IXYS - MOSFETs
2,272 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: IXFH50N30Q3 TTI: IXFH50N30Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 300V/50A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 50 A | 80 mOhms | 30 V | 3.5 V | 65 nC | - 55 C | + 150 C | 690 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXTP60N20X4 TTI: IXTP60N20X4 IXYS Availability: 0In StockMOSFETs 200V, 60A current capacity, Ultra junction X4, TO-220 package, MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 60 A | 21 mOhms | 20 V | 4.5 V | 11 nC | - 55 C | + 175 C | 250 W | Enhancement | X4-Class | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 200 V | 90 A | 32 mOhms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 52 A | 50 mOhms | 20 V | 4 V | 60 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 100 A | 7 mOhms | 20 V | 2 V | 25.5 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1.2 kV | 200 mA | 75 Ohms | 20 V | - 55 C | + 150 C | 33 W | Tube | ||||||||
Mfr: IXFK64N60Q3 TTI: IXFK64N60Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 600V/64A | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 64 A | 95 mOhms | 30 V | 190 nC | 1.25 kW | HiPerFET | Tube | |||||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | Clare | Reel | ||||||||||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 52 A | 125 mOhms | 30 V | 3.5 V | 245 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 22 A | 270 mOhms | 30 V | 5.5 V | 50 nC | - 55 C | + 150 C | 350 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 26 A | 230 mOhms | 30 V | 5.5 V | 65 nC | - 55 C | + 150 C | 400 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 36 A | 170 mOhms | 30 V | 5 V | 85 nC | - 55 C | + 150 C | 540 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 32 A | 320 mOhms | 30 V | 6.5 V | 225 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 4 A | 3.3 Ohms | 20 V | 6 V | 26 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 170 A | 14 mOhms | 20 V | 5 V | 185 nC | - 55 C | + 175 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 2.4 A | 7.5 Ohms | 20 V | 4.5 V | 37 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 96 A | 29 mOhms | 30 V | - 55 C | + 150 C | 625 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 86 A | 29 mOhms | 30 V | 5 V | 90 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 18 A | 400 mOhms | 30 V | 3 V | 50 nC | - 55 C | + 150 C | 360 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 64 A | 96 mOhms | 30 V | 5 V | 200 nC | - 55 C | + 150 C | 1.04 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 7 A | 1.4 Ohms | 30 V | 3 V | 32 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 10 A | 1.1 Ohms | 30 V | 3 V | 40 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | 20 V | 2.5 V | 17.8 nC | - 55 C | + 150 C | 63 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 40 V | 100 A | 7 mOhms | 20 V | 2 V | 25.5 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 55 V | 110 A | 6.6 mOhms | 20 V | 2 V | 57 nC | - 55 C | + 175 C | 180 W | Enhancement | HiPerFET | Tube |