IXYS - MOSFETs
2,278 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 14 A | 550 mOhms | - 30 V, 30 V | 3.5 V | 30 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | HiPerFET | Tube | ||||||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | HiPerFET | Tube | ||||||||||||||||
0In Stock | Si | SMD/SMT | TO-268-3 | N-Channel | 1 Channel | 500 V | 30 A | 200 mOhms | - 30 V, 30 V | 3 V | 70 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 35 A | 95 mOhms | - 30 V, 30 V | 3 V | 150 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 133 A | 9 mOhms | - 20 V, 20 V | 5 V | 235 nC | - 55 C | + 175 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 200 mOhms | - 30 V, 30 V | 3 V | 102 nC | - 55 C | + 150 C | 208 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 800 V | 16 A | 600 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 20 A | 290 mOhms | - 30 V, 30 V | 5 V | 150 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 32 A | 270 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 14 A | 450 mOhms | - 30 V, 30 V | 5.5 V | 36 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 150 V | 96 A | 24 mOhms | - 20 V, 20 V | 5 V | 110 nC | - 55 C | + 175 C | 480 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 42 A | 84 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 30 A | 200 mOhms | - 20 V, 20 V | 4.5 V | 240 nC | - 55 C | + 150 C | 400 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 600 V | 18 A | 385 mOhms | - 20 V, 20 V | 4 V | 196 nC | - 55 C | + 150 C | 310 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 150 V | 22 A | 120 mOhms | Tube | |||||||||||||
Mfr: IXFX220N17T2 TTI: IXFX220N17T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET Pwr MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 170 V | 220 A | 6.3 mOhms | - 20 V, 20 V | 2.5 V | 500 nC | - 55 C | + 175 C | 1.25 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 250 A | 6.5 mOhms | - 20 V, 20 V | 3 V | 205 nC | - 55 C | + 175 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFR24N100Q3 TTI: IXFR24N100Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/18A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 18 A | 490 mOhms | - 30 V, 30 V | 140 nC | 500 W | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 250 V | 44 A | 75 mOhms | - 20 V, 20 V | 2.5 V | - 55 C | + 150 C | 400 W | Linear L2T | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 250 V | 86 A | 37 mOhms | - 20 V, 20 V | 3 V | - 55 C | + 150 C | 540 W | HiPerFET | Tube | |||||||
0In Stock | Si | HiPerFET | Tube | ||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2 kV | 6 A | 4 Ohms | - 20 V, 20 V | 3 V | 143 nC | - 55 C | + 150 C | 960 W | Enhancement | Polar3 | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 650 V | 60 A | 52 mOhms | - 30 V, 30 V | 3.5 V | 108 nC | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFT32N100XHV TTI: IXFT32N100XHV IXYS Availability: 0In StockMOSFETs 1000V 32A TO-268HV Power MOSFET | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1 kV | 32 A | 220 mOhms | - 30 V, 30 V | 3.5 V | 130 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube |
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