IXYS - MOSFETs
2,278 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 250 V | 240 A | 5 mOhms | - 20 V, 20 V | 2.5 V | 345 nC | - 55 C | + 150 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 72 A | 20 mOhms | - 20 V, 20 V | 2.5 V | 55 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | - 20 V, 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 1.2 kV | 30 A | 350 mOhms | - 30 V, 30 V | 6.5 V | 310 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 16 A | 400 mOhms | - 30 V, 30 V | 3 V | 36 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 36 A | 170 mOhms | - 30 V, 30 V | 5 V | 85 nC | - 55 C | + 150 C | 540 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 52 A | 50 mOhms | - 20 V, 20 V | 4 V | 60 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 100 A | 7 mOhms | - 20 V, 20 V | 2 V | 25.5 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 230 A | 7.5 mOhms | - 20 V, 20 V | 5 V | 358 nC | - 55 C | + 175 C | 1.67 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 7 A | 1.9 Ohms | - 30 V, 30 V | 6 V | 47 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 75 V | 70 A | 12 mOhms | - 20 V, 20 V | 2 V | 46 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | P-Channel | 1 Channel | 150 V | 44 A | 65 mOhms | Tube | ||||||||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1.2 kV | 200 mA | 75 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 33 W | Tube | ||||||||
Mfr: IXFX78N50P3 TTI: IXFX78N50P3 IXYS Availability: 0In StockMOSFETs 500V 78A 0.068Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 78 A | 68 mOhms | - 30 V, 30 V | 5 V | 147 nC | - 55 C | + 150 C | 1.13 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXFH80N25X3 TTI: IXFH80N25X3 IXYS Availability: 0In StockMOSFETs 250V/80A Ultra Junct ion X3-Class MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 80 A | 16 mOhms | - 20 V, 20 V | 2.5 V | 83 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFX300N20X3 TTI: IXFX300N20X3 IXYS Availability: 0In StockMOSFETs N-Ch 200V Enh FET 200Vdgr 300A 4mOhm | 0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 200 V | 300 A | 4 mOhms | - 20 V, 20 V | 2.5 V | 375 nC | - 55 C | + 150 C | 1.25 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | ISOPLUS-i5-PAK-3 | N-Channel | 1 Channel | 4.7 kV | 2 A | 20 Ohms | - 20 V, 20 V | 3.5 V | 180 nC | - 55 C | + 150 C | 220 W | Enhancement | ISOPLUS i5-PAC | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 90 A | 12.8 mOhms | - 20 V, 20 V | 2.5 V | 78 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 210 A | 5.5 mOhms | - 20 V, 20 V | 2.5 V | 375 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 15 A | 760 mOhms | - 30 V, 30 V | 6.5 V | 97 nC | - 55 C | + 150 C | 543 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 32 A | 320 mOhms | - 30 V, 30 V | 6.5 V | 225 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 40 mOhms | - 20 V, 20 V | 3 V | 150 nC | - 55 C | + 150 C | Enhancement | CoolMOS | Tube | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 40 V | 120 A | 6.1 mOhms | - 20 V, 20 V | 2 V | - 55 C | + 175 C | 200 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 250 V | 90 A | 33 mOhms | - 20 V, 20 V | 4.5 V | 640 nC | - 55 C | + 150 C | 960 W | Enhancement | Linear L2 | Tube | ||||
Mfr: IXFK32N100Q3 TTI: IXFK32N100Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/32A | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 32 A | 320 mOhms | - 30 V, 30 V | 6.5 V | 195 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube |
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