Toshiba - MOSFETs
3,378 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 3.2 A | 93 mOhms | - 8 V, 6 V | 1 V | 4.7 nC | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 29 A | 95 mOhms | - 30 V, 30 V | 4.5 V | 50 nC | + 150 C | 230 W | Enhancement | Tube | |||||||
Mfr: SSM6N56FE,LM TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET N-Channel | 0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 2 Channel | 20 V | 800 mA | 235 mOhms, 235 mOhms | - 8 V, 8 V | 400 mV | 1 nC | - 55 C | + 150 C | 250 mW | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: TK62J60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 61.8A 400W FET 600V 3500pF 180nC | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 61.8 A | 33 mOhms | - 30 V, 30 V | 3.7 V | 180 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TPN2R703NL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs X35PBF Power MOSFET Trans VGS4.5VVDS30V | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 30 V | 45 A | 3.3 mOhms | - 20 V, 20 V | 2.3 V | 21 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: SSM3K344R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=3A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 20 V | 3 A | 51 mOhms | - 8 V, 8 V | 400 mV | 2 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVII-H | Reel | ||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 20 V | 1.5 A | 213 mOhms | - 8 V, 8 V | 1 V | 6.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 4.5 A | 3.1 Ohms | - 30 V, 30 V | 2.5 V | 20 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSVII | Tube | |||||
Mfr: TPW1R306PL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs POWER MOSFET TRANSISTOR PD=170W | 0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 60 V | 260 A | 1.29 mOhms | - 20 V, 20 V | 1.5 V | 91 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: SSM3K389R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET, 60 V, 2 A, 82 m at 10 V, TSOP6F | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 60 V | 2 A | 171 mOhms | 20 V | 2.1 V | 1.84 nC | + 150 C | 1.7 W | Enhancement | Reel | ||||||
Mfr: TK5R1A08QM,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220SIS 80V 5.1mohm | 0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 80 V | 70 A | 5.1 mOhms | - 20 V, 20 V | 3.5 V | 54 nC | + 175 C | 45 W | Enhancement | Tube | TK5R1A08QM,S4X(S | |||||
Mfr: XPH4R714MC,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 132W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | SOP-Advance-8 | P-Channel | 1 Channel | 40 V | 60 A | 4.7 mOhms | - 20 V, 10 V | 2.1 V | 160 nC | - 55 C | + 175 C | 132 W | Enhancement | AEC-Q101 | Reel | XPH4R714MC,L1XHQ(O | |||
Mfr: TK125Z60Z1,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.125 Ohm N-ch MOSFET TO-247-4L(X) DTMOS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 600 V | 20 A | 125 mOhms | 30 V | 4 V | 28 nC | + 150 C | 150 W | Enhancement | Tube | ||||||
Mfr: TK9A55DA(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 8.5A 550V 40W 1050pF 0.86 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 550 V | 8.5 A | 860 mOhms | 40 W | MOSVII | Tube | ||||||||||
Mfr: TK190A60Z1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.190 Ohm N-ch MOSFET TO-220SIS DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 14 A | 190 mOhms | 30 V | 4 V | 20 nC | + 150 C | 40 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 30 V | 76 A | 5.2 mOhms | - 20 V, 20 V | 1.1 V | 22 nC | - 55 C | + 175 C | 61 W | Enhancement | U-MOSIX-H | Reel | |||||
Mfr: SSM3J352F,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-2A VDSS=-20V | 0In Stock | Si | SMD/SMT | S-Mini-3 | P-Channel | 1 Channel | 20 V | 2 A | 90 mOhms | - 12 V, 12 V | 1.2 V | 5.1 nC | - 55 C | + 150 C | 600 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: SSM3J15FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET High Speed Switching | 0In Stock | Si | SMD/SMT | SOT-323-3 | P-Channel | 1 Channel | 30 V | 100 mA | 12 Ohms | - 20 V, 20 V | 1.1 V | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 60 V | 76 A | 7 mOhms | - 20 V, 20 V | 1.5 V | 20 nC | - 55 C | + 175 C | 75 W | Enhancement | U-MOSIX-H | Reel | |||||
Mfr: TK32A12N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh11ohm VGS10V10uAVDS120V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 120 V | 32 A | 11 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 150 C | 30 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TPH1110FNH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs X35PBF Power MOSFET Transistr95ohm250V | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 250 V | 10 A | 95 mOhms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 150 C | 1.6 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TK290A60Y,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSV 600V 35W 730pF 11.5A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 11.5 A | 290 mOhms | - 30 V, 30 V | 4 V | 25 nC | - 55 C | + 150 C | 35 W | Enhancement | DTMOSV | Tube | ||||
Mfr: TK10A50D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 10A 500V 45W 1050pF 0.72 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 10 A | 620 mOhms | - 30 V, 30 V | 2 V | 20 nC | - 55 C | + 150 C | 45 W | Enhancement | MOSVII | Tube | ||||
Mfr: SSM6N7002BFE,LM TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz | 0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 2 Channel | 60 V | 200 mA | 2.1 Ohms | - 20 V, 20 V | 1.5 V | - 55 C | + 150 C | 150 mW | Enhancement | U-MOSIV | Reel | |||||
Mfr: TK024N60Z1,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET, 600 V, 0.024 Ohm10V, TO-247, DTMOS6 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 80 A | 24 mOhms | 30 V | 4 V | 140 nC | + 150 C | 506 W | Enhancement | Tube |
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