Toshiba - MOSFETs
3,378 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 1 Channel | 30 V | 1.9 A | 133 mOhms | - 12 V, 12 V | 1 V | 1.9 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSIII | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 25 A | 99 mOhms | 30 V | 36 nC | + 150 C | 176 W | Enhancement | Tube | ||||||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 20 V | 4 A | 42.7 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | UF-6 | N-Channel | 1 Channel | 30 V | 500 mA | 145 mOhms | - 12 V, 12 V | 1.1 V | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | |||||
Mfr: SSM5N16FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=0.1A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-353-5 | N-Channel | 2 Channel | 20 V | 100 mA | 3 Ohms | - 10 V, 10 V | 600 mV | + 150 C | 200 mW | Enhancement | MOSVI | Reel | ||||||
0In Stock | Si | SMD/SMT | TSOP-6F | N-Channel | 1 Channel | 60 V | 6 A | 36 mOhms | - 20 V, 20 V | 2.5 V | 9.3 nC | + 175 C | 3 W | Enhancement | AEC-Q101 | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 18.5 A | 190 mOhms | - 30 V, 30 V | 2.7 V | 38 nC | - 55 C | + 150 C | 40 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 4 A | 1.7 Ohms | - 30 V, 30 V | 2.4 V | 12 nC | - 55 C | + 150 C | 100 W | Enhancement | MOSVII | Reel | |||||
Mfr: TJ10S04M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 27W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 10 A | 44 mOhms | - 20 V, 10 V | 3 V | 19 nC | + 175 C | 27 W | Enhancement | AEC-Q101 | Reel | TJ10S04M3L,LXHQ(O | ||||
Mfr: TJ60S04M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 90W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 60 A | 6.3 mOhms | - 20 V, 10 V | 3 V | 125 nC | + 175 C | 90 W | Enhancement | AEC-Q101 | Reel | TJ60S04M3L,LXHQ(O | ||||
Mfr: SSM6K204FE,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=2A VDSS=20V | 0In Stock | Si | SMD/SMT | ES-6 | N-Channel | 1 Channel | 20 V | 2 A | 126 mOhms | - 10 V, 10 V | 350 mV | 3.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSIII | Reel | ||||
Mfr: TK12A80W,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 1400pF 23nC 11.5A 45W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 11.5 A | 380 mOhms | - 20 V, 20 V | 3 V | 23 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK17E80W,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 2050pF 32nC 17A 180W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 17 A | 250 mOhms | - 20 V, 20 V | 3 V | 32 nC | - 55 C | + 150 C | 180 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK10E60W,S1VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 9.7A 100W FET 600V 700pF 20nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.7 A | 380 mOhms | - 30 V, 30 V | 3.7 V | 20 nC | - 55 C | + 150 C | 100 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 30 V | 2 A | 160 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 800 mW | Enhancement | Reel | ||||||||
Mfr: TJ90S04M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 180W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 90 A | 4.3 mOhms | - 20 V, 10 V | 2 V | 172 nC | + 175 C | 180 W | Enhancement | AEC-Q101 | Reel | TJ90S04M3L,LXHQ(O | ||||
Mfr: TK110P10PL,RQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DPAK-OS PD=75W 1MHz PWR MOSFET TRNS | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 40 A | 16 mOhms | - 20 V, 20 V | 2.5 V | 33 nC | - 55 C | + 175 C | 75 W | Enhancement | U-MOSIX-H | Reel | ||||
0In Stock | Si | SMD/SMT | DFN2020B-6 | N-Channel | 1 Channel | 30 V | 10 A | 56 mOhms | - 8 V, 12 V | 1 V | 2.2 nC | + 150 C | 3.3 W | Enhancement | Reel | |||||||
Mfr: SSM6J771G,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch SSM -5A -20V 12V VGSS 0.035Ohm | 0In Stock | Si | SMD/SMT | WCSP6C-6 | P-Channel | 2 Channel | 20 V | 5 A | 26 mOhms | - 12 V, 12 V | 1.2 V | 9.8 nC | - 55 C | + 150 C | 5 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: TPM7R10CQ5,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET, 150 V, 0.0071 ohma.10V, Qrr=43nCa.100A/ s, SOP Advance(E), U-MOS?-H | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 150 V | 120 A | 7.1 mOhms | 20 V | 4.5 V | 57 nC | + 150 C | 250 W | Enhancement | Reel | ||||||
Mfr: TK8A50D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 2 V | 16 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSVII | Tube | ||||
Mfr: SSM6K804R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Silicon N-channel MOS (U-MOSIX-H) | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: XK1R9F10QB,LXGQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 375W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TO-220SM-3 | N-Channel | 1 Channel | 100 V | 160 A | 1.92 mOhms | - 20 V, 20 V | 3.5 V | 184 nC | + 175 C | 375 W | Enhancement | AEC-Q101 | Reel | XK1R9F10QB,LXGQ(O | ||||
Mfr: SSM3K44MFV,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/Hi-Speed VESM (SOT-723) | 0In Stock | Si | SMD/SMT | VESM-3 | N-Channel | 1 Channel | 30 V | 100 mA | 4 Ohms | - 20 V, 20 V | 1.5 V | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
Mfr: SSM6L35FU(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 20 V | 100 mA, 180 mA | 11 Ohms | - 10 V, 10 V | 1 V | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel |