Nexperia - SiC MOSFETs
30 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: NSF040120T1A1-QHP TTI: Not Assigned Nexperia Availability: 0In StockSiC MOSFETs NSF040120T1A1-Q/SOT8114/QDPAK | 0In Stock | 934669821128 | |||||||||||||||||
Mfr: NSF040120L4A1Q TTI: Not Assigned Nexperia Availability: 0In StockSiC MOSFETs NSF040120L4A1/SOT8071/TO247-4L | 0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 53 A | 60 mOhms | - 10 V, + 22 V | 2.9 V | 81 nC | - 55 C | + 175 C | 234 W | Enhancement | 934668741127 934670000000 | ||||
Mfr: NSF017120T2A0J TTI: Not Assigned Nexperia Availability: 0In StockSiC MOSFETs NSF017120T2A0/SOT8107/X.PAK | 0In Stock | SMD/SMT | SOT8107-2-7 | 1 Channel | 1.2 kV | 122 A | 26 mOhms | - 10 V, + 22 V | 2.9 V | 190 nC | - 55 C | + 175 C | 517 W | Enhancement | 934669058118 | ||||
Mfr: NSF040120D7A1J TTI: Not Assigned Nexperia Availability: 0In StockSiC MOSFETs NSF040120D7A1/SOT8070/TO263-7L | 0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 54 A | 60 mOhms | - 10 V, + 22 V | 2.9 V | 81 nC | - 55 C | + 175 C | 250 W | Enhancement | 934668743118 934670000000 | ||||
Mfr: NSF080120T1A1HP TTI: Not Assigned Nexperia Availability: 0In StockSiC MOSFETs NSF080120T1A1/SOT8114/QDPAK | 0In Stock | 934669818128 |
- 1
- 2