Toshiba - MOSFETs
3,378 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: TK12A50D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 12A 500V 45W 1350pF 0.52 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 12 A | 520 mOhms | - 30 V, 30 V | 2 V | 25 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | |||
Mfr: TK7J90E,S1E TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PLN MOS 900V 2000m (VGS=10V) TO-3PN | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 900 V | 7 A | 1.6 Ohms | - 30 V, 30 V | 4 V | 32 nC | - 55 C | + 150 C | 200 W | Enhancement | MOSVIII | Tray | |||
Mfr: SSM6H19NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UDFN6 S-MOS TRSTR Pd: 0.5W F: 1MHz | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel, SBD | 1 Channel | 40 V | 2 A | 160 mOhms | - 12 V, 12 V | 500 mV | 2.2 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | ||||
Mfr: SSM3K72KFS,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=.3A VDSS=60V | 0In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 60 V | 300 mA | 1.05 Ohms | - 20 V, 20 V | 1.1 V | 600 pC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | ||
0In Stock | Si | SMD/SMT | SOP-8 | P-Channel | 1 Channel | 30 V | 45 A | 4 mOhms | - 25 V, 20 V | 2 V | 190 nC | + 150 C | 45 W | Enhancement | |||||||
Mfr: SSM3J356R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P Channel -60V -2A AECQ MOSFET | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 60 V | 2 A | 360 mOhms | - 20 V, 10 V | 2 V | 8.3 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7 A | 48 mOhms | - 20 V, 20 V | 4 V | 7.1 nC | - 55 C | + 175 C | 50 W | Enhancement | AEC-Q101 | Reel | ||||
0In Stock | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 40 V | 80 A | 2.3 mOhms | - 20 V, 20 V | 1.4 V | 41 nC | - 55 C | + 175 C | 104 W | Enhancement | U-MOSIX-H | Reel | ||||
0In Stock | Si | SMD/SMT | VESM-3 | P-Channel | 1 Channel | 20 V | 800 mA | 4 Ohms | - 8 V, 6 V | 1 V | 1.6 nC | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q101 | U-MOSVI | Reel | |||
0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 30 V | 2 A | 93 mOhms | - 12 V, 12 V | 1 V | 1.5 nC | - 55 C | + 150 C | 800 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | |||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 5.5 A | 29.8 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | |||
Mfr: SSM6J512NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET Vdss=-12V, Id=-10A | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 12 V | 10 A | 40.1 mOhms | - 10 V, 10 V | 1 V | 19.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | U-MOSVII | Reel | |||
Mfr: SSM3K116TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET High Speed Switching | 0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 30 V | 2.2 A | 100 mOhms | - 12 V, 12 V | 500 mV | - 55 C | + 150 C | 800 mW | Enhancement | AEC-Q101 | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 650 V | 5.8 A | 890 mOhms | - 30 V, 30 V | 2.5 V | 11 nC | - 55 C | + 150 C | 60 W | Enhancement | DTMOSIV | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 9.3 A | 430 mOhms | - 30 V, 30 V | 2.5 V | 20 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK17A80W,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 2050pF 32nC 17A 45W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 17 A | 250 mOhms | - 20 V, 20 V | 3 V | 32 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | |||
Mfr: SSM3K2615TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=2A VDSS=60V | 0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 60 V | 2 A | 300 mOhms | - 20 V, 20 V | 800 mV | 6 nC | + 150 C | 1.6 W | Enhancement | AEC-Q101 | MOSV | Reel | |||
Mfr: TK46E08N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V N-Ch PWR FET 80A 103W 37nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 80 A | 8.4 mOhms | - 20 V, 20 V | 37 nC | 103 W | U-MOSVIII-H | Tube | |||||||
Mfr: TK3A65DA(STA4,QM) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 2.5A 650V 35W 490pF 2.51 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 650 V | 2.5 A | 2.51 Ohms | 35 W | MOSVII | Tube | |||||||||
Mfr: TK6A55DA(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 5.5A 550V 35W 600pF 1.48 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 550 V | 5.5 A | 1.48 Ohms | 35 W | MOSVII | Tube | |||||||||
Mfr: TK11A45D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 10A 40V 25W 410pF 0.029 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 450 V | 11 A | 500 mOhms | - 30 V, 30 V | 2 V | 20 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSVII | Tube | |||
Mfr: TK39J60W5,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 38.8A 270W FET 600V 4100pF 135nC | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 38.8 A | 55 mOhms | - 30 V, 30 V | 3.7 V | 110 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSIV | Tube | |||
Mfr: TK32E12N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 60A 98W FET 120V 2000pF 34nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 120 V | 60 A | 11 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 150 C | 98 W | Enhancement | U-MOSVIII-H | Tube | |||
Mfr: TK5P50D(T6RSS-Q) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 5A 500V 80W 490pF 1.5 Ohm | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 5 A | 1.3 Ohms | - 30 V, 30 V | 4.4 V | 11 nC | - 55 C | + 150 C | 80 W | Enhancement | MOSVII | Reel | |||
Mfr: TK7E80W,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 700pF 13nC 6.5A 110W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 6.5 A | 795 mOhms | - 20 V, 20 V | 3 V | 13 nC | - 55 C | + 150 C | 110 W | Enhancement | DTMOSIV | Tube |
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