IXYS - MOSFETs
2,272 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 6 A | 550 mOhms | 20 V | 4.5 V | 96 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | |||||
500In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | 15 V | 2 V | 185 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | ||||
60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 230 A | 7.5 mOhms | 20 V | 3 V | 358 nC | - 55 C | + 175 C | 1.67 kW | Enhancement | HiPerFET | Tube | ||||
570In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | PolarHT | Tube | ||||
Mfr: IXTP76P10T TTI: IXTP76P10T IXYS Availability: 250In Stock100 On Order Expected 18-Nov-26 MOSFETs TO220 100V 76A P-CH TRENCH | 250In Stock100 On Order Expected 18-Nov-26 | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 76 A | 24 mOhms | 15 V | 2 V | 197 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | ||||
650In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 200 W | Enhancement | Tube | |||||
Mfr: IXFK140N30P TTI: IXFK140N30P IXYS Availability: 400In Stock100 On Order Expected 18-Nov-26 MOSFETs 140 Amps 300V 0.024 Ohms Rds | 400In Stock100 On Order Expected 18-Nov-26 | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 140 A | 24 mOhms | 20 V | 3 V | 185 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | |||
390In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 600 V | 10 A | 1 Ohms | 20 V | 5 V | 135 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 10 A | 1.1 Ohms | 30 V | 5.5 V | 40 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
90In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 3 A | 7.3 Ohms | 30 V | 2.5 V | 38.6 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
60In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 500 V | 40 A | 230 mOhms | 20 V | 4 V | 205 nC | - 55 C | + 150 C | 890 W | Enhancement | PolarP | Tube | ||||
210In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | 20 V | 2.5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube | |||||
Mfr: IXTT16N50D2 TTI: IXTT16N50D2 IXYS Availability: 450In StockMOSFETs D2 Depletion Mode Power MOSFETs | 450In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 16 A | 300 mOhms | 20 V | 2 V | 199 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | ||||
300In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.2 kV | 12 A | 2 Ohms | 30 V | 4.5 V | 106 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
300In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 48 A | 100 mOhms | 20 V | - 55 C | + 150 C | 500 W | Enhancement | HyperFET | Tube | ||||||
240In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 76 A | 25 mOhms | 15 V | 4 V | 197 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | ||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 56 A | 27 mOhms | 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 36 A | 45 mOhms | 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | ||||
180In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 2 A | 15 Ohms | 30 V | 6 V | 72 nC | - 55 C | + 150 C | 290 W | Enhancement | Linear | Tube | ||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 6 A | 2.2 Ohms | 20 V | 2.5 V | 95 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | |||||
300In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 150 V | 120 A | 16 mOhms | 20 V | 5 V | 150 nC | - 55 C | + 175 C | 600 W | Enhancement | PolarHT | Tube | ||||
60In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 140 A | 11 mOhms | 20 V | 5 V | 155 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 52 A | 73 mOhms | 20 V | 5 V | 110 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTH260N055T2 TTI: IXTH260N055T2 IXYS Availability: 30In StockMOSFETs TRENCHT2 PWR MOSFET 55V 260A | 30In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 55 V | 260 A | 3.3 mOhms | 20 V | 2 V | 140 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||
300In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 100 V | 90 A | 25 mOhms | 20 V | 4 V | 120 nC | - 55 C | + 150 C | 462 W | Enhancement | Tube |