Toshiba - MOSFETs
3,399 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK33S10N1L,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 125W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 33 A | 9.7 mOhms | - 20 V, 20 V | 1.5 V | 33 nC | - 55 C | + 175 C | 125 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 3 A | 103 mOhms | - 8 V, 8 V | 1 V | 4.6 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | |||||
0In Stock | Si | SMD/SMT | UFV-5 | N-Channel | 1 Channel | 30 V | 1.9 A | 133 mOhms | - 12 V, 12 V | 1 V | 1.9 nC | - 55 C | + 125 C | 500 mW | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 30 V | 2 A | 117 mOhms | - 20 V, 20 V | 2.6 V | 5.3 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSII | Reel | ||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 20 V | 6 A | 22.5 mOhms | - 8 V, 6 V | 1 V | 23.1 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 1 Channel | 20 V | 2 A | 126 mOhms | - 10 V, 10 V | 1 V | 3.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSIII | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 30 A | 90 mOhms | - 30 V, 30 V | 3 V | 47 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSVI | Tube | |||||
Mfr: TK6R7A10PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=42W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 56 A | 10.1 mOhms | - 20 V, 20 V | 2.5 V | 58 nC | - 55 C | + 175 C | 42 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: TPH1500CNH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TSON-ADV 00 PD=78W 1MHz PWR MOSFET TRNS | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 150 V | 38 A | 15.4 mOhms | - 20 V, 20 V | 4 V | 22 nC | - 55 C | + 150 C | 78 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TPH1R104PB,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 132W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | SOP-Advance-8 | N-Channel | 1 Channel | 40 V | 120 A | 1.14 mOhms | - 20 V, 20 V | 3 V | 55 nC | + 175 C | 132 W | Enhancement | AEC-Q101 | Reel | TPH1R104PB,L1XHQ(O | ||||
0In Stock | Si | SMD/SMT | DFN2020B-6 | P-Channel | 1 Channel | 30 V | 24 A | 144 mOhms | - 12 V, 6 V | 1.2 V | 8.2 nC | + 150 C | 3.3 W | Enhancement | Reel | |||||||
Mfr: TK1K0A60F,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=40W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 7.5 A | 1 Ohms | - 30 V, 30 V | 4 V | 24 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSIX | Tube | ||||
Mfr: SSM6N7002CFU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-Signal MOSFET 2-in-1 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 60 V | 170 mA | 3.9 Ohms, 3.9 Ohms | - 20 V, 20 V | 1.1 V | 270 pC | - 55 C | + 150 C | 285 mW | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: SSM5N16FUTE85LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A 20V 2-in-1 | 0In Stock | Si | SMD/SMT | SOT-353-5 | N-Channel | 2 Channel | 20 V | 100 mA | 3 Ohms | - 10 V, 10 V | 600 mV | - 55 C | + 150 C | 200 mW | Enhancement | Reel | ||||||
Mfr: SSM6L820R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q SS MOS N-ch + P-ch Low Voltage Gate Drive VDSS:30V IC:4A PD:1.5W TSOP6F | 0In Stock | Si | SMD/SMT | TSOP6F | N-Channel, P-Channel | 2 Channel | 30 V | 4 A | 39.1 mOhms, 45 mOhms | - 8 V, 12 V | 1 V | 6.7 nC | + 150 C | 1.4 W | Enhancement | AEC-Q101 | Reel | SSM6L820R,LXHF(B | ||||
Mfr: TK17A65W,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 17.3 A | 200 mOhms | - 30 V, 30 V | 3.5 V | 45 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TPH3R10AQM,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 100V U-MOS X-H SOP-Advance(N) 3.1mohm | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 100 V | 120 A | 3.1 mOhms | - 20 V, 20 V | 2.5 V | 83 nC | - 55 C | + 175 C | 210 W | Enhancement | Reel | |||||
Mfr: TK6R8A08QM,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220SIS 80V 6.8mohm | 0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 80 V | 58 A | 6.8 mOhms | - 20 V, 20 V | 3.5 V | 39 nC | + 175 C | 41 W | Enhancement | Tube | TK6R8A08QM,S4X(S | |||||
Mfr: SSM6N62TU,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS Low RON Dual Nc h Id:0.8A, Vdss: 20 | 0In Stock | Si | SMD/SMT | UF6-6 | N-Channel | 1 Channel | 20 V | 800 mA | 456 mOhms | - 8 V, 8 V | 1 V | 2 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | Reel | |||||
Mfr: SSM3K15F,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=0.1A VDSS=30V | 0In Stock | Si | SMD/SMT | SC-59-3 | N-Channel | 1 Channel | 30 V | 100 mA | 4 Ohms | - 20 V, 20 V | 800 mV | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
Mfr: TK11A50D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 500V FET Vgss 30V 45W .45 ohm | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 500 V | 11 A | 600 mOhms | 45 W | MOSVII | Tube | ||||||||||
Mfr: TK190A65Z,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET 650V 190mOhms DTMOS-VI | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 15 A | 190 mOhms | - 30 V, 30 V | 4 V | 25 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: TK200F04N1L,LXGQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 375W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TO-220SM-3 | N-Channel | 1 Channel | 40 V | 200 A | 900 uOhms | - 20 V, 20 V | 3 V | 214 nC | + 175 C | 375 W | Enhancement | AEC-Q101 | Reel | TK200F04N1L,LXGQ(O | ||||
0In Stock | Si | SMD/SMT | P-Channel | 1 Channel | 20 V | 4 A | 42.7 mOhms | - 8 V, 8 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | |||||||
Mfr: TK080U60Z1,RQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600V Silicon N-Channel MOS (DTMOS) MOSFET | 0In Stock | Si | SMD/SMT | TOLL-9 | N-Channel | 1 Channel | 600 V | 30 A | 80 mOhms | 30 V | 4 V | 43 nC | + 150 C | 211 W | Enhancement | Reel |