IXYS - MOSFETs
2,277 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 3 kV | 400 mA | 190 Ohms | - 20 V, 20 V | 2 V | 13 nC | - 55 C | + 150 C | 104 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 50 A | 30 mOhms | - 20 V, 20 V | 2.5 V | 33 nC | - 55 C | + 150 C | 240 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 55 V | 260 A | 3.3 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 34 A | 96 mOhms | - 30 V, 30 V | 3 V | 54 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | ISOPLUS-i4-PAK-3 | N-Channel | 3 kV | 1.6 A | 21 Ohms | - 20 V, 20 V | 3 V | - 55 C | + 150 C | 160 W | Polar3 | Tube | |||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 16 A | 470 mOhms | - 30 V, 30 V | 3 V | 36 nC | - 55 C | + 150 C | 347 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 300 mOhms | - 30 V, 30 V | 2.5 V | - 55 C | + 150 C | 40 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-3P | N-Channel | 100 V | 60 A | 18 mOhms | - 30 V, 30 V | 2.5 V | - 55 C | + 175 C | 176 W | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 200 V | 90 A | 32 mOhms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | - 30 V, 30 V | 3 V | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 160 A | 7 mOhms | - 55 C | + 175 C | 430 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 2.5 kV | 5 A | 8.8 Ohms | - 30 V, 30 V | 5 V | 200 nC | - 55 C | + 150 C | 960 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 150 V | 110 A | 11 mOhms | - 20 V, 20 V | 2.5 V | 150 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFA230N075T2 TTI: IXFA230N075T2 IXYS Availability: 0In StockMOSFETs TrenchT2 HiperFETs Power MOSFET | 0In Stock | Si | SMD/SMT | TO-263AA-3 | N-Channel | 1 Channel | 75 V | 230 A | 4.2 mOhms | - 20 V, 20 V | 2 V | 178 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFR32N100Q3 TTI: IXFR32N100Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/23A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 23 A | 350 mOhms | - 30 V, 30 V | 3.5 V | 195 nC | - 55 C | + 150 C | 570 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFR48N60Q3 TTI: IXFR48N60Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 600V/32A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 32 A | 154 mOhms | - 30 V, 30 V | 140 nC | 500 W | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 180 A | 11 mOhms | - 20 V, 20 V | - 55 C | + 175 C | 830 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 15 A | 250 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 166 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 800 mA | 25 Ohms | - 20 V, 20 V | 4.5 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 2.4 A | 7.5 Ohms | - 20 V, 20 V | 2.5 V | 37 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3 A | 4.8 Ohms | - 20 V, 20 V | 4.8 V | 39 nC | - 55 C | + 150 C | 125 W | Enhancement | Polar | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | 1.2 kV | 1 A | 20 Ohms | Tube | ||||||||||||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 300 V | 170 A | 18 mOhms | - 20 V, 20 V | 4.5 V | 258 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFK40N90P TTI: IXFK40N90P IXYS Availability: 0In StockMOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 900 V | 40 A | 210 mOhms | - 30 V, 30 V | 6.5 V | 230 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 40 V | 220 A | 2.8 mOhms | - 20 V, 20 V | 4 V | 112 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube |