IXYS - MOSFETs
2,278 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 14 A | 450 mOhms | - 30 V, 30 V | 5.5 V | 36 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 54 A | 59 mOhms | - 20 V, 20 V | 5.2 V | 49 nC | - 55 C | + 150 C | 625 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 200 V | 32 A | 130 mOhms | Tube | |||||||||||||
Mfr: IXFK80N50Q3 TTI: IXFK80N50Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 500V/80A | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 80 A | 65 mOhms | - 30 V, 30 V | 3.5 V | 200 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 500 V | 34 A | 180 mOhms | HiPerFET | Tube | ||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 102 A | 30 mOhms | - 30 V, 30 V | 3 V | 152 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.5 kV | 4 A | 6 Ohms | - 30 V, 30 V | 2.5 V | 375 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 54 A | 33 mOhms | - 30 V, 30 V | 3 V | 152 nC | - 55 C | + 150 C | 330 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 2 kV | 3 A | 8 Ohms | - 20 V, 20 V | 3 V | - 55 C | + 150 C | 520 W | Polar3 | Tube | |||||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 850 V | 9.5 A | 360 mOhms | - 30 V, 30 V | 3.5 V | 63 nC | - 55 C | + 150 C | 110 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-268-3 | N-Channel | 800 V | 14 A | 720 mOhms | 400 W | HiPerFET | Tube | |||||||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 800 V | 24 A | 400 mOhms | - 30 V, 30 V | 5 V | 105 nC | - 55 C | + 150 C | 650 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 110 A | 15 mOhms | - 20 V, 20 V | 2.5 V | 110 nC | - 55 C | + 175 C | 480 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 29 A | 230 mOhms | - 30 V, 30 V | 3.5 V | 350 nC | - 55 C | + 150 C | 520 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 800 mA | 25 Ohms | - 20 V, 20 V | 4.5 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 2.4 A | 7.5 Ohms | - 20 V, 20 V | 2.5 V | 37 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3 A | 4.8 Ohms | - 20 V, 20 V | 4.8 V | 39 nC | - 55 C | + 150 C | 125 W | Enhancement | Polar | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | 1.2 kV | 1 A | 20 Ohms | Tube | ||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 180 A | 11 mOhms | - 20 V, 20 V | - 55 C | + 175 C | 830 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 130 A | 9.1 mOhms | HiPerFET | Tube | |||||||||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 300 V | 170 A | 18 mOhms | - 20 V, 20 V | 4.5 V | 258 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFK40N90P TTI: IXFK40N90P IXYS Availability: 0In StockMOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 900 V | 40 A | 210 mOhms | - 30 V, 30 V | 6.5 V | 230 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | Tube |
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