Toshiba - MOSFETs
3,411 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TPH1R403NL,L1Q TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs X35PBF Power MOSFET Trans VGS4.5VVDS30V | Not Available Online | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 60 A | 1.4 mOhms | 20 V | 2.3 V | 46 nC | - 55 C | + 150 C | 64 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TK40A10N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh6.8ohm VGS10V10uAVDS100V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 40 A | 6.8 mOhms | 20 V | 4 V | 49 nC | - 55 C | + 150 C | 35 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TPN2010FNH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOSVIII 250V 200m (VGS=10V) TSON-ADV | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 250 V | 9.9 A | 168 mOhms | 20 V | 4 V | 7 nC | - 55 C | + 150 C | 39 W | Enhancement | U-MOSVIII-H | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 8 A | 440 mOhms | 30 V | 3 V | 22 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 150 mOhms | 30 V | 3 V | 55 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 17.3 A | 170 mOhms | 30 V | 2.5 V | 45 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 105 mOhms | 30 V | 2.5 V | 40 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV-H | Tube | |||||
Mfr: SSM3J372R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P Channel -30V -6A AECQ MOSFET | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 30 V | 6 A | 42 mOhms | - 12 V, 6 V | 1.2 V | 8.2 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: SSM3J377R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P Channel -20V -3.9A AECQ MOSFET | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 3.9 A | 93 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: TK110A65Z,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET 650V 110mOhms DTMOS-VI | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 24 A | 110 mOhms | 30 V | 4 V | 40 nC | - 55 C | + 150 C | 45 W | Enhancement | Tube | |||||
Mfr: TK155A65Z,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET 650V 155mOhms DTMOS-VI | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 18 A | 155 mOhms | 30 V | 4 V | 23 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: SSM3J371R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS P-ch Vdss:-20V Vgss:-8/+6V Id:-4A S | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 4 A | 55 mOhms | - 8 V, 6 V | 1 V | 10.4 nC | + 175 C | 2 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: SSM3J374R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS P-ch Vdss:-30V Vgss:-20/+10V Id:-4A | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 30 V | 4 A | 71 mOhms | - 20 V, 10 V | 2 V | 5.9 nC | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: SSM6N7002KFU,LXH TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS 2 in 1 Dual Nch High ESD protected | 0In Stock | Si | SMD/SMT | US6-6 | N-Channel | 1 Channel | 60 V | 300 mA | 1.5 Ohms | 20 V | 2.1 V | 390 pC | + 150 C | 500 mW | Enhancement | AEC-Q101 | Reel | |||||
Mfr: TK3R2A08QM,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220SIS 80V 3.2mohm | 0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 80 V | 92 A | 3.2 mOhms | 20 V | 3.5 V | 102 nC | + 175 C | 45 W | Enhancement | Tube | TK3R2A08QM,S4X(S | |||||
Mfr: TK3R3E08QM,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220AB 80V 3.3mohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 120 A | 3.3 mOhms | 20 V | 3.5 V | 110 nC | + 175 C | 230 W | Enhancement | Tube | TK3R3E08QM,S1X(S | |||||
Mfr: TK042N65Z5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650V DTMOS6 HSD TO-247 42mohm | 0In Stock | Tube | ||||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 80 mOhms | 30 V | 4 V | 43 nC | + 150 C | 211 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 37 A | 63 mOhms | 30 V | 4 V | 56 nC | + 150 C | 242 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 30 V | 2.5 A | 73 mOhms | 20 V | 2.6 V | 16 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 250 V | 13 A | 250 mOhms | 20 V | 1.5 V | 25 nC | - 55 C | + 150 C | 96 W | Enhancement | MOSVII | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4 A | 3.5 Ohms | 30 V | 2.5 V | 15 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSVIII | Tube | |||||
Mfr: TJ20S04M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 41W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 20 A | 22.2 mOhms | - 20 V, 10 V | 3 V | 37 nC | + 175 C | 41 W | Enhancement | AEC-Q101 | Reel | TJ20S04M3L,LXHQ(O | ||||
Mfr: TK11S10N1L,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 65W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 11 A | 28 mOhms | 20 V | 1.5 V | 15 nC | - 55 C | + 175 C | 65 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
Mfr: TK110E10PL,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220 PD=87W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 42 A | 16 mOhms | 20 V | 2.5 V | 33 nC | - 55 C | + 175 C | 87 W | Enhancement | U-MOSIX-H | Tube |
