Part | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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TTI: SCT3060ARC14 Mfr: SCT3060ARC14 ROHM Semiconductor Availability: 240 MOSFET 650V, 39A, 60MO, SIC FET | 240 | SiC | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 39 A | 60 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | - 55 C | + 175 C | 165 W | Enhancement | Tube | SCT3060AR | ||||
TTI: SCT3060ALGC11 Mfr: SCT3060ALGC11 ROHM Semiconductor Availability: On Order MOSFET N-Ch 650V SiC 39A 60mOhm TrenchMOS | On Order | SiC | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 39 A | 60 mOhms | - 4 V, + 22 V | 2.7 V | 58 nC | - 55 C | + 175 C | 165 W | Enhancement | Tube | SCT3060AL | ||||
TTI: SCT3060ALHRC11 Mfr: SCT3060ALHRC11 ROHM Semiconductor Availability: 0 MOSFET 650V 39A 165W SIC 60mOhm TO-247N | 0 | SiC | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 39 A | 60 mOhms | - 4 V, + 22 V | 2.7 V | 58 nC | - 55 C | + 175 C | 165 W | Enhancement | AEC-Q101 | Tube | SCT3060ALHR | |||
0 | SiC | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 650 V | 38 A | 78 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | + 175 C | 159 W | Enhancement | Reel | SCT3060AW7 | ||||||
0 | SiC | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 39 A | 60 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | + 175 C | 165 W | Enhancement | Tube | |||||||
0 | SiC | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 39 A | 60 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | + 175 C | 165 W | Enhancement | Tube |