Vishay - MOSFETs
1,580 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: SIR514DP-T1-RE3 TTI: SIR514DP-T1-RE3 Vishay Availability: 0In StockMOSFETs SOT669 100V 84.8A N-CH MOSFET | 0In Stock | Si | Reel | ||||||||||||||||||
0In Stock | Si | SMD/SMT | PowerPAK-10 x12 | N-Channel | 1 Channel | 650 V | 16 A | 168 mOhms | - 10 V, 10 V | 5 V | 32 nC | - 55 C | + 150 C | Enhancement | PowerPAK | ||||||
0In Stock | Si | SMD/SMT | 6x5F | N-Channel, NPN | 2 Channel | 30 V | 105 A, 257 A | 2.1 mOhms, 9 mOhms | - 16 V, 20 V | 2.2 V | 11 nC, 38 nC | - 55 C | + 150 C | 83 W | |||||||
0In Stock | Si | SMD/SMT | PowerPAK-8 | N-Channel | 1 Channel | 650 V | 50 A | 85 mOhms | 30 V | 5 V | 63 nC | - 55 C | + 150 C | 184 W | Enhancement | ||||||
0In Stock | Si | SMD/SMT | TO-263 | N-Channel | 1 Channel | 800 V | 5 A | 826 mOhms | - 10 V, 10 V | 2 V | 22.5 nC | - 55 C | + 150 C | 78 W | Enhancement | ||||||
0In Stock | Si | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 40 A | 65 mOhms | 30 V | 5 V | 132 nC | - 55 C | + 150 C | 250 W | Enhancement | ||||||
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0In Stock | Si | Through Hole | TO-220AB-3 | N-Channel | 1 Channel | 650 V | 40 A | 65 mOhms | 30 V | 5 V | 132 nC | - 55 C | + 150 C | 250 W | Enhancement | ||||||
0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 650 V | 35 A | 79 mOhms | 30 V | 5 V | 80 nC | - 55 C | + 150 C | 250 W | Enhancement | ||||||
0In Stock | Si | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 600 V | 12 A | 240 mOhms | - 30 V, 30 V | 5 V | 15 nC | - 55 C | + 150 C | 89 W | Enhancement | ||||||
0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 100 V | 1.78 A | 160 mOhms | - 20 V, 20 V | 4 V | 3.8 nC | - 55 C | + 150 C | 1.34 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | - 55 C | ||||||||||||||||
0In Stock | Si | SMD/SMT | PowerPAK 8 x 8 | N-Channel | 1 Channel | 650 V | 17 A | 190 mOhms | - 30 V, 30 V | 5 V | 33 nC | - 55 C | + 150 C | 130 W | Enhancement | Vishay | Reel | ||||
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0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 35 A | 79 mOhms | 30 V | 5 V | 80 nC | - 55 C | + 150 C | 250 W | Enhancement | ||||||
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0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 6 A | - 20 V, 20 V | 1.5 V | - 55 C | + 175 C | 27.8 W | Enhancement | Reel | ||||||||
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Mfr: SIHB155N60EF-GE3 TTI: Not Assigned Vishay Availability: 0In StockMOSFETs EF Series Power MOSFET D2PAK | 0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 600 V | 21 A | 159 mOhms | - 30 V, 30 V | 5 V | 25 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | ||||
0In Stock | Si | SMD/SMT | PowerPAK 8 x 8 | N-Channel | 1 Channel | 650 V | 14 A | 240 mOhms | - 30 V, 30 V | 5 V | 29 nC | - 55 C | + 150 C | 114 W | Enhancement | Vishay | Reel | ||||
0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | SMD/SMT | SO-8SW | N-Channel | 1 Channel | 150 V | 93 A | 8.6 mOhms | - 20 V, 20 V | 4 V | 25.7 nC | - 55 C | 6.9 W |
