Bourns - Bipolar Transistors - BJT
411 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: TSDF1205-GS08 TTI: Not Assigned Bourns Availability: Not Available OnlineBipolar Transistors - BJT | Not Available Online | Si | NPN | Single | 12 mA | 4 V | 9 V | 2 V | 40 mW | 12 GHz | - 65 C | + 150 C | ||||||||
Not Available Online | Si | NPN, PNP | Dual | 150 mA | 50 V | 60 V | 7 V | 150 mW | 180 MHz | - 55 C | + 150 C | |||||||||
Not Available Online | Si | PNP | Single | 4 A | 12 V | 15 V | 5 V | 1 W | 115 MHz | - 55 C | + 200 C | |||||||||
Not Available Online | Si | PNP | Single | 6 A | 100 V | 100 V | 5 V | 2 W | 3 MHz | - 65 C | + 150 C | |||||||||
Not Available Online | Si | NPN | Single | 600 mA | 40 V | 75 V | 6 V | 1.3 W | 270 MHz | - 65 C | + 150 C | |||||||||
Not Available Online | Si | NPN, PNP | Quad | 2.5 A | 20 V | 20 V | 5 V | 2 W | 140 MHz | - 55 C | + 150 C | |||||||||
Not Available Online | Si | NPN | Single | 1 A | 80 V | 100 V | 5 V | 1.5 W | 130 MHz | - 65 C | + 150 C | |||||||||
Not Available Online | Si | NPN | Single | 600 mA | 40 V | 75 V | 6 V | 200 mW | 300 MHz | - 55 C | + 150 C | |||||||||
Not Available Online | Si | PNP | Single | 600 mA | 60 V | 60 V | 5 V | 625 mW | 200 MHz | - 65 C | + 150 C | |||||||||
Not Available Online | Si | PNP | Single | 800 mA | 40 V | 60 V | 5 V | 625 mW | - 55 C | + 150 C | ||||||||||
Not Available Online | Si | PNP | Single | 800 mA | 40 V | 60 V | 5 V | 625 mW | - 55 C | + 150 C | ||||||||||
Not Available Online | Si | NPN | Single | 500 mA | 300 V | 300 V | 6 V | 1 W | 50 MHz | - 55 C | + 150 C | |||||||||
Not Available Online | Si | NPN | Single | 400 mA | 4.5 V | 1.5 V | 120 mW | 42 GHz | - 40 C | + 85 C | ||||||||||
Not Available Online | Si | NPN | Single | 3 A | 400 V | 700 V | 9 V | 2.8 W | - 65 C | + 150 C | ||||||||||
Not Available Online | Si | PNP | Single | 3 A | 100 V | 100 V | 5 V | 2 W | 3 MHz | - 65 C | + 150 C | |||||||||
Mfr: TSDF1205W-GS08 TTI: Not Assigned Bourns Availability: Not Available OnlineBipolar Transistors - BJT | Not Available Online | Si | NPN | Single | 12 mA | 4 V | 9 V | 2 V | 40 mW | 12 GHz | - 65 C | + 150 C | ||||||||
Not Available Online | Si | NPN | Single | 150 mA | 50 V | 60 V | 6 V | 150 mW | 180 MHz | + 150 C | ||||||||||
Not Available Online | Si | NPN | Dual | 50 mA | 11 V | 20 V | 3 V | 150 mW | 3.2 GHz | + 150 C | ||||||||||
Not Available Online | Si | NPN, PNP | Quad | 1 A | 70 V | 70 V | 5 V | 2 W | 150 MHz | - 55 C | + 150 C | |||||||||
Not Available Online | Si | NPN | Single | 3 A | 120 V | 175 V | 5 V | 1 W | 130 MHz | - 55 C | + 200 C | |||||||||
Not Available Online | Si | NPN | Single | 500 mA | 35 V | 35 V | 300 mW | 150 MHz | ||||||||||||
Not Available Online | Si | NPN | Single | 500 mA | 15 V | 40 V | 5 V | 300 mW | 500 MHz | - 55 C | + 175 C | |||||||||
Not Available Online | Si | NPN | Single | 500 mA | 15 V | 30 V | 3 V | 300 mW | 600 MHz | - 55 C | + 175 C | |||||||||
Not Available Online | Si | PNP | Reel | |||||||||||||||||
Not Available Online | Si | Through Hole | TO-220-3 | NPN | Single | 2 A | 80 V | 5 V | 30 W | - 65 C | + 150 C |
