Toshiba - MOSFETs
3,411 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 3.9 A | 93 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
Mfr: TK042N65Z5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650V DTMOS6 HSD TO-247 42mohm | 0In Stock | Tube | ||||||||||||||||||||
Mfr: SSM6N7002KFU,LXH TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS 2 in 1 Dual Nch High ESD protected | 0In Stock | Si | SMD/SMT | US6-6 | N-Channel | 1 Channel | 60 V | 300 mA | 1.5 Ohms | 20 V | 2.1 V | 390 pC | + 150 C | 500 mW | Enhancement | AEC-Q101 | Reel | |||||
Mfr: SSM3K72KFS,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q Low Rdson SS MOS N-ch Logic-Level Gate Drive VDSS:60V Ic:0.3A SOT-416 | 0In Stock | Si | SMD/SMT | SSM-3 | N-Channel | 1 Channel | 60 V | 300 mA | 1.65 Ohms | 20 V | 2.1 V | 390 pC | + 150 C | 500 mW | Enhancement | AEC-Q101 | Reel | SSM3K72KFS,LXHF(B | ||||
Mfr: SSM3J371R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS P-ch Vdss:-20V Vgss:-8/+6V Id:-4A S | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 4 A | 55 mOhms | - 8 V, 6 V | 1 V | 10.4 nC | + 175 C | 2 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: TK3R2A08QM,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220SIS 80V 3.2mohm | 0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 80 V | 92 A | 3.2 mOhms | 20 V | 3.5 V | 102 nC | + 175 C | 45 W | Enhancement | Tube | TK3R2A08QM,S4X(S | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 250 V | 13 A | 250 mOhms | 20 V | 1.5 V | 25 nC | - 55 C | + 150 C | 96 W | Enhancement | MOSVII | Reel | |||||
Mfr: TK110E10PL,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220 PD=87W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 42 A | 16 mOhms | 20 V | 2.5 V | 33 nC | - 55 C | + 175 C | 87 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: TK16J60W,S1VE TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-3PN PD=130W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 190 mOhms | 30 V | 3.7 V | 38 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tray | ||||
Mfr: TK28N65W5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-247(OS) PD=230W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 27.6 A | 130 mOhms | 30 V | 4.5 V | 90 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK110A10PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=36W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 36 A | 16 mOhms | 20 V | 2.5 V | 33 nC | - 55 C | + 175 C | 36 W | Enhancement | U-MOSIX-H | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 30 A | 65 mOhms | 30 V | 4 V | 62 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSVI | Reel | |||||
Mfr: TK155A65Z,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET 650V 155mOhms DTMOS-VI | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 18 A | 155 mOhms | 30 V | 4 V | 23 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: SSM3J372R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P Channel -30V -6A AECQ MOSFET | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 30 V | 6 A | 42 mOhms | - 12 V, 6 V | 1.2 V | 8.2 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: SSM3J377R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P Channel -20V -3.9A AECQ MOSFET | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 3.9 A | 93 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | ||||
0In Stock | Si | Reel | ||||||||||||||||||||
Mfr: TK20E60W5,S1VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220 PD=165W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 20 A | 175 mOhms | 30 V | 4.5 V | 55 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TPH3R704PC,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SOP-ADV PD=90W 1MHz PWR MOSFET TRNS | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 82 A | 5.8 mOhms | 20 V | 2.4 V | 47 nC | - 55 C | + 175 C | 90 W | Enhancement | U-MOSIX-H | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 20 V | 250 mA | 1.4 Ohms | 10 V | 1 V | + 150 C | 285 mW | Enhancement | U-MOSVII | Reel | |||||||
Mfr: SSM6J216FE,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=--4.8A VDSS=-12V | 0In Stock | Si | SMD/SMT | SOT-563-6 | P-Channel | 1 Channel | 12 V | 4.8 A | 26 mOhms | 8 V | 1 V | 12.7 nC | - 55 C | + 150 C | 700 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK024Z60Z1,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.024 Ohm N-ch MOSFET TO-247-4L(X) DTMOS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 600 V | 80 A | 24 mOhms | 30 V | 4 V | 140 nC | + 150 C | 506 W | Enhancement | Tube | ||||||
Mfr: TK042Z65Z5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.042 Ohm N-ch MOSFET TO-247-4L(X) DTMOS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 600 V | 55 A | 42 mOhms | 30 V | 4.5 V | 105 nC | + 150 C | 360 W | Enhancement | Tube | ||||||
Mfr: TK068Z65Z5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650 V 0.068 Ohm N-ch MOSFET TO-247-4L(X) DTMOS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 37 A | 68 mOhms | 30 V | 4.5 V | 68 nC | + 150 C | 270 W | Enhancement | Tube | ||||||
Mfr: TK62N60W5,S1VF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 45mOhm 61.8A 400W 6500pF | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 61.8 A | 36 mOhms | 30 V | 3 V | 205 nC | - 55 C | + 150 C | 400 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK290A60Y,S4X TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs N-Ch DTMOSV 600V 35W 730pF 11.5A | Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 11.5 A | 290 mOhms | 30 V | 4 V | 25 nC | - 55 C | + 150 C | 35 W | Enhancement | DTMOSV | Tube |
