Toshiba - MOSFETs
3,399 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK380A65Y,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 9.7 A | 380 mOhms | - 30 V, 30 V | 4 V | 20 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSV | Tube | ||||
Mfr: TK10J80E,S1E TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PLN MOS 800V 1000m (VGS=10V) TO-3PN | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 800 V | 10 A | 700 mOhms | - 30 V, 30 V | 4 V | 46 nC | - 55 C | + 150 C | 250 W | Enhancement | MOSVIII | Tray | ||||
Mfr: TK10A80E,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PLN MOS 800V 1000m (VGS=10V) TO-220SIS | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 10 A | 700 mOhms | - 30 V, 30 V | 4 V | 46 nC | - 55 C | + 150 C | 50 W | Enhancement | MOSVIII | Tube | ||||
Mfr: SSM6L35FU(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 20 V | 100 mA, 180 mA | 11 Ohms | - 10 V, 10 V | 1 V | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
Mfr: TK22E10N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch PWR FET 52A 72W 100V VDSS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 52 A | 13.8 mOhms | - 20 V, 20 V | 2 V | 28 nC | - 55 C | + 150 C | 72 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TJ60S04M3L(T6L1,NQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch MOS -60A -40V 90W 6510pF 0.0063 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 60 A | 6.3 mOhms | - 20 V, 10 V | 3 V | 125 nC | - 55 C | + 175 C | 90 W | Enhancement | AEC-Q100 | U-MOSVI | Reel | |||
Mfr: TJ50S06M3L(T6L1,NQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch MOS -50A -60V 90W 6290pF 0.0138 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 13.8 mOhms | - 20 V, 10 V | 3 V | 124 nC | - 55 C | + 175 C | 90 W | Enhancement | AEC-Q100 | U-MOSVI | Reel | |||
Mfr: TK2R4E08QM,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220AB 80V 2.4mohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 120 A | 2.44 mOhms | - 20 V, 20 V | 3.5 V | 178 nC | + 175 C | 300 W | Enhancement | Tube | TK2R4E08QM,S1X(S | |||||
Mfr: SSM6K809R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:60V IC:6.0A PD:1.5W TSOP6F | 0In Stock | Si | SMD/SMT | TSOP6F | N-Channel | 1 Channel | 60 V | 6 A | 36 mOhms | - 20 V, 20 V | 2.5 V | 9.3 nC | + 175 C | 1.5 W | Enhancement | AEC-Q101 | Reel | SSM6K809R,LXHF(B | ||||
Mfr: SSM6J213FE(TE85L,F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOS VI FET ID -2.6A -20V 290pF | 0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 1 Channel | 20 V | 2.6 A | 250 mOhms | - 8 V, 8 V | 1 V | 4.7 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK10E60W,S1VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 9.7A 100W FET 600V 700pF 20nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.7 A | 380 mOhms | - 30 V, 30 V | 3.7 V | 20 nC | - 55 C | + 150 C | 100 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK56A12N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh6.2ohm VGS10V10uAVDS120V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 120 V | 56 A | 6.2 mOhms | - 20 V, 20 V | 4 V | 69 nC | - 55 C | + 150 C | 45 W | Enhancement | U-MOSVIII-H | Tube | ||||
0In Stock | Si | SMD/SMT | UF-6 | N-Channel | 1 Channel | 30 V | 500 mA | 145 mOhms | - 12 V, 12 V | 1.1 V | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 4.5 A | 3.1 Ohms | - 30 V, 30 V | 2.5 V | 20 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSVII | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 25 A | 99 mOhms | 30 V | 36 nC | + 150 C | 176 W | Enhancement | Tube | ||||||||
Mfr: TK7S10N1Z,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 60W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7 A | 48 mOhms | - 20 V, 20 V | 2 V | 7.1 nC | - 55 C | + 175 C | 50 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
Mfr: TK8Q60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 600 V | 8 A | 420 mOhms | - 30 V, 30 V | 3.7 V | 18.5 nC | - 55 C | + 150 C | 80 W | DTMOSIV | Tube | |||||
Mfr: TK100A08N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 2.6ohm VGS10V10uAVDS80V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 100 A | 2.6 mOhms | - 20 V, 20 V | 4 V | 130 nC | - 55 C | + 150 C | 45 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: SSM6N56FE,LM TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET N-Channel | 0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 2 Channel | 20 V | 800 mA | 235 mOhms, 235 mOhms | - 8 V, 8 V | 400 mV | 1 nC | - 55 C | + 150 C | 250 mW | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: SSM6J422TU,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS P-ch VDSS=-20V, VGSS=+6/-8V, ID=-4. | 0In Stock | Si | SMD/SMT | UF6-6 | P-Channel | 1 Channel | 20 V | 4 A | 42.7 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: TK34A10N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 8 mOhms VGS10V10uAVDS100V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 34 A | 7.9 mOhms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 35 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TPN2R203NC,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs X35PBF Power MOSFET Trans VGS10V VDS30V | 0In Stock | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 30 V | 45 A | 1.8 mOhms | - 20 V, 20 V | 2.3 V | 34 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVIII | Reel | ||||
Mfr: TPN13008NH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 80V 40A 18nC MOSFET | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 80 V | 40 A | 13.3 mOhms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TPN4R203NC,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 30V 53A 24nC MOSFET | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 30 V | 53 A | 35 mOhms | - 20 V, 20 V | 2.3 V | 24 nC | - 55 C | + 150 C | 22 W | Enhancement | U-MOSVIII | Reel | ||||
Mfr: TK39N60W,S1VF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 65mOhm 38.8A 270W 4100pF | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 38.8 A | 55 mOhms | - 30 V, 30 V | 3.7 V | 110 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSIV | Tube |