IXYS - MOSFETs
2,272 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 5 A | 2.8 Ohms | 30 V | 3 V | 33.4 nC | - 55 C | + 150 C | 250 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2.5 kV | 1.5 A | 40 Ohms | 20 V | 2 V | 41 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | SMD-24 | N-Channel | 6 Channel | 150 V | 50 A | 24 mOhms | 20 V | 2.5 V | 97 nC | - 55 C | + 175 C | Enhancement | ISOPLUS-DIL | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 600 mA | 30 Ohms | 20 V | 2 V | 13.3 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 60 A | 18 mOhms | 20 V | 2.5 V | 49 nC | - 55 C | + 175 C | 176 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFK240N15T2 TTI: IXFK240N15T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 240 A | 5.2 mOhms | 20 V | 2.5 V | 460 nC | - 55 C | + 175 C | 1.25 mW | Enhancement | HiPerFET | Tube | |||
Mfr: IXFB110N60P3 TTI: IXFB110N60P3 IXYS Availability: 0In StockMOSFETs 600V 110A 0.056Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 600 V | 110 A | 56 mOhms | 30 V | 5 V | 245 nC | - 55 C | + 150 C | 1.89 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 200 V | 68 A | 55 mOhms | 15 V | 4 V | 380 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 2.5 A | 6 Ohms | 30 V | 5 V | 44.5 nC | - 55 C | + 150 C | 110 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 20 A | 1 Ohms | 30 V | 4.5 V | 215 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 40 A | 140 mOhms | 30 V | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 500 V | 7 A | 1.5 Ohms | 20 V | - 55 C | + 150 C | 180 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 16 A | 600 mOhms | 30 V | 5 V | 71 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 100 A | 27 mOhms | 20 V | 2.5 V | 185 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 36 A | 110 mOhms | 30 V | 3 V | 70 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 12 A | 500 mOhms | 30 V | 5.5 V | 29 nC | - 55 C | + 150 C | 200 W | Enhancement | Polar | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 12 A | 500 mOhms | 30 V | 5.5 V | 29 nC | - 55 C | + 150 C | 200 W | Enhancement | Polar | Tube | ||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 1 kV | 44 A | 220 mOhms | 30 V | 6.5 V | 305 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 24 A | 300 mOhms | 30 V | 5 V | 160 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | 20 V | 4.5 V | 17.8 nC | - 55 C | + 150 C | 63 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 48 A | 50 mOhms | 30 V | - 55 C | + 175 C | 250 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | 150 V | 56 A | 36 mOhms | HiPerFET | Tube | |||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 76 A | 42 mOhms | 20 V | 5 V | 92 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 102 A | 18 mOhms | 20 V | 2.5 V | 87 nC | - 55 C | + 175 C | 455 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 900 V | 40 A | 210 mOhms | 30 V | 6.5 V | 230 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube |