Toshiba - MOSFETs
3,378 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK4P60DB(T6RSS-Q) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 3.7A 600V 80W 540pF 2.0 Ohm | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 3.7 A | 2 Ohms | - 30 V, 30 V | 4.4 V | 11 nC | + 150 C | 80 W | Enhancement | MOSVII | Reel | |||||
Mfr: SSM6K810R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:100V IC:3.5A PD:1.5W TSOP6F | 0In Stock | Si | SMD/SMT | TSOP6F | N-Channel | 1 Channel | 100 V | 3.5 A | 51 mOhms | - 20 V, 20 V | 2.5 V | 3.2 nC | + 175 C | 1.5 W | Enhancement | AEC-Q101 | Reel | SSM6K810R,LXHF(B | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 27.6 A | 110 mOhms | - 30 V, 30 V | 2.5 V | 75 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 27.6 A | 94 mOhms | - 30 V, 30 V | 2.5 V | 75 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | SMD/SMT | TO-220SM-3 | N-Channel | 1 Channel | 40 V | 250 A | 740 uOhms | - 20 V, 20 V | 3 V | 227 nC | - 55 C | + 175 C | 375 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | Reel | ||||||||||||||||||||
Mfr: TK165A65Z5,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650 V 0.165 Ohm N-ch MOSFET TO-220SIS DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 18 A | 165 mOhms | 30 V | 4.5 V | 30 nC | + 150 C | 40 W | Enhancement | Tube | ||||||
Mfr: TK11A65W,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NChannel 0.33ohm DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 11.1 A | 330 mOhms | - 30 V, 30 V | 3.5 V | 25 nC | - 55 C | + 150 C | 35 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK14E65W,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NChannel 0.22ohm DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 13.7 A | 220 mOhms | - 30 V, 30 V | 3.5 V | 35 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TPH6R008QM,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V UMOS9-H SOP-Advance(N) 6mohm | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V, 80 V | 107 A | 6 mOhms | - 20 V, 20 V | 3.5 V | 38 nC | + 175 C | 135 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 30 V | - 20 V, 20 V | 2.3 V | 17.3 nC | + 150 C | 1.51 W | Enhancement | Reel | ||||||||||
0In Stock | Si | Reel | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 40 V | 150 A | 1.3 mOhms | - 20 V, 20 V | 3 V | 85 nC | + 175 C | 170 W | Enhancement | Reel | ||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 125 mOhms | - 30 V, 30 V | 4 V | 28 nC | + 150 C | 150 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 600 V | 30 A | 80 mOhms | 30 V | 4 V | 43 nC | + 150 C | 45 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | TOLL-9 | N-Channel | 1 Channel | 600 V | 25 A | 99 mOhms | 30 V | 4 V | 36 nC | + 150 C | 176 W | Enhancement | Reel | |||||||
Mfr: SSM6J212FE,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOS VI FET ID -4A -20VDSS 500mW | 0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 1 Channel | 20 V | 4 A | 94 mOhms | - 8 V, 8 V | 1 V | 14.1 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK40E06N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 60V N-Ch PWR FET 60A 67W 23nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 60 A | 10.4 mOhms | - 20 V, 20 V | 2 V | 23 nC | - 55 C | + 150 C | 67 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TPN22006NH,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 60V 21A 18W UMOSVIII 710pF 12nC | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 60 V | 21 A | 18 mOhms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 150 C | 18 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TJ15P04M3,RQ(S TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch MOS 1100 pF 29W PD -15A -40V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 15 A | 48 mOhms | - 20 V, 20 V | 2 V | 26 nC | - 55 C | + 150 C | 29 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: SSM6N36FE,LM TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 20V VDSS 10V VGSS N-Ch 150mW PD 1.5V | 0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 2 Channel | 20 V | 500 mA | 630 mOhms | - 10 V, 10 V | 350 mV | 1.23 nC | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q100 | U-MOSIII | Reel | |||
Mfr: TK6P60W,RVQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 9.7A 100W FET 600V 700pF 20nC | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 6.2 A | 820 mOhms | - 30 V, 30 V | 2.7 V | 12 nC | - 55 C | + 150 C | 60 W | Enhancement | DTMOSIV | Reel | ||||
0In Stock | Si | SMD/SMT | UFV-5 | N-Channel | 1 Channel | 20 V | 2.4 A | 65 mOhms | - 20 V, 20 V | 1.2 V | 2.2 nC | - 55 C | + 125 C | 500 mW | Enhancement | Reel | ||||||
0In Stock | Si | AEC-Q101 | Reel | |||||||||||||||||||
Mfr: SSM6N44FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/HiSpeed2n1 US6 (SOT-363) | 0In Stock | Si | SMD/SMT | US-6 | N-Channel | 2 Channel | 30 V | 100 mA | 4 Ohms | - 20 V, 20 V | 1.5 V | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel |
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