IXYS - MOSFETs
2,278 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: IXFH24N90P TTI: IXFH24N90P IXYS Availability: 0In StockMOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 900 V | 24 A | 420 mOhms | - 30 V, 30 V | 6.5 V | 130 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | - 20 V, 20 V | 4.5 V | 335 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
Mfr: IXFX360N15T2 TTI: IXFX360N15T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET | 0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 150 V | 360 A | 4 mOhms | - 20 V, 20 V | 2.5 V | 715 nC | - 55 C | + 175 C | 1.67 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 200 V | 32 A | 130 mOhms | - 15 V, 15 V | 4 V | 180 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 80 A | 32 mOhms | - 20 V, 20 V | 4 V | 180 nC | - 55 C | + 150 C | 520 W | Enhancement | Linear | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 200 A | 11 mOhms | - 20 V, 20 V | 4.5 V | 540 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 96 A | 24 mOhms | - 20 V, 20 V | 5 V | 145 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTX22N100L TTI: IXTX22N100L IXYS Availability: 0In StockMOSFETs LINEAR PWR MOSFET N-CHAN 1000V 22A | 0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 1 kV | 22 A | 600 mOhms | - 30 V, 30 V | 5.5 V | 270 nC | - 55 C | + 150 C | 700 W | Enhancement | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 110 A | 15 mOhms | - 20 V, 20 V | 5 V | 110 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 800 V | 44 A | 190 mOhms | - 30 V, 30 V | 3 V | 198 nC | - 55 C | + 150 C | 1.2 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 4 A | 3 Ohms | - 20 V, 20 V | 4.5 V | 39 nC | - 55 C | + 150 C | 150 W | Enhancement | HyperFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 170 A | 9 mOhms | - 20 V, 20 V | 5 V | 198 nC | - 55 C | + 175 C | 714 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 72 A | 19 mOhms | - 20 V, 20 V | 2.5 V | 82 nC | - 55 C | + 150 C | 36 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | - 30 V, 30 V | 3 V | 36 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 500 V | 10 A | 1 Ohms | - 20 V, 20 V | 2 V | 50 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 94 A | 10.6 mOhms | - 20 V, 20 V | 4.5 V | 77 nC | - 55 C | + 175 C | 360 W | Enhancement | Tube | |||||
Mfr: IXTP120N20X4 TTI: IXTP120N20X4 IXYS Availability: 0In StockMOSFETs 200V, 120A, Ultra junction X4, TO-220 package, MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 120 A | 9.5 mOhms | - 20 V, 20 V | 2.5 V | 108 nC | - 55 C | + 175 C | 417 W | Enhancement | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 20 A | 300 mOhms | - 30 V, 30 V | 5 V | 36 nC | - 55 C | + 150 C | 380 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | ISOPLUS-i4-PAK-3 | N-Channel | 1 Channel | 4.5 kV | 200 mA | 625 Ohms | - 20 V, 20 V | 4 V | 10.6 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 4.5 kV | 200 mA | 625 Ohms | - 20 V, 20 V | 4 V | 10.6 nC | - 55 C | + 150 C | 113 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 80 A | 38 mOhms | - 30 V, 30 V | 2.7 V | 137 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 600 V | 100 mA | 44 Ohms | - 15 V, 15 V | 3.1 V | - 55 C | + 125 C | 1.8 W | Depletion | Reel | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 85 V | 44 A | 22 mOhms | - 30 V, 30 V | 4.5 V | 33 nC | - 55 C | + 175 C | 130 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 12 A | 500 mOhms | - 30 V, 30 V | 5.5 V | 29 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 45 A | 72 mOhms | - 30 V, 30 V | 3 V | 197 nC | - 55 C | + 150 C | 360 W | Enhancement | HiPerFET | Tube |
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