IXYS - MOSFETs
2,277 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 150 V | 76 A | 22 mOhms | - 20 V, 20 V | 2.5 V | 97 nC | - 55 C | + 175 C | 350 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 55 V | 200 A | 4.2 mOhms | - 20 V, 20 V | 2 V | 109 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 9 A | 1.04 Ohms | - 30 V, 30 V | - 55 C | + 150 C | 230 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 75 V | 230 A | 4.2 mOhms | - 20 V, 20 V | 2 V | 178 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 220 A | 9 mOhms | - 20 V, 20 V | 4.5 V | 162 nC | - 55 C | + 175 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 120 A | 24 mOhms | - 20 V, 20 V | 5 V | 265 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 75 V | 230 A | 4.2 mOhms | - 20 V, 20 V | 2 V | 178 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFP130N10T2 TTI: IXFP130N10T2 IXYS Availability: 0In StockMOSFETs Trench T2 HiperFET Power MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 130 A | 9.1 mOhms | - 20 V, 20 V | 4.5 V | 130 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 100 V | 195 A | 8 mOhms | Tube | |||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 76 A | 42 mOhms | - 20 V, 20 V | 5 V | 92 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 34 A | 100 mOhms | - 20 V, 20 V | 5.2 V | 29 nC | - 55 C | + 150 C | 446 W | Enhancement | Tube | |||||
0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | HiPerFET | Tube | ||||||||||||||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 75 V | 120 A | 7.7 mOhms | - 20 V, 20 V | 2 V | 78 nC | - 55 C | + 175 C | 250 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 55 V | 200 A | 3.3 mOhms | - 20 V, 20 V | 4 V | 109 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 55 V | 140 A | 5.4 mOhms | - 20 V, 20 V | 2 V | 82 nC | - 55 C | + 175 C | 180 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 800 V | 40 A | 150 mOhms | - 30 V, 30 V | 5 V | 250 nC | - 55 C | + 150 C | 625 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 1.1 kV | 40 A | 260 mOhms | - 30 V, 30 V | 3.5 V | 310 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 200 V | 86 A | 29 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 90 A | 20 mOhms | - 30 V, 30 V | - 55 C | + 175 C | 455 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 600 V | 10 A | 790 mOhms | - 20 V, 20 V | 4 V | 92 nC | - 55 C | + 150 C | 190 W | Enhancement | PolarP | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 850 V | 30 A | 220 mOhms | - 30 V, 30 V | 3.5 V | 68 nC | - 55 C | + 150 C | 695 W | Enhancement | HiPerFET | Tube |
