Toshiba - MOSFETs
3,411 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SSM6N357R,LF TTI: SSM6N357R,LF Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=.65A VDSS=60V | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 2 Channel | 60 V | 650 mA | 1.8 Ohms | 12 V | 1.3 V | 1.5 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | MOSV | Reel | |||
0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 60 V | 105 A | 4.8 mOhms | 20 V | 1.5 V | 29 nC | - 55 C | + 175 C | 104 W | Enhancement | U-MOSIX-H | Reel | |||||
Mfr: XPH6R30ANB,L1XHQ TTI: XPH6R30ANB,L1XHQ Toshiba Availability: 0In StockMOSFETs PD=132W F=1MHZ AEC-Q101 | 0In Stock | Si | SMD/SMT | SOP-Advance-8 | N-Channel | 1 Channel | 100 V | 45 A | 6.3 mOhms | 20 V | 3.5 V | 52 nC | - 55 C | + 175 C | 132 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: TK33S10N1Z,LQ TTI: TK33S10N1Z,LQ Toshiba Availability: 0In StockMOSFETs UMOSVIII 100V 10m max(VGS=10V) DPAK | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 33 A | 9.7 mOhms | 20 V | 2 V | 28 nC | - 55 C | + 175 C | 125 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
Mfr: TK62N60X,S1F TTI: TK62N60X,S1F Toshiba Availability: 0In StockMOSFETs DTMOSIV-High Speed 600V 40mOhmmax | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 61.8 A | 33 mOhms | 30 V | 3.5 V | 135 nC | - 55 C | + 150 C | 400 W | Enhancement | DTMOSIV-H | Tube | ||||
Mfr: SSM3J15FV,L3F TTI: SSM3J15FV,L3F Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET High Speed Switching | 0In Stock | Si | SMD/SMT | VESM-3 | P-Channel | 1 Channel | 30 V | 100 mA | 12 Ohms | 20 V | 1.1 V | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSVI | Reel | |||||
0In Stock | Si | SMD/SMT | L-TOGL-9 | N-Channel | 1 Channel | 40 V | 400 A | 470 uOhms | 20 V | 3 V | 295 nC | + 175 C | 750 W | Enhancement | Reel | |||||||
Mfr: SSM6N58NU,LF TTI: SSM6N58NU,LF Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 4A 30V 2-in-1 | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 2 Channel | 30 V | 4 A | 112 mOhms | 12 V | 1 V | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel | |||||
Mfr: TPH12008NH,L1Q TTI: TPH12008NH,L1Q Toshiba Availability: 0In StockMOSFETs N-Ch 80V 1490pF 22nC 12.3mOhm 44A 48W | 0In Stock | Si | N-Channel | 1 Channel | U-MOSVIII-H | Reel | ||||||||||||||||
Mfr: TK1K2A60F,S4X TTI: TK1K2A60F,S4X Toshiba Availability: 0In StockMOSFETs N-Ch TT-MOSIX 600V 35W 740pF 6A | 0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 600 V | 6 A | 1.2 Ohms | 30 V | 2 V | 21 nC | + 150 C | 35 W | Enhancement | MOSIX | Tube | |||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 150 V | 49 A | 9.7 mOhms | 20 V | 4.5 V | 50 nC | - 55 C | + 175 C | 45 W | Enhancement | Tube | ||||||
Mfr: TPH11006NL,LQ TTI: TPH11006NL,LQ Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 60V 40A 23nC MOSFET | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 40 A | 17 mOhms | 20 V | 2.5 V | 23 nC | - 55 C | + 150 C | 34 W | Enhancement | U-MOSVIII-H | Reel | TPH11006NL,LQ(S | |||
0In Stock | Si | SMD/SMT | DPAK-2 (TO-252-2) | N-Channel | 1 Channel | 80 V | 84 A | 5.1 mOhms | 20 V | 3.5 V | 56 nC | + 175 C | 104 W | Enhancement | Reel | TK5R1P08QM,RQ(S2 | ||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 92 A | 6 mOhms | 20 V | 1.4 V | 27 nC | - 55 C | + 175 C | 81 W | Enhancement | U-MOSIX-H | Reel | |||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 250 V | 26 A | 44 mOhms | 20 V | 2 V | 22 nC | - 55 C | + 150 C | 78 W | Enhancement | U-MOSVIII-H | Reel | |||||
Mfr: SSM3J358R,LF TTI: SSM3J358R,LF Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-6A VDSS=-20V | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 6 A | 17.5 mOhms | 10 V | 1 V | 38.5 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVII | Reel | ||||
Mfr: TK3R2A10PL,S4X TTI: TK3R2A10PL,S4X Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=54W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 100 A | 4.3 mOhms | 20 V | 2.5 V | 161 nC | - 55 C | + 175 C | 54 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: TPW1R104PB,L1XHQ TTI: TPW1R104PB,L1XHQ Toshiba Availability: 0In StockMOSFETs 132W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DSOP-Advance-8 | N-Channel | 1 Channel | 40 V | 120 A | 1.14 mOhms | 20 V | 3 V | 55 nC | - 55 C | + 175 C | 132 W | Enhancement | AEC-Q101 | Reel | TPW1R104PB,L1XHQ(O | |||
Mfr: XPN9R614MC,L1XHQ TTI: XPN9R614MC,L1XHQ Toshiba Availability: 0In StockMOSFETs 100W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TSON-Advance-8 | P-Channel | 1 Channel | 40 V | 40 A | 9.6 mOhms | - 20 V, 10 V | 2.1 V | 64 nC | - 55 C | + 175 C | 100 W | Enhancement | AEC-Q101 | Reel | XPN9R614MC,L1XHQ(O | |||
Mfr: XPH4R10ANB,L1XHQ TTI: XPH4R10ANB,L1XHQ Toshiba Availability: 0In StockMOSFETs PD=170W F=1MHZ AEC-Q101 | 0In Stock | Si | SMD/SMT | SOP-Advance-8 | N-Channel | 1 Channel | 100 V | 70 A | 4.1 mOhms | 20 V | 3.5 V | 75 nC | - 55 C | + 175 C | 170 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: TK110E65Z,S1X TTI: TK110E65Z,S1X Toshiba Availability: 0In StockMOSFETs 650V DTMOS VI TO-220 110MOHM | 0In Stock | Si | 650 V | 24 A | 92 mOhms | 30 V | 4 V | 40 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 52 A | 9.6 mOhms | 20 V | 4.5 V | 50 nC | - 55 C | + 175 C | 200 W | Enhancement | Tube | ||||||
Mfr: SSM3J334R,LF TTI: SSM3J334R,LF Toshiba Availability: 0In StockMOSFETs P-Ch U-MOSVI FET ID -4A -30VDSS 280pF | 0In Stock | Si | P-Channel | 1 Channel | U-MOSVI | Reel | ||||||||||||||||
0In Stock | Si | SMD/SMT | CST3-3 | P-Channel | 1 Channel | 20 V | 1.4 A | 4 Ohms | 8 V | 1 V | 1.6 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | |||||
Mfr: TPH4R50ANH1,LQ TTI: TPH4R50ANH1,LQ Toshiba Availability: 0In StockMOSFETs UMOS8 SOP-ADV(N) 100V 4.5mohm | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 100 V | 92 A | 4.5 mOhms | 20 V | 4 V | 58 nC | + 150 C | 170 W | Enhancement | Reel |