IXYS - MOSFETs
2,277 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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60In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 600 V | 10 A | 1 Ohms | - 20 V, 20 V | 5 V | 135 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
300In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 150 V | 44 A | 65 mOhms | - 15 V, 15 V | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||||
Mfr: IXFK140N30P TTI: IXFK140N30P IXYS Availability: 400In Stock600 On Order Expected 20-Jan-27 MOSFETs 140 Amps 300V 0.024 Ohms Rds | 400In Stock600 On Order Expected 20-Jan-27 | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 140 A | 24 mOhms | - 20 V, 20 V | 3 V | 185 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXTA120P065T TTI: IXTA120P065T IXYS Availability: 100In Stock600 On Order Expected 22-Oct-26 MOSFETs -120 Amps -65V 0.01 Rds | 100In Stock600 On Order Expected 22-Oct-26 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | - 15 V, 15 V | 2 V | 185 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | |||
210In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 230 A | 7.5 mOhms | - 20 V, 20 V | 3 V | 358 nC | - 55 C | + 175 C | 1.67 kW | Enhancement | HiPerFET | Tube | ||||
300In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 100 V | 90 A | 25 mOhms | - 20 V, 20 V | 4 V | 120 nC | - 55 C | + 150 C | 462 W | Enhancement | Tube | |||||
Mfr: IXTP76P10T TTI: IXTP76P10T IXYS Availability: 250In Stock300 On Order Expected 21-Jan-27 MOSFETs TO220 100V 76A P-CH TRENCH | 250In Stock300 On Order Expected 21-Jan-27 | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 76 A | 24 mOhms | - 15 V, 15 V | 2 V | 197 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | ||||
450In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 75 V | 80 A | 24 mOhms | - 20 V, 20 V | 2.5 V | 103 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | |||||
Mfr: IXFA6N120P TTI: IXFA6N120P IXYS Availability: 150In StockMOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A | 150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.75 Ohms | - 30 V, 30 V | 5 V | 92 nC | - 55 C | + 150 C | 250 W | Enhancement | HiPerFET | Tube | |||
100In Stock | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 600 V | 32 A | 350 mOhms | - 20 V, 20 V | 4 V | 196 nC | - 55 C | + 150 C | 890 W | Enhancement | PolarP | Tube | ||||
Mfr: IXTH02N250 TTI: IXTH02N250 IXYS Availability: 150In StockMOSFETs High Voltage Power MOSFET; 2500V, 0.2A | 150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2.5 kV | 200 mA | 450 Ohms | - 20 V, 20 V | 2.5 V | 7.4 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | ||||
270In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 120 A | 16 mOhms | - 20 V, 20 V | 3 V | 150 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||
50In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 76 A | 25 mOhms | - 15 V, 15 V | 2 V | 197 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | ||||
250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 300 mOhms | - 30 V, 30 V | 2.5 V | 17.7 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | ||||
60In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | - 15 V, 15 V | 4 V | 58 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | ||||
300In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.2 kV | 12 A | 2 Ohms | - 30 V, 30 V | 4.5 V | 106 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
120In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 500 V | 40 A | 230 mOhms | - 20 V, 20 V | 4 V | 205 nC | - 55 C | + 150 C | 890 W | Enhancement | PolarP | Tube | ||||
300In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 16 A | 80 mOhms | - 20 V, 20 V | 4.5 V | 208 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | |||||
90In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 3 A | 7.3 Ohms | - 30 V, 30 V | 2.5 V | 38.6 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: IXFX64N50P TTI: IXFX64N50P IXYS Availability: 90In Stock300 On Order Expected 05-Jan-27 MOSFETs 64.0 Amps 500 V 0.09 Ohm Rds | 90In Stock300 On Order Expected 05-Jan-27 | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 500 V | 64 A | 85 mOhms | - 30 V, 30 V | 3 V | 150 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | |||
60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 6 A | 3.5 Ohms | - 20 V, 20 V | 5 V | 67 nC | - 55 C | + 150 C | 540 W | Enhancement | Tube | |||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 10 A | 1.1 Ohms | - 30 V, 30 V | 5.5 V | 40 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
210In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | - 20 V, 20 V | 2.5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube | |||||
Mfr: IXFH30N50Q3 TTI: IXFH30N50Q3 IXYS Availability: 150In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 500V/30A | 150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 30 A | 200 mOhms | - 30 V, 30 V | 3.5 V | 62 nC | - 55 C | + 150 C | 690 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXTH24N65X2 TTI: IXTH24N65X2 IXYS Availability: 1,710In Stock450 On Order Expected 20-Jan-27 MOSFETs TO247 650V 24A N-CH X2CLASS | 1,710In Stock450 On Order Expected 20-Jan-27 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | - 30 V, 30 V | 3 V | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube |