IXYS - MOSFETs
2,278 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: IXFA230N075T2-7 TTI: IXFA230N075T2-7 IXYS Availability: 0In StockMOSFETs TrenchT2 HiperFETs Power MOSFET | 0In Stock | Si | SMD/SMT | TO-263AA-3 | N-Channel | 1 Channel | 75 V | 230 A | 4.2 mOhms | - 20 V, 20 V | 2 V | 178 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 200 V | 24 A | 150 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 700 V | 2 A | 850 mOhms | - 30 V, 30 V | 2.5 V | 11.8 nC | - 55 C | + 150 C | 80 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 300 V | 210 A | 5.5 mOhms | - 20 V, 20 V | 2.5 V | 375 nC | - 55 C | + 150 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 75 A | 21 mOhms | - 20 V, 20 V | 5.5 V | 74 nC | - 55 C | + 175 C | 360 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 22 A | 350 mOhms | - 30 V, 30 V | 3 V | 62 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 30 A | 60 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P | N-Channel | 1 Channel | 250 V | 120 A | 12 mOhms | - 20 V, 20 V | 2.5 V | 122 nC | - 55 C | + 150 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 300 V | 26 A | 66 mOhms | - 20 V, 20 V | 2.5 V | 22 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 8 A | 450 mOhms | - 30 V, 30 V | 3 V | 11 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 120 V | 140 A | 10 mOhms | - 20 V, 20 V | 2.5 V | 174 nC | - 55 C | + 175 C | 577 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 700 V | 4 A | 850 mOhms | - 30 V, 30 V | 2.5 V | - 55 C | + 150 C | 30 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IXFX520N075T2 TTI: IXFX520N075T2 IXYS Availability: 0In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 75V 520A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 75 V | 520 A | 2.2 mOhms | - 20 V, 20 V | 5 V | 545 nC | - 55 C | + 175 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXFT70N20Q3 TTI: IXFT70N20Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 200V/70A | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 70 A | 40 mOhms | - 30 V, 30 V | 3.5 V | 67 nC | - 55 C | + 150 C | 690 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 7 A | 1.9 Ohms | - 30 V, 30 V | - 55 C | + 150 C | 300 W | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 20 A | 520 mOhms | - 30 V, 30 V | 5 V | 86 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 50 A | 60 mOhms | - 20 V, 20 V | 5 V | 70 nC | - 55 C | + 175 C | 360 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 250 V | 42 A | 84 mOhms | - 20 V, 20 V | 5.5 V | 70 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 82 A | 35 mOhms | - 20 V, 20 V | 5 V | 142 nC | - 55 C | + 150 C | 500 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 44 A | 140 mOhms | - 30 V, 30 V | 5 V | 98 nC | - 55 C | + 150 C | 650 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 6 A | 1.9 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 180 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.2 kV | 16 A | 950 mOhms | - 30 V, 30 V | 6.5 V | 120 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 800 mA | 20 Ohms | - 20 V, 20 V | 4 V | 11.3 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 108 A | 13 mOhms | - 20 V, 20 V | 4 V | 240 nC | - 55 C | + 150 C | 312 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 130 A | 8.5 mOhms | - 30 V, 30 V | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube |
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