IXYS - MOSFETs
2,272 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 170 A | 11 mOhms | 20 V | 5 V | 265 nC | - 55 C | + 175 C | 1.15 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFH42N60P3 TTI: IXFH42N60P3 IXYS Availability: 0In StockMOSFETs 600V 42A 0.185Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 42 A | 185 mOhms | 30 V | 5 V | 78 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFH160N15T2 TTI: IXFH160N15T2 IXYS Availability: 0In StockMOSFETs Trench T2 HiperFET Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 160 A | 9 mOhms | 20 V | 4.5 V | 253 nC | - 55 C | + 175 C | 880 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 40 V | 160 A | 5 mOhms | 20 V | 4 V | 79 nC | - 55 C | + 175 C | 250 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 16 A | 360 mOhms | 30 V | 3 V | 29 nC | - 55 C | + 150 C | 330 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 16 A | 360 mOhms | 30 V | 3 V | 29 nC | - 55 C | + 150 C | 330 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 120 V | 80 A | 17 mOhms | 20 V | 2.5 V | 80 nC | - 55 C | + 175 C | 325 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 210 A | 7.5 mOhms | 15 V | 4.5 V | 740 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | TrenchP | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 3 kV | 1 A | 50 Ohms | 20 V | 2 V | 30.6 nC | - 55 C | + 150 C | 195 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | Clare | Reel | ||||||||||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 52 A | 125 mOhms | 30 V | 3.5 V | 245 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 22 A | 270 mOhms | 30 V | 5.5 V | 50 nC | - 55 C | + 150 C | 350 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 26 A | 230 mOhms | 30 V | 5.5 V | 65 nC | - 55 C | + 150 C | 400 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 36 A | 170 mOhms | 30 V | 5 V | 85 nC | - 55 C | + 150 C | 540 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 32 A | 320 mOhms | 30 V | 6.5 V | 225 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 4 A | 3.3 Ohms | 20 V | 6 V | 26 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 170 A | 14 mOhms | 20 V | 5 V | 185 nC | - 55 C | + 175 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 2.4 A | 7.5 Ohms | 20 V | 4.5 V | 37 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 96 A | 29 mOhms | 30 V | - 55 C | + 150 C | 625 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 86 A | 29 mOhms | 30 V | 5 V | 90 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 18 A | 400 mOhms | 30 V | 3 V | 50 nC | - 55 C | + 150 C | 360 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 64 A | 96 mOhms | 30 V | 5 V | 200 nC | - 55 C | + 150 C | 1.04 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 7 A | 1.4 Ohms | 30 V | 3 V | 32 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 10 A | 1.1 Ohms | 30 V | 3 V | 40 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | 20 V | 2.5 V | 17.8 nC | - 55 C | + 150 C | 63 W | Enhancement | Tube |