1.5A N-CH MOSFET | 0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | - 10 V, 10 V | 2 V | 6.1 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRLL110TRPBF | ||||
Mfr: SISH536DN-T1-GE3 TTI: SISH536DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs PPAK1212 N-CH 30V 24.7A | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 30 V | 67.4 A | 3.25 mOhms | - 12 V, 16 V | 2.2 V | 16.6 nC | - 55 C | + 150 C | 26.5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR500DP-T1-RE3 TTI: SIR500DP-T1-RE3 Vishay / Siliconix Availability: 0In Stock6,000 On Order Expected 17-Aug-27 MOSFETs PPAKSO8 N-CH 30V 85.9A | 0In Stock6,000 On Order Expected 17-Aug-27 | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 350.8 A | 470 uOhms | - 12 V, 16 V | 2.2 V | 120 nC | - 55 C | + 150 C | 104.1 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFR9220TRPBF-BE3 TTI: IRFR9220TRPBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO252 200V 3.6A P-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 200 V | 3.6 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR9220TRPBF | ||||
Mfr: SIR871DP-T1-GE3 TTI: SIR871DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -100V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 100 V | 48 A | 28 mOhms | - 20 V, 20 V | 1.2 V | 90 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHB17N80E-T1-GE3 TTI: SIHB17N80E-T1-GE3 Vishay / Siliconix Availability: 0In Stock6,400 On Order Expected 30-Oct-26 MOSFETs E Series Power | 0In Stock6,400 On Order Expected 30-Oct-26 | Si | SMD/SMT | N-Channel | 1 Channel | 800 V | 15 A | 290 mOhms | - 30 V, 30 V | 2 V | 122 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | ||||||
Mfr: SUD19N20-90-BE3 TTI: SUD19N20-90-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CHANNEL 200V (D-S | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 19 A | 90 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD19N20-90-E3 | |||
Mfr: SI3127DV-T1-GE3 TTI: SI3127DV-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -60V Vds 20V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 60 V | 5.1 A | 146 mOhms | - 20 V, 20 V | 3 V | 30 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SQJB40EP-T1-GE3 TTI: SQJB40EP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs PPAKSO8 2NCH 40V 30A | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: SQM100P10-19L-GE3 TTI: SQM100P10-19L-GE3 Vishay / Siliconix Availability: 0In Stock1,600 On Order Expected 28-Apr-27 MOSFETs TO263 100V 93A P-CH MOSFET | 0In Stock1,600 On Order Expected 28-Apr-27 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | Reel | |||||||||||||||||
Mfr: SQD40P10-40L GE3 TTI: SQD40P10-40L-GE3 Vishay / Siliconix Availability: 0In Stock14,000 On Order Expected 09-Oct-26 MOSFETs RECOMMENDED ALT SQD4 | 0In Stock14,000 On Order Expected 09-Oct-26 | Si | SMD/SMT | DPAK-3 (TO-252-3) | AEC-Q100 | TrenchFET | Reel | |||||||||||||||
Mfr: IRFL9014TRPBF-BE3 TTI: IRFL9014TRPBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT223 P-CH 60V 1.8A | 0In Stock | Si | SMD/SMT | SOT-223-4 | P-Channel | 1 Channel | 60 V | 1.8 A | 500 mOhms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRFL9014TRPBF | ||||
Mfr: SIHB33N60E-GE3 TTI: SIHB33N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 33 A | 99 mOhms | - 30 V, 30 V | 4 V | 100 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | |||||
Mfr: SI3473DDV-T1-GE3 TTI: SI3473DDV-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -12V Vds 8V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 12 V | 8 A | 38.8 mOhms | - 8 V, 8 V | 1 V | 38 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | |||||
Mfr: SIHG186N60EF-GE3 TTI: SIHG186N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO247 600V 8.4A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 8.4 A | 168 mOhms | - 30 V, 30 V | 5 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
Mfr: SIS128LDN-T1-GE3 TTI: SIS128LDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs PPAK1212 N-CH 80V 10.2A | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 33.7 A | 20.3 mOhms | - 20 V, 20 V | 1 V | 20 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHF530STRL-GE3 TTI: SIHF530STRL-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs TO-220AB | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | - 20 V, 20 V | 2 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | |||||
Mfr: SIHP052N60EF-GE3 TTI: SIHP052N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs EF Series Pwr MOSFET w/Fast Body Diode | 0In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 48 A | 52 mOhms | - 30 V, 30 V | 5 V | 67 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | ||||||
Mfr: SI1442DH-T1-BE3 TTI: SI1442DH-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT363 N-CH 12V 4A | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 12 V | 4 A | 20 mOhms | - 8 V, 8 V | 1 V | 33 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1442DH-T1-GE3 |
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