IXYS - MOSFETs
2,278 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 42 A | 84 mOhms | 20 V | 5.5 V | 70 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 27 A | 320 mOhms | 20 V | 4.5 V | 170 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTT440N055T2 TTI: IXTT440N055T2 IXYS Availability: 0In StockMOSFETs N-Channel Trench Gate TrenchT2 MOSFET | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 55 V | 440 A | 1.8 mOhms | 20 V | 2 V | 405 nC | - 55 C | + 175 C | 1 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 46 A | 73 mOhms | 20 V | 5.2 V | 40 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 160 A | 9.6 mOhms | 30 V | 5 V | 160 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 52 A | 120 mOhms | 30 V | - 55 C | + 150 C | 960 W | Polar2 HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 69 A | 49 mOhms | 20 V | 2.5 V | 180 nC | - 55 C | + 150 C | 500 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 34 A | 240 mOhms | 20 V | - 55 C | + 150 C | 560 W | Enhancement | HyperFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-3PFP-3 | N-Channel | 1 Channel | 650 V | 48 A | 65 mOhms | 30 V | 5 V | 76 nC | - 55 C | + 150 C | 70 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 600 V | 26 A | 270 mOhms | 30 V | - 55 C | + 150 C | 460 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 55 V | 64 A | 13 mOhms | - 55 C | + 175 C | 130 W | Enhancement | Tube | ||||||||
Mfr: IXFR24N90P TTI: IXFR24N90P IXYS Availability: 0In StockMOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 900 V | 13 A | 460 mOhms | 30 V | 58 nC | - 55 C | + 150 C | 230 W | HiPerFET | Tube | ||||||
Mfr: IXFL210N30P3 TTI: IXFL210N30P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 108 A | 16 mOhms | 20 V | 2.5 V | 268 nC | - 55 C | + 150 C | 520 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 500 V | 34 A | 180 mOhms | HiPerFET | Tube | ||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 130 A | 9.1 mOhms | HiPerFET | Tube | |||||||||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 300 V | 170 A | 18 mOhms | 20 V | 4.5 V | 258 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 7 A | 550 mOhms | 30 V | 5.5 V | 36 nC | - 55 C | + 150 C | 75 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 170 A | 12 mOhms | 20 V | 4 V | 240 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 8 A | 320 mOhms | 30 V | 3.5 V | 113 nC | - 55 C | + 150 C | 860 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 20 A | 185 mOhms | 30 V | 2.5 V | - 55 C | + 150 C | 290 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 54 A | 33 mOhms | 30 V | 3 V | 152 nC | - 55 C | + 150 C | 330 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 2 kV | 3 A | 8 Ohms | 20 V | 3 V | - 55 C | + 150 C | 520 W | Polar3 | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 102 A | 30 mOhms | 30 V | 3 V | 152 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.5 kV | 4 A | 6 Ohms | 30 V | 2.5 V | 375 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 850 V | 9.5 A | 360 mOhms | 30 V | 3.5 V | 63 nC | - 55 C | + 150 C | 110 W | Enhancement | HiPerFET | Tube |