IXYS - MOSFETs
2,278 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 96 A | 24 mOhms | - 20 V, 20 V | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 30 A | 450 mOhms | - 30 V, 30 V | 5 V | 545 nC | - 55 C | + 150 C | 800 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 160 A | 7 mOhms | - 55 C | + 175 C | 430 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 86 A | 29 mOhms | - 30 V, 30 V | 5 V | 90 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 24 A | 400 mOhms | - 20 V, 20 V | 5.5 V | 267 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 10 A | 570 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 166 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 13 A | 420 mOhms | - 30 V, 30 V | 5 V | 105 nC | - 55 C | + 150 C | 208 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 750 mA | 17 Ohms | - 30 V, 30 V | 4.5 V | 7.8 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 3 A | 3.85 Ohms | - 30 V, 30 V | 2.5 V | 67 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | HiPerFET | Tube | ||||||||||||||||
Mfr: IXFX32N100Q3 TTI: IXFX32N100Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/32A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 32 A | 320 mOhms | - 30 V, 30 V | 3.5 V | 195 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 35 A | 90 mOhms | - 20 V, 20 V | 3 V | 60 nC | - 55 C | + 150 C | Enhancement | CoolMOS | Tube | |||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 50 A | 45 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube | ||||||
0In Stock | Si | HiPerFET | Tube | ||||||||||||||||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-3P-3 | P-Channel | 1 Channel | 200 V | 32 A | 130 mOhms | - 15 V, 15 V | 2 V | 185 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 150 V | 76 A | 22 mOhms | - 20 V, 20 V | 2.5 V | 97 nC | - 55 C | + 175 C | 350 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFH44N50Q3 TTI: IXFH44N50Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 500V/44A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 44 A | 140 mOhms | - 30 V, 30 V | 3.5 V | 93 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 500 V | 16 A | 360 mOhms | HiPerFET | Tube | ||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 75 V | 230 A | 4.2 mOhms | - 20 V, 20 V | 2 V | 178 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 20 A | 390 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 9 A | 1.04 Ohms | - 30 V, 30 V | - 55 C | + 150 C | 230 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 15 A | 430 mOhms | - 30 V, 30 V | 6.5 V | 197 nC | - 55 C | + 150 C | 290 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 76 A | 42 mOhms | - 20 V, 20 V | 5 V | 92 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 102 A | 18 mOhms | - 20 V, 20 V | 2.5 V | 87 nC | - 55 C | + 175 C | 455 W | Enhancement | HiPerFET | Tube |
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