Toshiba - MOSFETs
3,378 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SSM3J168F,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS Low RON Vds:-60 V Vgss:+10/-20V Id: | 0In Stock | Si | SMD/SMT | S-Mini-3 | P-Channel | 1 Channel | 60 V | 400 mA | 2 Ohms | - 20 V, 10 V | 2 V | 3 nC | + 150 C | 1.2 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: SSM3K62TU,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS Low RON Nch Vds s:20V ID:0.8A SOT-2 | 0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 20 V | 800 mA | 57 mOhms | - 8 V, 8 V | 1 V | 2 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: SSM6N62TU,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS Low RON Dual Nc h Id:0.8A, Vdss: 20 | 0In Stock | Si | SMD/SMT | UF6-6 | N-Channel | 1 Channel | 20 V | 800 mA | 456 mOhms | - 8 V, 8 V | 1 V | 2 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | Reel | |||||
Mfr: TK6R8A08QM,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220SIS 80V 6.8mohm | 0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 80 V | 58 A | 6.8 mOhms | - 20 V, 20 V | 3.5 V | 39 nC | + 175 C | 41 W | Enhancement | Tube | TK6R8A08QM,S4X(S | |||||
0In Stock | Si | Reel | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 15 A | 17.8 mOhms | - 20 V, 20 V | 2.5 V | 10 nC | - 55 C | + 175 C | 46 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | SMD/SMT | 2-10AF1A-9 | N-Channel | 1 Channel | 650 V | 38 A | 51 mOhms | - 30 V, 30 V | 4 V | 62 nC | - 55 C | + 150 C | 270 W | Enhancement | Reel | ||||||
Mfr: SSM6L820R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q SS MOS N-ch + P-ch Low Voltage Gate Drive VDSS:30V IC:4A PD:1.5W TSOP6F | 0In Stock | Si | SMD/SMT | TSOP6F | N-Channel, P-Channel | 2 Channel | 30 V | 4 A | 39.1 mOhms, 45 mOhms | - 8 V, 12 V | 1 V | 6.7 nC | + 150 C | 1.4 W | Enhancement | AEC-Q101 | Reel | SSM6L820R,LXHF(B | ||||
Mfr: TPH9R00CQ5,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 150V U-MOS X-H SOP-Advance(N) 9mohm | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 150 V | 64 A | 9 mOhms | - 20 V, 20 V | 4.5 V | 44 nC | 210 W | Enhancement | Reel | |||||||
0In Stock | Si | SMD/SMT | TOLL-9 | N-Channel | 1 Channel | 650 V | 24 A | 115 mOhms | 30 V | 4.5 V | 42 nC | + 150 C | 190 W | Enhancement | Reel | |||||||
0In Stock | Si | SMD/SMT | TOLL-9 | N-Channel | 1 Channel | 600 V | 20 A | 125 mOhms | 30 V | 4 V | 28 nC | + 150 C | 150 W | Enhancement | Reel | |||||||
Mfr: TK62N60W5,S1VF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 45mOhm 61.8A 400W 6500pF | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 61.8 A | 36 mOhms | - 30 V, 30 V | 3 V | 205 nC | - 55 C | + 150 C | 400 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 13.7 A | 250 mOhms | - 30 V, 30 V | 3 V | 40 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: TK10A60W,S4VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 600V 9.7A 30W DTMOSIV 700pF 20nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.7 A | 327 mOhms | - 30 V, 30 V | 3.7 V | 20 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK40E10N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 40V N0Ch PWR FET 90A 126W 3000pF | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 90 A | 8.2 mOhms | - 20 V, 20 V | 126 W | U-MOSVIII-H | Tube | |||||||||
Mfr: TPC8125,LQ(S TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch -30V FET 2580pF -10A 1.9W | 0In Stock | Si | SMD/SMT | SOP-8 | P-Channel | 1 Channel | 30 V | 10 A | 17 mOhms | - 25 V, 20 V | 2 V | 64 nC | - 55 C | + 150 C | 1.9 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK10A55D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 500V VDSS 700V 45W 1200pF 10A | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 550 V | 10 A | 720 mOhms | 45 W | MOSVII | Tube | ||||||||||
Mfr: TK11A55D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 10A 40V 25W 410pF 520 mOhms | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 500 V | 11 A | 520 mOhms | 25 W | MOSVII | Tube | ||||||||||
Mfr: TK14A55D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 14A 550V 50W 2300pF 0.37 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 550 V | 14 A | 370 mOhms | 50 W | MOSVII | Tube | ||||||||||
Mfr: TK31J60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 30.8A 230W FET 600V 3000pF 86nC | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 30.8 A | 88 mOhms | - 30 V, 30 V | 105 nC | 230 W | DTMOSIV | Tube | ||||||||
Mfr: TK11A50D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 500V FET Vgss 30V 45W .45 ohm | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 500 V | 11 A | 600 mOhms | 45 W | MOSVII | Tube | ||||||||||
0In Stock | Si | SMD/SMT | UFV-5 | N-Channel | 1 Channel | 30 V | 1.9 A | 133 mOhms | - 12 V, 12 V | 1 V | 1.9 nC | - 55 C | + 125 C | 500 mW | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 1 Channel | 20 V | 2 A | 126 mOhms | - 10 V, 10 V | 1 V | 3.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSIII | Reel | |||||
Mfr: TK33S10N1L,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 125W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 33 A | 9.7 mOhms | - 20 V, 20 V | 1.5 V | 33 nC | - 55 C | + 175 C | 125 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
Mfr: TK17A65W,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 17.3 A | 200 mOhms | - 30 V, 30 V | 3.5 V | 45 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube |
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