Littelfuse IXYS Silicon Carbide (SiC) Power MOSFETs are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. These N-Channel MOSFETS come with a 1200V maximum drain-source voltage. The continuous drain current for these devices ranges from 47A to 90A (at TC=25°C). These power MOSFETs come with a static drain-source on resistance from 34mΩ to 52mΩ. The total gate charge for these can range from 100nC to 161nC. These devices are ideal for use in solar inverters, high voltage DC/DC converters, motor drives, switch-mode power supplies, UPS, battery chargers, and induction heating.
IXYS Silicon Carbide (SiC) Power MOSFETs
Features
- High speed switching with low capacitances
- High blocking voltage with low RDS(on)
- Easy to parallel and simple to drive
- Resistant to latch-up
- Real Kelvin source connection
Applications
- Solar inverters
- High voltage DC/DC converters
- Motor drives
- Switch-mode power supplies
- UPS
- Battery chargers
- Induction heating