IXYS - IGBTs
1,044 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: IXYH24N90C3D1 TTI: IXYH24N90C3D1 IXYS Availability: 0In StockIGBTs 900V 24A 2.7V XPT IGBTs GenX3 w/ Diode | 0In Stock | Si | TO-247AD-3 | Through Hole | Single | 900 V | 3 V | - 20 V, 20 V | 44 A | 200 W | - 55 C | + 150 C | Planar | Tube | |||
0In Stock | Si | ISOPLUS i4-PAC-3 | Through Hole | Single | 3 kV | 2.7 V | - 25 V, 25 V | 86 A | 357 W | - 55 C | + 150 C | Very High Voltage | Tube | ||||
0In Stock | Si | TO-263HV-3 | SMD/SMT | Single | 3 kV | 2.2 V | - 20 V, 20 V | 38 A | 200 W | - 55 C | + 150 C | Very High Voltage | Tube | ||||
0In Stock | Si | TO-264-3 | Through Hole | Single | 900 V | 2.7 V | - 20 V, 20 V | 310 A | 1.63 kW | - 55 C | + 175 C | Planar | Tube | ||||
0In Stock | Si | - 20 V, 20 V | Planar | Tube | |||||||||||||
0In Stock | Si | D3PAK-3 (TO-268-3) | SMD/SMT | Single | 3 kV | 3.2 V | - 20 V, 20 V | 30 A | 160 W | - 55 C | + 150 C | Very High Voltage | Tube | ||||
0In Stock | Si | D3PAK-3 (TO-268-3) | SMD/SMT | Single | 1.7 kV | 2.7 V | - 20 V, 20 V | 32 A | 190 W | - 55 C | + 150 C | IXGT16N170 | Tube | ||||
0In Stock | Si | TO-247AD-3 | Through Hole | Single | 900 V | - 20 V, 20 V | - 55 C | + 150 C | IXGH50N90 | Tube | |||||||
0In Stock | Si | Through Hole | Single | 1.2 kV | 3 V | - 20 V, 20 V | 200 A | 830 W | - 55 C | + 150 C | IXGK120N120 | Tube | |||||
Mfr: IXGX50N120C3H1 TTI: IXGX50N120C3H1 IXYS Availability: 0In StockIGBTs High Frequency Range 40khz C-IGBT w/Diode | 0In Stock | Si | TO-247-PLUS-3 | Through Hole | Single | 1.2 kV | 2.6 V | 20 V | 95 A | - 55 C | + 150 C | IXGX50N120 | Tube | ||||
0In Stock | Si | TO-247-3 | Through Hole | IXGX82N120 | Tube | ||||||||||||
Mfr: IXGR55N120A3H1 TTI: IXGR55N120A3H1 IXYS Availability: 0In StockIGBTs High Frequency Range 40khz C-IGBT w/Diode | 0In Stock | Si | TO-247AD-3 | Through Hole | Single | 1.2 kV | 2.2 V | 20 V | 70 A | - 55 C | + 150 C | IXGR55N120 | Tube | ||||
0In Stock | Si | - 20 V, 20 V | IXXN200N60 | Tube | |||||||||||||
0In Stock | Si | TO-220-3 | Through Hole | Single | 900 V | 3 V | - 20 V, 20 V | 20 A | 125 W | - 55 C | + 175 C | IXYP8N90 | Tube | ||||
0In Stock | Si | - 20 V, 20 V | IXXN200N60 | Tube | |||||||||||||
0In Stock | Si | D3PAK-3 (TO-268-3) | SMD/SMT | Single | 1.7 kV | 5.2 V | - 20 V, 20 V | - 55 C | + 150 C | Tube | |||||||
0In Stock | Si | TO-247-PLUS-3 | Through Hole | Single | 1.2 kV | 1.85 V | - 20 V, 20 V | 240 A | 830 W | - 55 C | + 150 C | IXGX120N120 | Tube | ||||
0In Stock | Si | TO-247-3 | Through Hole | Single | 1.2 kV | 2.5 V | - 20 V, 20 V | 120 A | 680 W | - 55 C | + 175 C | Tube | |||||
0In Stock | Si | TO-220-3 | Through Hole | Single | 1 kV | 1.9 V | - 20 V, 20 V | 85 A | 375 W | - 55 C | + 175 C | Tube | |||||
0In Stock | Si | TO-247-3 | Through Hole | Single | 650 V | 1.9 V | - 20 V, 20 V | 340 A | 1.2 kW | - 55 C | + 175 C | Trench | Tube | ||||
0In Stock | Tube | ||||||||||||||||
0In Stock | Si | TO-268-3 | SMD/SMT | Single | 1.7 kV | 3.3 V | - 20 V, 20 V | 75 A | 350 W | - 55 C | + 150 C | Reel | |||||
0In Stock | Si | TO-247-3 | Through Hole | Single | 3 kV | 2.8 V | - 20 V, 20 V | 80 A | 400 W | - 55 C | + 150 C | Tube | |||||
0In Stock | Si | TO-247HV-3 | Through Hole | Single | 3 kV | 2.8 V | - 20 V, 20 V | 34 A | 180 W | - 55 C | + 150 C | Tube | |||||
0In Stock | Si | TO-247-3 | Through Hole | Single | 650 V | 1.7 V | - 20 V, 20 V | 480 A | 1.63 kW | - 55 C | + 175 C | Trench | Tube |
