IXYS - MOSFETs
2,278 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 8 A | 450 mOhms | - 30 V, 30 V | 3 V | 11 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 86 A | 13 mOhms | - 20 V, 20 V | 4.5 V | 70 nC | - 55 C | + 175 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 700 V | 2 A | 850 mOhms | - 30 V, 30 V | 2.5 V | 11.8 nC | - 55 C | + 150 C | 80 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 30 A | 60 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 150 A | 8.3 mOhms | - 20 V, 20 V | 4.5 V | 254 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 36 A | 45 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 36 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 150 A | 8.3 mOhms | - 20 V, 20 V | 4.5 V | 177 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | P-Channel | 1 Channel | 200 V | 120 A | 30 mOhms | - 15 V, 15 V | 4.5 V | 740 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | TrenchP | Tube | ||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | Clare | Reel | ||||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 600 mA | 32 Ohms | - 20 V, 20 V | 2.5 V | 13.3 nC | - 55 C | + 150 C | 42 W | Enhancement | Polar | Reel | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 34 A | 100 mOhms | - 20 V, 20 V | 5.2 V | 29 nC | - 55 C | + 150 C | 446 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 14 A | 550 mOhms | - 30 V, 30 V | 3.5 V | 30 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | Clare | Reel | ||||||||||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 52 A | 125 mOhms | - 30 V, 30 V | 3.5 V | 245 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 10 A | 1.5 Ohms | - 20 V, 20 V | 4.5 V | 200 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 12 A | 300 mOhms | - 30 V, 30 V | 2.5 V | 17.7 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.7 kV | 1 A | 16 Ohms | - 20 V, 20 V | 2.5 V | 47 nC | - 55 C | + 150 C | 290 W | Depletion | Tube | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 4 A | 850 mOhms | - 30 V, 30 V | 3 V | 8.3 nC | - 55 C | + 150 C | 80 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 650 V | 8 A | 500 mOhms | - 30 V, 30 V | 3 V | 12 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 26 A | 270 mOhms | - 30 V, 30 V | 5 V | 72 nC | - 55 C | + 150 C | 460 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 600 V | 16 A | 720 mOhms | - 20 V, 20 V | 2 V | 92 nC | - 55 C | + 150 C | 460 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 140 A | 20 mOhms | - 20 V, 20 V | 5 V | 185 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | Polar | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 75 V | 170 A | 5.4 mOhms | - 20 V, 20 V | 4 V | 109 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 4 A | 3.3 Ohms | - 20 V, 20 V | 6 V | 26 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 52 A | 120 mOhms | - 30 V, 30 V | 4.5 V | 113 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube |
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- + $7.00 Per Reel