Toshiba - IGBTs
53 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: GT30N135SRA,S1E TTI: GT30N135SRA,S1E Toshiba Availability: 0In StockIGBTs 1350V DISCRETE IGBT TRANS | 0In Stock | Si | Through Hole | Single | 1.35 kV | 2.15 V | - 25 V, 25 V | 60 A | 348 W | - 55 C | + 175 C | Tube | |||||
0In Stock | Si | TO-220SIS-3 | Through Hole | Single | 600 V | 1.5 V | - 25 V, 25 V | 15 A | 30 W | - 55 C | + 150 C | GT15J341 | Tube | ||||
Mfr: GT20N135SRA,S1E TTI: Not Assigned Toshiba Availability: 0In StockIGBTs DISCRET IGBT TRANSTR Vces=1350V Ic=40A | 0In Stock | Si | TO-247-3 | Through Hole | Single | 1.35 kV | 2.4 V | - 25 V, 25 V | 40 A | 312 W | - 55 C | + 175 C | Tube | ||||
0In Stock | Tube | ||||||||||||||||
0In Stock | Si | TO-220SIS-3 | Through Hole | Single | 600 V | 1.5 V | - 25 V, 25 V | 20 A | 45 W | - 55 C | + 150 C | GT20J341 | Tube | ||||
0In Stock | Si | TO-3PN-3 | Through Hole | Single | 1.2 kV | 1.5 V | - 25 V, 25 V | 40 A | 230 W | - 55 C | + 175 C | GT40QR21 | Tray | ||||
0In Stock | Si | TO-3PN-3 | Through Hole | Single | 600 V | 1.45 V | - 25 V, 25 V | 50 A | 230 W | - 55 C | + 175 C | GT50JR21 | Tray | ||||
0In Stock | Si | TO-3PN-3 | Through Hole | Single | 1.35 kV | 1.6 V | - 25 V, 25 V | 40 A | 230 W | - 55 C | + 175 C | GT40RR21 | Tray | ||||
0In Stock | Si | TO-3PN-3 | Through Hole | Single | 600 V | 1.6 V | - 25 V, 25 V | 50 A | 200 W | - 55 C | + 175 C | GT50J341 | Tray | ||||
0In Stock | Si | TO-3PN-3 | Through Hole | Single | 1.8 kV | 2.9 V | - 25 V, 25 V | 40 A | 375 W | - 55 C | + 175 C | GT40WR21 | Tray | ||||
0In Stock | Si | TO-3P-3 | Through Hole | Single | 600 V | 2 V | - 20 V, 20 V | 30 A | 170 W | - 55 C | + 150 C | GT30J121 | Tube | ||||
Mfr: GT50JR22(STA1,E,S) TTI: Not Assigned Toshiba Availability: 0In StockIGBTs IGBT for Soft Switching Apps | 0In Stock | Si | Through Hole | Single | 600 V | 1.55 V | - 25 V, 25 V | 50 A | 230 W | - 55 C | + 175 C | GT50JR22 | Tray | ||||
Not Available Online | - 20 V, 20 V | ||||||||||||||||
Mfr: GT30N135SRA,S1E TTI: GT30N135SRAS1E Toshiba Availability: 0In StockIGBTs 1350V DISCRETE IGBT TRANS | 0In Stock | Tube | |||||||||||||||
Not Available Online | Si | TO-3PN-3 | Through Hole | Single | 600 V | 1.45 V | - 25 V, 25 V | 50 A | 230 W | - 55 C | + 175 C | GT50JR21 | |||||
Not Available Online | - 25 V, 25 V | GT50JR22 | |||||||||||||||
Not Available Online | Si | TO-3PN-3 | Through Hole | Single | 1 kV | 2.2 V | - 25 V, 25 V | 50 A | 156 W | - 55 C | + 150 C | GT50N322 | |||||
Not Available Online | |||||||||||||||||
Not Available Online | Si | TO-3P | Through Hole | Single | 1.2 kV | - 20 V, 20 V | 15 A | - 55 C | + 150 C | GT15Q102 | |||||||
Not Available Online | Si | TO-220-3 | Through Hole | Single | 400 V | - 25 V, 25 V | + 150 C | GT25G101 | |||||||||
Not Available Online | Si | TO-3P | Through Hole | Single | 1 kV | - 25 V, 25 V | - 55 C | + 150 C | GT60N322 | Bulk | |||||||
Not Available Online | Si | TO-3P | Through Hole | Single | 600 V | - 20 V, 20 V | 50 A | - 55 C | + 150 C | GT50J121 | |||||||
Not Available Online | Si | TO-3P | Through Hole | Single | 600 V | - 20 V, 20 V | - 55 C | + 150 C | GT50J102 | Bulk | |||||||
Not Available Online | Si | TO-3P | Through Hole | Single | 1 kV | - 25 V, 25 V | - 55 C | + 150 C | GT60N321 | ||||||||
Not Available Online | Si | TO-220SIS-3 | Through Hole | Single | 600 V | 1.5 V | - 25 V, 25 V | 15 A | 30 W | - 55 C | + 150 C | GT15J341 |
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